May 1994
NDP408A / NDP408AE / NDP408B / NDP408BE
NDB408A / NDB408AE / NDB408B / NDB408BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
Features
12 and 11A, 80V. R
DS(ON)
= 0.16 and 0.20Ω.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both
through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
V
DSS
V
DGR
V
GSS
I
D
P
D
T
J
,T
STG
T
L
Drain-Source Voltage
Drain-Gate Voltage (R
GS
< 1 MΩ)
Gate-Source Voltage - Continuous
- Nonrepetitive (t
P
< 50
µs)
Drain Current - Continuous
- Pulsed
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
T
C
= 25°C unless otherwise noted
NDP408A NDP408AE
NDB408A NDB408AE
80
80
±20
±40
12
36
50
0.33
NDP408B NDP408BE
NDB408B NDB408BE
Units
V
V
V
V
11
33
A
A
W
W/°C
°C
°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
-65 to 175
275
© 1997 Fairchild Semiconductor Corporation
NDP408.SAM
Electrical Characteristics
(T
Symbol
E
AS
I
AR
Parameter
Single Pulse Drain-Source
Avalanche Energy
C
= 25°C unless otherwise noted)
Conditions
V
DD
= 25 V, I
D
= 12 A
Type
NDP408AE
NDP408BE
NDB408AE
NDB408BE
Min
Typ
Max
40
12
Units
mJ
A
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 80 V,
V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
,
I
D
= 250 µA
V
GS
= 10 V,
I
D
= 6 A
ALL
ALL
T
J
= 125°C
ALL
ALL
ALL
T
J
= 125°C
NDP408A
NDP408AE
NDB408A
T
J
= 125°C NDB408AE
NDP408B
NDP408BE
NDB408B
T
J
= 125°C NDB408BE
NDP408A
NDP408AE
NDB408A
NDB408AE
NDP408B
NDP408BE
NDB408B
NDB408BE
g
FS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 10 V, I
D
= 6 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
ALL
ALL
ALL
ALL
DYNAMIC CHARACTERISTICS
11
2
1.4
2.9
2.3
0.11
0.19
80
250
1
100
-100
4
3.6
0.16
0.32
0.2
0.5
V
µA
mA
nA
nA
V
V
Ω
Ω
Ω
Ω
A
ON CHARACTERISTICS
(Note 2)
V
GS
= 10 V,
I
D
= 5.5 A
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
10
A
3
5.3
380
115
35
500
125
50
S
pF
pF
pF
C
iss
C
oss
C
rss
NDP408.SAM
Electrical Characteristics
(T
Symbol
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
I
S
Parameter
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
C
= 25°C unless otherwise noted)
Conditions
V
DD
= 40 V, I
D
= 12 A,
V
GS
= 10 V, R
GEN
= 24
Ω
Type
ALL
ALL
ALL
ALL
Min
Typ
7.5
48
22
32
12
2.5
6
Max
20
80
40
60
17
Units
nS
nS
nS
nS
nC
nC
nC
SWITCHING CHARACTERISTICS
(Note 2)
V
DS
= 64 V,
I
D
= 12 A, V
GS
= 10V
ALL
ALL
ALL
NDP408A
NDP408AE
NDB408A
NDB408AE
NDP408B
NDP408BE
NDB408B
NDB408BE
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuos Drain-Source Diode Forward Current
12
A
11
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
NDP408A
NDP408AE
NDB408A
NDB408AE
NDP408B
NDP408BE
NDB408B
NDB408BE
36
A
33
A
V
SD
(Note 2)
Drain-Source Diode Forward
Voltage
Reverse Recovery Time
Reverse Recovery Current
V
GS
= 0 V,
I
S
= 6 A
V
GS
= 0 V, I
S
= 12 A,
dI
S
/dt = 100 A/µs
ALL
T
J
= 125°C
ALL
ALL
0.87
0.74
68
4.7
1.3
1.2
100
7
V
V
ns
A
t
rr
I
rr
R
θJC
R
θJA
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
ALL
ALL
3
62.5
°C/W
°C/W
Notes:
1. NDP408A/408B and NDB408A/408B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
NDP408.SAM
Typical Electrical Characteristics
30
2
V
GS
= 20V
I
D
, DRAIN-SOURCE CURRENT (A)
25
12
8.0
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10
V
GS
= 6V
1.8
1.6
1.4
1.2
1
0.8
0.6
7.0
8.0
10
12
20
20
7.0
15
10
6.0
5
5.0
0
0
2
4
6
8
0
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
10
15
20
I
D
, DRAIN CURRENT (A)
25
30
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Gate Voltage and Drain Current.
2.5
2.5
V
DRAIN-SOURCE ON-RESISTANCE
2
V
GS
= 10V
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 6A
TJ = 125°C
2
GS
= 10V
R
DS(ON)
, NORMALIZED
1.5
1.5
1
25°C
1
0.5
-55°C
0
-50
-25
0
25
50
75
100
125
T , JUNCTION TEMPERATURE (°C)
J
150
175
0.5
0
5
10
15
20
I
D
, DRAIN CURRENT (A)
25
30
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Drain Current and Temperature.
10
GATE-SOURCE THRESHOLD VOLTAGE (V)
1.2
V
DS
= 10V
8
I
D
, DRAIN CURRENT (A)
T = -55°C
J
25
125
V
th
, NORMALIZED
V
DS
= V
1.1
GS
I
D
= 250µA
1
6
0.9
4
0.8
2
0.7
0
2
3
V
GS
4
5
6
, GATE TO SOURCE VOLTAGE (V)
7
0.6
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature.
NDP408.SAM
Typical Electrical Characteristics
(continued)
1.15
UDRAIN-SOURCE BREAKDOWN VOLTAGE (V)
30
I
D
= 250µA
1.1
V
GS
= 0V
TJ = 125°C
25°C
-55°C
I
S
, REVERSE DRAIN CURRENT (A)
-25
0
T
J
25
50
75
100
125
, JUNCTION TEMPERATURE (°C)
150
175
10
5
2
1
0.5
BV
DSS
, NORMALIZED
1.05
1
0.1
0.95
0.9
-50
0.01
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 7. Breakdown Voltage
Variation with Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature.
20
V
GS
, GATE-SOURCE VOLTAGE (V)
1000
500
C iss
I
D
= 12A
15
V
DS
= 12V
64
24
CAPACITANCE (pF)
200
100
50
C oss
10
C rss
f = 1 MHz
V
GS
= 0 V
5
10
0.1
0.2
V
0.5
DS
1
2
5
10
20
, DRAIN TO SOURCE VOLTAGE (V)
50
0
0
5
10
15
Q
g
, GATE CHARGE (nC)
20
25
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
V
DD
t
d(on)
t
on
t
r
90%
t
off
t
d(off)
90%
t
f
V
IN
D
R
L
V
OUT
DUT
Output, Vout
10%
10%
90%
V
GS
R
GEN
Inverted
G
Input, Vin
10%
50%
50%
S
Pulse Width
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP408.SAM
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