Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
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salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
BC856; BC857; BC858
PNP general purpose transistors
Product data sheet
Supersedes data of 2003 Apr 09
2004 Jan 16
NXP Semiconductors
Product data sheet
PNP general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 65 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC846, BC847 and BC848.
MARKING
TYPE NUMBER
BC856
BC856A
BC856B
BC857
BC857A
BC857B
BC857C
BC858B
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
ORDERING INFORMATION
TYPE
NUMBER
BC856
BC857
BC858
PACKAGE
NAME
−
−
−
DESCRIPTION
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
MARKING CODE
(1)
3D*
3A*
3B*
3H*
3E*
3F*
3G*
3K*
Top view
handbook, halfpage
BC856; BC857; BC858
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
SOT23
SOT23
2004 Jan 16
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V
CBO
BC856
BC857
BC858
V
CEO
collector-emitter voltage
BC856
BC857
BC858
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
PARAMETER
collector-base voltage
CONDITIONS
open emitter
BC856; BC857; BC858
MIN.
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
−80
−50
−30
−65
−45
−30
−5
−100
−200
−200
250
+150
150
+150
V
V
V
V
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
TYPICAL
500
UNIT
K/W
2004 Jan 16
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector-base cut-off current
CONDITIONS
V
CB
=
−30
V; I
E
= 0
V
CB
=
−30
V; I
E
= 0;
T
j
= 150
°C
I
EBO
h
FE
emitter-base cut-off current
DC current gain
BC856
BC857
BC856A; BC857A
BC856B; BC857B; BC858B
BC857C
V
CEsat
collector-emitter saturation voltage
V
EB
=
−5
V; I
C
= 0
I
C
=
−2
mA; V
CE
=
−5
V
BC856; BC857; BC858
MIN.
−
−
−
125
125
125
220
420
TYP.
−1
−
−
−
−
−
−
−
−75
−250
−700
−850
−650
−
4.5
−
2
MAX.
−15
−4
−100
475
800
250
475
800
−300
−650
−
−
−750
−820
−
−
10
UNIT
nA
μA
nA
I
C
=
−10
mA; I
B
=
−0.5
mA
−
I
C
=
−100
mA; I
B
=
−5
mA;
−
note 1
mV
mV
mV
mV
mV
mV
pF
MHz
dB
V
BEsat
base-emitter saturation voltage
I
C
=
−10
mA; I
B
=
−0.5
mA
−
I
C
=
−100
mA; I
B
=
−5
mA;
−
note 1
V
BE
C
c
f
T
F
base-emitter voltage
collector capacitance
transition frequency
noise figure
I
C
=
−2
mA; V
CE
=
−5
V
I
C
=
−10
mA; V
CE
=
−5
V
V
CB
=
−10
V; I
E
= I
e
= 0;
f = 1 MHz
V
CE
=
−5
V; I
C
=
−10
mA;
f = 100 MHz
I
C
=
−200 μA;
V
CE
=
−5
V;
R
S
= 2 kΩ; f = 1 kHz;
B = 200 Hz
−600
−
−
100
−
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
2004 Jan 16
4
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