®
BCP52-16
LOW POWER PNP TRANSISTOR
Ordering Code
BCP52-16
s
Marking
BCP5216
s
s
s
SILICON EPITAXIAL PLANAR PNP MEDIUM
VOLTAGE TRANSISTOR
SOT-223 PLASTIC PACKAGE FOR
SURFACE MOUNTING CIRCUITS
TAPE AND REEL PACKING
THE NPN COMPLEMENTARY TYPE IS
BCP55-16
2
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CER
I
C
I
B
I
BM
P
tot
T
stg
T
j
V
CEO
V
EBO
I
CM
Parameter
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Collector-Emitter Voltage (R
BE
= 1KΩ)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
amb
= 25 C
Storage Temperature
Max. Operating Junction Temperature
o
APPLICATIONS
s
MEDIUM VOLTAGE LOAD SWITCH
TRANSISTORS
s
OUTPUT STAGE FOR AUDIO AMPLIFIERS
CIRCUITS
s
AUTOMOTIVE POST-VOLTAGE
REGULATION
b
O
so
te
le
SOT-223
ro
P
1
uc
d
2
s)
t(
3
INTERNAL SCHEMATIC DIAGRAM
P
te
le
od
r
s)
t(
uc
Value
-60
-60
-60
-5
-1
-1.5
-0.1
-0.2
1.4
-65 to 150
150
Unit
V
V
V
V
A
A
A
A
W
o
o
Collector Peak Current (t
p
< 5 ms)
C
C
September 2003
1/4
BCP52-16
THERMAL DATA
R
thj-amb
•
Thermal Resistance Junction-Ambient
2
Max
89.3
o
C/W
•
Device mounted on a PCB area of 1 cm
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
V
(BR)CBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Collector-Base
Breakdown Voltage
(I
E
= 0)
Test Conditions
V
CB
= -30 V
V
CB
= -30 V
I
C
= -100
µA
T
j
= 125
o
C
-60
Min.
Typ.
Max.
-100
-10
Unit
nA
µA
V
V
(BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)CER
Collector-Emitter
Breakdown Voltage
(R
BE
= 1 KΩ)
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter On
Voltage
I
C
= -20 mA
-60
I
C
= -100
µA
-60
V
(BR)EBO
I
E
= -10
µA
V
CE(sat)
∗
V
BE(on)
∗
h
FE
∗
I
C
= -500 mA
I
C
= -500 mA
I
C
= -5 mA
I
C
= -150 mA
I
C
= -500 mA
I
B
= -50 mA
V
CE
= -2 V
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
DC Current Gain
V
CE
= -2 V
V
CE
= -2 V
V
CE
= -2 V
f
T
Transition Frequency
I
C
= -10 mA V
CE
= -5 V
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
1.5 %
b
O
so
te
le
-5
ro
P
uc
d
-1
s)
t(
V
V
V
V
P
te
le
40
100
25
od
r
50
s)
t(
uc
-0.5
V
250
MHz
f = 20 MHz
2/4
BCP52-16
SOT-223 MECHANICAL DATA
mm
MIN.
A
B
B1
c
D
e
e1
E
H
V
3.30
6.70
0.60
2.90
0.24
6.30
0.70
3.00
0.26
6.50
2.30
4.60
3.50
7.00
3.70
7.30
10
o
TYP.
MAX.
1.80
0.80
3.10
0.32
6.70
0.024
0.114
0.009
0.248
0.027
0.118
0.010
0.256
MIN.
inch
TYP.
MAX.
0.071
0.031
DIM.
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
A1
0.02
b
O
so
0.130
0.264
te
le
ro
P
0.090
0.181
uc
d
s)
t(
0.122
0.013
0.264
0.146
0.138
P
te
le
0.276
od
r
s)
t(
uc
0.287
10
o
P008B
3/4
BCP52-16
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
b
O
so
te
le
ro
P
uc
d
s)
t(
P
te
le
od
r
s)
t(
uc
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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