August 1996
NDP7051 / NDB7051
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
Features
70A, 50V. R
DS(ON)
= 0.013
Ω
@ V
GS
=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
DGR
V
GSS
I
D
Parameter
Drain-Source Voltage
T
C
= 25°C unless otherwise noted
NDP7051
50
50
± 20
± 40
70
210
130
0.87
-65 to 175
275
NDB7051
Units
V
V
V
Drain-Gate Voltage (R
GS
< 1 M
Ω
)
Gate-Source Voltage - Continuous
- Nonrepetitive (t
P
< 50 µs)
Drain Current
- Continuous
- Pulsed
A
P
D
Maximum Power Dissipation @ T
C
= 25°C
Derate above 25°C
W
W/°C
°C
°C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
© 1997 Fairchild Semiconductor Corporation
NDP7051 Rev. D
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
W
DSS
I
AR
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
I
D(on)
g
FS
Parameter
Single Pulse Drain-Source Avalanche
Energy
Maximum Drain-Source Avalanche Current
Conditions
V
DD
= 25 V, I
D
= 70 A
Min
Typ
Max
500
70
Units
mJ
A
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 40 V, V
GS
= 0 V
T
J
= 125°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125°C
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 35 A
T
J
= 125°C
On-State Drain Current
Forward Transconductance
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 35 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
60
30
2
1.4
2.9
2.2
0.011
0.018
50
10
1
100
-100
V
µA
mA
nA
nA
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
4
3.6
0.013
0.023
A
S
V
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1930
870
310
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 1)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 48 V,
I
D
= 70 A, V
GS
= 10 V
V
DD
= 25 V, I
D
= 70 A,
V
GS
= 10 V, R
GEN
= 5
Ω
13
98
36
65
67
11
38
30
200
80
150
100
nS
nS
nS
nS
nC
nC
nC
NDP7051 Rev. D
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
I
rr
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 35 A
(
Note 1)
T
J
= 125°C
Reverse Recovery Time
Reverse Recovery Current
V
GS
= 0 V, I
F
= 70 A, dI
F
/dt = 100 A/µs
40
2
0.9
0.8
105
4.5
70
210
1.3
1.2
150
10
ns
A
A
A
V
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.15
62.5
°C/W
°C/W
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP7051 Rev. D
Typical Electrical Characteristics
100
3
V
GS
=20V
I
D
, DRAIN-SOURCE CURRENT (A)
80
12 10
7.0
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
8.0
V
GS
= 5.0V
2.5
6.0
2
60
6.0
40
7.0
1.5
8.0
1
20
5.0
4.5
10
12
20
0
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
4
0.5
0
20
40
60
I
D
, DRAIN CURRENT (A)
80
100
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
2
2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.5
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.75
I
D
= 35A
V
GS
= 10V
V
GS
=10V
1.75
TJ = 125°C
1.5
1.25
1.25
25°C
1
1
0.75
0.75
-55°C
0.5
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
0.5
0
20
40
60
I , DRAIN CURRENT (A)
D
80
100
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
60
1 .4
V
GS(th)
, NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
V
DS
= 10V
50
I
D
, DRAIN CURRENT (A)
T = -55°C
J
125°C
25°C
V
DS
= V
GS
1 .2
I
D
= 250µA
40
1
30
0 .8
20
0 .6
10
0
2
3
V
GS
4
5
, GATE TO SOURCE VOLTAGE (V)
6
7
0 .4
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
NDP7051 Rev. D
Typical Electrical Characteristics
(continued)
1.15
BV
DSS
, NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
I
D
= 250µA
1.1
100
50
V
GS
= 0V
I
S
, REVERSE DRAIN CURRENT (A)
10
T J = 125°C
25°C
1
1.05
-55°C
1
0.1
0.95
0.01
0.9
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
0.001
0.2
0.3
0.5
1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
2
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
5000
4000
3000
20
I
D
= 70A
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
= 12V
24V
48V
Ciss
CAPACITANCE (pF)
2000
15
Coss
1000
10
500
300
200
0.1
f = 1 MHz
V
GS
= 0V
Crss
5
0
0.2
0.5
1
2
5
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
50
0
20
40
60
80
Q
g
, GATE CHARGE (nC)
100
120
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
V
DD
V
IN
D
t
on
t
off
t
r
90%
R
L
V
OUT
t
d(on)
t
d(off)
90%
t
f
V
GS
R
GEN
V
OUT
G
DUT
10%
10%
INVERTED
90%
S
V
IN
10%
50%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP7051 Rev. D
嵌入式系统
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