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Semiconductor
MR27V801D
1,048,576-Word x 8-Bit One Time PROM
DESCRIPTION
1A
The MR27V801D is a 8Mbit electrically Programmable Read-Only Memory organized as 1,048,576
word x 8bit. The MR27V801D operates on a single +3V-3.3V power supply and is TTL compatible.
Since the MR27V801D operates asynchronously , external clocks are not required , making this
device easy-to-use. The MR27V801D is suitable as large-capacity fixed memory for microcomputers
and data terminals. It is manufactured using a CMOS double silicon gate technology and is offered
in 32-pin DIP, 32-pin SOP or 32-pin TSOP packages.
FEATURES
• 1,048,576 word x 8bit
• Single +3V-3.3V power supply
• Access time
100ns access time (Vcc=+3V)
80ns access time (Vcc=+3.3V)
• Input / Output TTL compatible
• Three-state output
• Packages
32-pin plastic DIP (DIP32-P-600-2.54)
(Product name : MR27V801DRA)
32-pin plastic SOP (SOP32-P-525-1.27-K)
(Product name : MR27V801DMA)
32-pin plastic TSOP (TSOP I 32-P-814-0.50-K) (Product name : MR27V801DTA)
November 1999
1/10
MR27V801D
PIN CONFIGURATION (TOP VIEW)
A19 1
A16 2
A15 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
D0 13
D1 14
D2 15
V
SS
16
32-pin DIP
32 V
CC
31 A18
30 A17
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE/Vpp
23 A10
22 CE
21 D7
20 D6
19 D5
18 D4
17 D3
A19 1
A16 2
A15 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
D0 13
D1 14
D2 15
V
SS
16
32-pin SOP
32 V
CC
31 A18
30 A17
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE/Vpp
23 A10
22 CE
21 D7
20 D6
19 D5
18 D4
17 D3
A5
A7
A15
A19
A18
A14
A8
A11
1
V
CC
A6
A12
A13
A9
A4
A16
A17
16 15 14 13 12 11 10 9 8 7 6 5 4 3 2
32-pin TSOP
17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
D3
D5
D7
A3
A1
D0
D2
A10
V
SS
D4
D6
A2
D1
CE OE/Vpp
A0
PIN NAMES
A0 - A19
D0 - D7
CE
OE/V
PP
V
CC
V
SS
FUNCTIONS
Address input
Data output
Chip enable
Output enable /
Program power supply voltage
Power supply voltage
GND
2/10
MR27V801D
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating temperature under bias
Storage temperature
Input voltage
Output voltage
Power supply voltage
Program power supply voltage
Power dissipation per package
Symbol
Topr
T
stg
V
I
V
O
V
CC
V
PP
P
D
-
relative to V
SS
Condition
-
Value
0 to 70
-55 to 125
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
-0.5 to 5
-0.5 to 11.5
1.0
Unit
°C
°C
V
V
V
V
W
RECOMMENDED OPERATING CONDITIONS
(Ta=0 to 70
°C)
Parameter
V
CC
power supply voltage
V
PP
power supply voltage
Input "H" level
Input "L" level
Voltage is relative to Vss
* : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS.
** : -1.5V (Min.) when pulse width of undershoot is less than 10nS.
Symbol
V
CC
OE/V
PP
V
IH
V
IL
Condition
Min.
2.7
-0.5
2.2
-0.5**
Typ.
-
-
-
-
Max.
3.6
V
CC
+0.5
V
CC
+0.5*
0.6
Unit
V
V
V
V
V
CC
=2.7V - 3.6V
4/10
MR27V801D
ELECTRICAL CHARACTERISTICS (Read operation)
DC Characteristics 1
(V
CC
=3V
±
0.3V, Ta=0 to 70
°C
)
Parameter
Input leakage current
Output leakage current
V
CC
power supply current
(Standby)
V
CC
power supply current
(Read)
V
PP
power supply current
Input "H" level
Input "L" level
Output "H" level
Output "L" level
Voltage is relative to Vss
* : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS.
** : -1.5V (Min.) when pulse width of undershoot is less than 10nS.
Symbol
I
LI
I
LO
I
CCSC
I
CCST
I
CCA
I
PP
V
IH
V
IL
V
OH
V
OL
Condition
V
I
=0 to Vcc
V
O
=0 to Vcc
CE=V
CC
CE=V
IH
CE=V
IL,
OE/V
PP
=V
IH
tc=100ns
OE/V
PP
=V
CC
-
-
I
OH
=-400µA
I
OL
=2.1mA
Min.
-
-
-
-
-
-
2.2
-0.5**
2.4
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
10
10
50
1
25
10
V
CC
+0.5*
0.6
-
0.4
Unit
µA
µA
µA
mA
mA
µA
V
V
V
V
DC Characteristics 2
(V
CC
=3.3V
±
0.3V, Ta=0 to 70
°C
)
Parameter
Input leakage current
Output leakage current
V
CC
power supply current
(Standby)
V
CC
power supply current
(Read)
V
PP
power supply current
Input "H" level
Input "L" level
Output "H" level
Output "L" level
Voltage is relative to Vss
* : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS.
** : -1.5V (Min.) when pulse width of undershoot is less than 10nS.
Symbol
I
LI
I
LO
I
CCSC
I
CCST
I
CCA
I
PP
V
IH
V
IL
V
OH
V
OL
Condition
V
I
=0 to Vcc
V
O
=0 to Vcc
CE=V
CC
CE=V
IH
CE=V
IL,
OE/V
PP
=V
IH
tc=80ns
OE/V
PP
=V
CC
-
-
I
OH
=-400µA
I
OL
=2.1mA
Min.
-
-
-
-
-
-
2.2
-0.5**
2.4
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
10
10
50
1
30
10
V
CC
+0.5*
0.6
-
0.4
Unit
µA
µA
µA
mA
mA
µA
V
V
V
V
5/10
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