Datasheet> 器件分类 > 分立半导体> 晶体管> NDB408BE

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NDB408BE: 产品描述N-Channel Enhancement Mode Field Effect Transistor; 产品类别分立半导体晶体管; 文件大小53KB，共6页; 制造商Fairchild; 官网地址http://www.fairchildsemi.com/

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NDB408BE概述

N-Channel Enhancement Mode Field Effect Transistor

NDB408BE规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Fairchild
Reach Compliance Code	compli
ECCN代码	EAR99
雪崩能效等级（Eas）	40 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	80 V
最大漏极电流 (Abs) (ID)	11 A
最大漏极电流 (ID)	11 A
最大漏源导通电阻	0.2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-263AB
JESD-30 代码	R-PSSO-G2
JESD-609代码	e0
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
最高工作温度	175 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	50 W
最大脉冲漏极电流 (IDM)	33 A
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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May 1994

NDP408A / NDP408AE / NDP408B / NDP408BE

NDB408A / NDB408AE / NDB408B / NDB408BE

N-Channel Enhancement Mode Field Effect Transistor

General Description

These N-channel enhancement mode power field

effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process has been especially

tailored to minimize on-state resistance, provide

superior switching performance, and withstand high

energy pulses in the avalanche and commutation

modes. These devices are particularly suited for low

voltage applications such as automotive, DC/DC

converters, PWM motor controls, and other battery

powered circuits where fast switching, low in-line

power loss, and resistance to transients are needed.

Features

12 and 11A, 80V. R

DS(ON)

= 0.16 and 0.20Ω.

Critical DC electrical parameters specified at

elevated temperature.

Rugged internal source-drain diode can eliminate

the need for an external Zener diode transient

suppressor.

175°C maximum junction temperature rating.

High density cell design (3 million/in²) for extremely

low R

DS(ON)

TO-220 and TO-263 (D

PAK) package for both

through hole and surface mount applications.

_____________________________________________________________________

Absolute Maximum Ratings

Symbol Parameter

DSS

DGR

GSS

STG

Drain-Source Voltage

Drain-Gate Voltage (R

< 1 MΩ)

Gate-Source Voltage - Continuous

- Nonrepetitive (t

< 50

µs)

Drain Current - Continuous

- Pulsed

Total Power Dissipation @ T

= 25°C

Derate above 25°C

= 25°C unless otherwise noted

NDP408A NDP408AE

NDB408A NDB408AE

±20

±40

0.33

NDP408B NDP408BE

NDB408B NDB408BE

Units

W/°C

°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering

purposes, 1/8" from case for 5 seconds

-65 to 175

275

NDP408.SAM

NDB408BE相似产品对比

	NDB408BE	NDP408BE	NDP408B	NDP408	NDP408AE	NDP408A	NDB408AE	NDB408A	NDB408B
描述	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor	N-Channel Enhancement Mode Field Effect Transistor
是否Rohs认证	不符合	不符合	不符合	-	不符合	不符合	不符合	不符合	不符合
厂商名称	Fairchild	Fairchild	Fairchild	-	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild
Reach Compliance Code	compli	compli	compli	-	compli	compli	compli	compli	compli
ECCN代码	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	-	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	80 V	80 V	-	-	80 V	-	80 V	80 V	80 V
最大漏极电流 (Abs) (ID)	11 A	11 A	-	-	12 A	-	12 A	12 A	11 A
最大漏极电流 (ID)	11 A	11 A	-	-	12 A	-	12 A	12 A	11 A
最大漏源导通电阻	0.2 Ω	0.2 Ω	-	-	0.16 Ω	-	0.16 Ω	0.16 Ω	0.2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	-	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-263AB	TO-220AB	-	-	TO-220AB	-	TO-263AB	TO-263AB	TO-263AB
JESD-30 代码	R-PSSO-G2	R-PSFM-T3	-	-	R-PSFM-T3	-	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609代码	e0	e0	-	-	e0	-	e0	e0	e0
元件数量	1	1	-	-	1	-	1	1	1
端子数量	2	3	-	-	3	-	2	2	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	-	-	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	175 °C	175 °C	-	-	175 °C	-	175 °C	175 °C	175 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	-	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	FLANGE MOUNT	-	-	FLANGE MOUNT	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	-	-	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	50 W	50 W	-	-	50 W	-	50 W	50 W	50 W
最大脉冲漏极电流 (IDM)	33 A	33 A	-	-	36 A	-	36 A	36 A	33 A
认证状态	Not Qualified	Not Qualified	-	-	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	NO	-	-	NO	-	YES	YES	YES
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	-	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	GULL WING	THROUGH-HOLE	-	-	THROUGH-HOLE	-	GULL WING	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	-	-	SINGLE	-	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	-	-	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	-	-	SILICON	-	SILICON	SILICON	SILICON

NDB408BE

NDB408BE概述

NDB408BE规格参数

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