MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output
April 2013
MOC211M, MOC212M, MOC213M
Small Ouline Optocouplers Transistor Output
Features
■
UL Recognized (File #E90700, Volume 2)
■
VDE Recognized (File #136616) (add option ‘V’ for
■
■
■
■
Description
These devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon
phototransistor detector, in a surface mountable, small
outline, plastic package. They are ideally suited for high
density applications, and eliminate the need for through-
the-board mounting.
VDE approval, e.g., MOC211VM)
Convenient Plastic SOIC-8 Surface Mountable
Package Style
Standard SOIC-8 Footprint, with 0.050" Lead Spacing
High Input-Output Isolation of 2500 V
AC(rms)
Guaranteed
Minimum BV
CEO
of 30V Guaranteed
Applications
■
General Purpose Switching Circuits
■
Interfacing and Coupling Systems of Different
Potentials and Impedances
■
Regulation Feedback Circuits
■
Monitor and Detection Circuits
Schematic
Package Outline
ANODE
1
8
N/C
CATHODE
2
7
BASE
Figure 2. Package Outline
N/C
3
6
COLLECTOR
N/C
4
5
EMITTER
Figure 1. Schematic
©2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.2
www.fairchildsemi.com
MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
T
A
= 25°C unless otherwise specified.
Symbol
Emitter
I
F
I
F
(pk)
V
R
P
D
Detector
V
CEO
V
ECO
V
CBO
I
C
P
D
Total Device
V
ISO
P
D
T
A
T
stg
T
L
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector-Base Voltage
Rating
Forward Current – Continuous
Forward Current – Peak (PW = 100 µs, 120 pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
Value
60
1.0
6.0
90
0.8
30
7.0
70
150
150
1.76
2500
250
2.94
-40 to +100
-40 to +150
260
Unit
mA
A
V
mW
mW/°C
V
V
V
mA
mW
mW/°C
Vac(rms)
mW
mW/°C
°C
°C
°C
Collector Current-Continuous
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
Input-Output Isolation Voltage
(f = 60 Hz, t = 1 minute)
(1)(2)(3)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
(1/16
"
from case, 10 second duration)
Notes:
1. Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 minute is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 second.
©2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.2
www.fairchildsemi.com
2
MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Symbol
Emitter
V
F
I
R
C
IN
Detector
I
CEO1
I
CEO2
BV
CEO
BV
ECO
C
CE
Coupled
CTR
Parameter
Input Forward Voltage
Reverse Leakage Current
Input Capacitance
Collector-Emitter Dark Current
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
Collector-Emitter Capacitance
Collector-Output Current
(4)
MOC211M
MOC212M
MOC213M
Isolation Surge Voltage
(1)(2)(3)
Isolation Resistance
(2)
Test Conditions
I
F
= 10 mA
V
R
= 6.0 V
Min.
Typ.*
1.15
0.001
18
Max.
1.5
100
Unit
V
µA
pF
V
CE
= 10 V, T
A
= 25°C
V
CE
= 10 V, T
A
= 100°C
I
C
= 100 µA
I
E
= 100 µA
f = 1.0 MHz, V
CE
= 0
I
F
= 10 mA, V
CE
= 10 V
20
50
100
f = 60 Hz AC Peak, t = 1 minute
V = 500 V
2500
10
11
30
7.0
1.0
1.0
100
10
7.0
50
nA
µA
V
V
pF
%
V
ISO
R
ISO
Vac(rms)
Ω
0.4
0.2
7.5
5.7
3.2
4.7
V
pF
µs
µs
µs
µs
V
CE (sat)
Collector-Emitter Saturation Voltage I
C
= 2.0 mA, I
F
= 10 mA
Isolation Capacitance
(2)
V = 0 V, f = 1 MHz
C
ISO
t
on
t
off
t
r
t
f
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 12)
I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 12)
I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 12)
I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 12)
*Typical values at T
A
= 25°C
Notes:
1. Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 minute is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 second.
4. Current Transfer Ratio (CTR) = I
C
/ I
F
x 100 %.
©2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.2
www.fairchildsemi.com
3
MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output
Typical Performance Curves
1.8
10
1.7
V
F
– FORWARD VOLTAGE (V)
1.6
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.5
1
V
CE
= 5 V
NORMALIZED TO I
F
= 10 mA
1.4
T
A
= –55°C
1.3
T
A
= 25°C
1.2
0.1
1.1
T
A
= 100°C
1.0
1
10
100
I
F
– LED FORWARD CURRENT (mA)
Figure 3. LED Forward Voltage vs. Forward Current
0.01
0.1
1
10
100
I
F
– LED INPUT CURRENT (mA)
10
Figure 4. Output Curent vs. Input Current
1.6
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.4
1.2
1.0
1
0.8
0.6
0.4
0.2
I
F
= 10 mA
NORMALIZED TO V
CE
= 5 V
0.0
0
1
2
3
4
5
6
7
8
9
10
NORMALIZED TO T
A
= 25°C
0.1
-80
-60
-40
-20
0
20
40
60
80
100
120
T
A
– AMBIENT TEMPERATURE (°C)
V
CE
– COLLECTOR-EMITTER VOLTAGE (V)
Figure 5. Output Current vs. Ambient Temperature
10000
1.0
Figure 6. Output Current vs. Collector-Emitter Voltage
I
CEO
– COLLECTOR -EMITTER DARK CURRENT (nA)
1000
V
CE
= 10 V
0.9
I
F
= 20 m A
0.8
0.7
100
NORMALIZED CTR
0.6
0.5
I
F
= 10 mA
I
F
= 5 mA
0.4
0.3
0.2
0.1
0.0
10
1
V
CE
= 5 V, T
A
= 25°C
Normalized to:
CTR at R
BE
= Open
10
100
1000
0.1
0
20
40
60
80
100
T
A
– AMBIENT TEMPERATURE (°C)
R
BE
– BASE RESISTANCE (kΩ)
Figure 7. Dark Current vs. Ambient Temperature
Figure 8. CTR vs. RBE (Unsaturated)
©2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.2
www.fairchildsemi.com
4
MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output
Typical Performance Curves
(Continued)
1.0
0.9
3.5
4.0
V
CC
= 10 V
I
C
= 2 mA
R
L
= 100
Ω
NORMALIZED TO:
t
on
AT R
BE
= OPEN
0.8
I
F
= 20 mA
3.0
NORMALIZED CTR
0.7
0.6
0.5
I
F
= 5 mA
0.4
0.3
0.2
0.1
0.0
10
V
CE
= 0.3 V, T
A
= 25°C
Normalized to:
CTR at R
BE
= Open
100
1000
0.5
I
F
= 10 mA
NORMALIZED t
on
2.5
2.0
1.5
1.0
0.0
0.01
0.1
1
10
100
R
BE
– BASE RESISTANCE (kΩ)
R
BE
–
BASE RESISTANCE (M
Ω
)
Figure 9. CTR vs. RBE (Saturated)
Figure 10. Normalized ton vs. RBE
1.6
1.4
1.2
V
CC
= 10 V
I
C
= 2 mA
R
L
= 100
Ω
NORMALIZED TO :
t
off
AT R
BE
= OPEN
f
NORMALIZED t
off
f
1.0
0.8
0.6
0.4
0.2
0.0
0.01
0.1
1
10
100
R
BE
– BASE RESISTANCE
(M
Ω
)
Figure 11. Normalized toff vs. RBE
TEST CIRCUIT
V
CC
= 10 V
WAVEFORMS
INPUT PULSE
I
F
INPUT
R
BE
I
C
R
L
10%
90%
t
r
t
on
Adjust I
F
to produce I
C
= 2 mA
t
f
t
off
OUTPUT PULSE
OUTPUT
Figure 12. Switching Time Test Circuit and Waveforms
©2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.2
www.fairchildsemi.com
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