IS62WV10248BLL
1M x 8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 55ns, 70ns
• CMOS low power operation:
36 mW (typical) operating
12 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply:
2.5V--3.6V V
DD
(IS62WV10248BLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Industrial temperature available
• Lead-free available
ISSI
MARCH 2006
®
DESCRIPTION
The
ISSI
IS62WV10248BLL is a high-speed, 8M bit static
RAMs organized as 1M words by 8 bits. It is fabricated using
ISSI
's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields high-performance and low power
consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected), the device assumes a standby mode at which
the power dissipation can be reduced down with CMOS input
levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE)
controls both writing and reading of the memory.
The IS62WV10248BLL is packaged in the JEDEC standard
48-pin mini BGA (7.2mm x 8.7mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A19
DECODER
1M x 8
MEMORY ARRAY
V
DD
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CS2
CS1
OE
WE
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
CONTROL
CIRCUIT
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
03/17/06
1
IS62WV10248BLL
ISSI
CS1
H
X
L
L
L
CS2
X
L
H
H
H
OE
X
X
H
L
X
I/O Operation
High-Z
High-Z
High-Z
D
OUT
D
IN
V
DD
Current
I
SB
1
, I
SB
2
I
SB
1
, I
SB
2
I
CC
I
CC
I
CC
®
TRUTH TABLE
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
WE
X
X
H
H
L
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
DD
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
V
DD
Related to GND
Storage Temperature
Power Dissipation
Value
–0.2 to V
DD
+0.3
–0.2 to +3.8
–65 to +150
1.0
Unit
V
V
°C
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
OPERATING RANGE (V
DD
)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
IS62WV10248BLL
2.5V - 3.6V
2.5V - 3.6V
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL(1)
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
Test Conditions
I
OH
= -1 mA
I
OL
= 2.1 mA
V
DD
2.5-3.6V
2.5-3.6V
2.5-3.6V
2.5-3.6V
Min.
2.2
—
2.2
–0.2
–1
–1
Max.
—
0.4
V
DD
+ 0.3
0.6
1
1
Unit
V
V
V
V
µA
µA
Notes:
1. V
IL
(min.) = –1.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
03/17/06
3
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