Infrared Emitters IR, 950nm Array
| 参数名称 | 属性值 |
| 产品种类 Product Category | Phototransistors |
| 制造商 Manufacturer | Osram Opto Semiconductor |
| RoHS | Details |
| 产品 Product | Phototransistors |
| 封装 / 箱体 Package / Case | Miniature Array |
| 安装风格 Mounting Style | Through Hole |
| Peak Wavelength | 850 nm |
| Maximum On-State Collector Current | 50 mA |
| Collector- Emitter Voltage VCEO Max | 35 V |
| Dark Current | 1 nA |
| Rise Time | 6 us |
| Fall Time | 6 us |
| Pd-功率耗散 Pd - Power Dissipation | 90 mW |
| 最小工作温度 Minimum Operating Temperature | - 40 C |
| 最大工作温度 Maximum Operating Temperature | + 80 C |
| Collector-Emitter Breakdown Voltage | 35 V |
| Collector-Emitter Saturation Voltage | 150 mW |
| Half Intensity Angle Degrees | 18 deg |
| 高度 Height | 3.4 mm |
| 长度 Length | 7.4 mm |
| Lens Color/Style | Transparent |
| Light Current | 320 uA |
| 工厂包装数量 Factory Pack Quantity | 125 |
| 类型 Type | Silicon NPN Phototransistor Arrays |
| Wavelength | 850 nm |
| 宽度 Width | 1.8 mm |
| BPX-85 | BPX-89 | BPX-80 | BPX-87 | BPX-88 | BPX-83 | |
|---|---|---|---|---|---|---|
| 描述 | Infrared Emitters IR, 950nm Array | Pluggable Terminal Blocks 3 Pos 3.5mm pitch Plug 28-16 AWG Screw | EEPROM 1024-Bit 1-Wire EEPROM | Phototransistors PHOTOTRANSISTOR | Infrared Emitters - High Power Infrared 940nm OSLON Black | Infrared Emitters IR, 950nm Array |
| 产品种类 Product Category |
Phototransistors | Phototransistors | Phototransistors | Phototransistors | Phototransistors | Phototransistors |
| 制造商 Manufacturer |
Osram Opto Semiconductor | Osram Opto Semiconductor | Osram Opto Semiconductor | Osram Opto Semiconductor | Osram Opto Semiconductor | Osram Opto Semiconductor |
| RoHS | Details | Details | Details | Details | Details | Details |
| 产品 Product |
Phototransistors | Phototransistors | Phototransistors | Phototransistors | Phototransistors | Phototransistors |
| 封装 / 箱体 Package / Case |
Miniature Array | Miniature Array | Miniature Array | Miniature Array | Miniature Array | Miniature Array |
| 安装风格 Mounting Style |
Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Peak Wavelength | 850 nm | 850 nm | 850 nm | 850 nm | 850 nm | 850 nm |
| Maximum On-State Collector Current | 50 mA | 50 mA | 50 mA | 50 mA | 50 mA | 50 mA |
| Collector- Emitter Voltage VCEO Max | 35 V | 35 V | 35 V | 35 V | 35 V | 35 V |
| Dark Current | 1 nA | 1 nA | 1 nA | 1 nA | 1 nA | 1 nA |
| Rise Time | 6 us | 6 us | 6 us | 6 us | 6 us | 6 us |
| Fall Time | 6 us | 6 us | 6 us | 6 us | 6 us | 6 us |
| Pd-功率耗散 Pd - Power Dissipation |
90 mW | 90 mW | 90 mW | 90 mW | 90 mW | 90 mW |
| 最小工作温度 Minimum Operating Temperature |
- 40 C | - 40 C | - 40 C | - 40 C | - 40 C | - 40 C |
| 最大工作温度 Maximum Operating Temperature |
+ 80 C | + 80 C | + 80 C | + 80 C | + 80 C | + 80 C |
| Collector-Emitter Breakdown Voltage | 35 V | 35 V | 35 V | 35 V | 35 V | 35 V |
| Collector-Emitter Saturation Voltage | 150 mW | 150 mW | 150 mW | 150 mW | 150 mW | 150 mW |
| Half Intensity Angle Degrees | 18 deg | 18 deg | 18 deg | 18 deg | 18 deg | 18 deg |
| 高度 Height |
3.4 mm | 3.4 mm | 3.4 mm | 3.4 mm | 3.4 mm | 3.4 mm |
| 长度 Length |
7.4 mm | 7.4 mm | 7.4 mm | 7.4 mm | 7.4 mm | 7.4 mm |
| Lens Color/Style | Transparent | Transparent | Transparent | Transparent | Transparent | Transparent |
| Light Current | 320 uA | 320 uA | 320 uA | 320 uA | 320 uA | 320 uA |
| 工厂包装数量 Factory Pack Quantity |
125 | 100 | 100 | 100 | 100 | 250 |
| 类型 Type |
Silicon NPN Phototransistor Arrays | Silicon NPN Phototransistor Arrays | Silicon NPN Phototransistor Arrays | Silicon NPN Phototransistor Arrays | Silicon NPN Phototransistor Arrays | Silicon NPN Phototransistor Arrays |
| Wavelength | 850 nm | 850 nm | 850 nm | 850 nm | 850 nm | 850 nm |
| 宽度 Width |
1.8 mm | 1.8 mm | 1.8 mm | 1.8 mm | 1.8 mm | 1.8 mm |
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