April 1996
NDP6060L / NDB6060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage applications such as
automotive, DC/DC converters, PWM motor controls,
and other battery powered circuits where fast switching,
low in-line power loss, and resistance to transients are
needed.
Features
48A, 60V. R
DS(ON)
= 0.025
Ω
@ V
GS
= 5V.
Low drive requirements allowing operation directly from logic
drivers. V
GS(TH)
< 2.0V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
DGR
V
GSS
I
D
Parameter
Drain-Source Voltage
T
C
= 25°C unless otherwise noted
NDP6060L
60
60
± 16
± 25
48
144
100
0.67
-65 to 175
275
NDB6060L
Units
V
V
V
Drain-Gate Voltage (R
GS
< 1 M
Ω
)
Gate-Source Voltage - Continuous
- Nonrepetitive (t
P
< 50 µs)
Drain Current
- Continuous
- Pulsed
A
P
D
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
W
W/°C
°C
°C
T
J
,T
STG
T
L
Operating and Storage Temperature
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
© 1997 Fairchild Semiconductor Corporation
NDP6060L Rev. D / NDB6060L Rev. E
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
I
AR
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Single Pulse Drain-Source Avalanche
Energy
V
DD
= 25 V, I
D
= 48 A
200
48
mJ
A
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 60 V, V
GS
= 0 V
T
J
= 125°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 16 V, V
DS
= 0 V
V
GS
= -16 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125°C
Static Drain-Source On-Resistance
V
GS
= 5 V, I
D
= 24 A
T
J
= 125°C
V
GS
= 10 V, I
D
= 24 A
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
V
GS
= 5 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 24 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
48
10
1
0.65
60
250
1
100
-100
V
µA
mA
nA
nA
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
2
1.5
0.025
0.04
0.02
A
S
V
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1630
460
150
2000
800
400
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 1)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 48 V,
I
D
= 48 A, V
GS
= 5 V
V
DD
= 30 V, I
D
= 48 A,
V
GS
= 5 V, R
GEN
= 15
Ω
,
R
GS
= 15
Ω
15
320
49
161
36
8.2
21
30
500
100
300
60
nS
nS
nS
nS
nC
nC
nC
NDP6060L Rev. D / NDB6060L Rev. E
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
I
SM
V
SD
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 24 A
(Note 1)
T
J
= 125°C
t
rr
I
rr
Reverse Recovery Time
Reverse Recovery Current
V
GS
= 0 V, I
F
= 48 A,
dI
F
/dt = 100 A/µs
35
2
75
3.6
48
144
1.3
1.2
140
8
ns
A
A
A
V
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.5
62.5
°C/W
°C/W
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP6060L Rev. D / NDB6060L Rev. E
Typical Electrical Characteristics
100
2
V
GS
= 10V
I
D
, DRAIN-SOURCE CURRENT (A)
80
6.0
4.5
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
5.0
GS
= 3.0V
3.5
4.0
1 .5
60
4.5
5.0
5.5
1
4.0
3.5
3.0
2.5
40
6.0
10
20
0
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
4
5
0 .5
0
20
I
D
40
60
80
100
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
2
2
I
D
= 24A
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 5.0V
DRAIN-SOURCE ON-RESISTANCE
1.8
1.6
1.4
1.75
V
GS
= 5V
R
DS(on)
, NORMALIZED
TJ = 125°C
R
DS(ON)
, NORMALIZED
1.5
1.25
25°C
1.2
1
0.8
0.6
1
0.75
-55°C
0.5
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
0
20
40
60
I
D
, DRAIN CURRENT (A)
80
100
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
60
GATE-SOURCE THRESHOLD VOLTAGE
1.3
V
DS
= 10V
50
I
D
, DRAIN CURRENT (A)
T = -55°C
J
25°C
125°C
V
GS(th)
, NORMALIZED
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50
V
DS
= V
GS
I
D
= 250µA
40
30
20
10
0
1
2
3
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
5
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
NDP6060L Rev. D / NDB6060L Rev. E
Typical Electrical Characteristics
(continued)
1.15
DRAIN-SOURCE BREAKDOWN VOLTAGE
80
I
D
= 250µA
I
S
, REVERSE DRAIN CURRENT (A)
1.1
10
TJ = 125°C
25°C
BV
DSS
, NORMALIZED
1
1.05
-55°C
0.1
1
0.01
0.95
0.001
V
GS
= 0V
0.0001
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.8
0.9
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
.
4000
3000
V
GS
, GATE-SOURCE VOLTAGE (V)
2000
CAPACITANCE (pF)
10
I
D
= 48A
Ciss
8
V
DS
= 12V
48V
24V
1000
6
500
300
200
Coss
4
f = 1 MHz
V
GS
= 0 V
Crss
2
100
1
2
V
DS
0
3
5
10
20
30
50
0
20
, DRAIN TO SOURCE VOLTAGE (V)
40
Q
g
, GATE CHARGE (nC)
60
80
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics
.
V
DD
t
d(on)
V
IN
D
t
on
t
r
90%
t
o f f
t
d(off)
90%
t
f
R
L
V
OUT
DUT
V
GEN
V
O U T
10%
10%
INVERTED
R
GEN
R
GS
G
90%
S
V
IN
10%
50%
50%
PULSE W IDTH
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms.
NDP6060L Rev. D / NDB6060L Rev. E
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