December 1996
NDH8301N
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage applications such
as notebook computer power management, and other battery
powered circuits where fast switching, and low in-line power
loss are needed in a very small outline surface mount package.
Features
3 A, 20 V. R
DS(ON)
= 0.06
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 0.075
Ω
@ V
GS
= 2.7 V.
Proprietary SuperSOT
TM
-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
____________________________________________________________________________________________
5
4
3
2
1
6
7
8
Absolute Maximum Ratings
T
A
= 25°C unless otherwise note
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
,T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
Operating and Storage Temperature Range
(Note 1 )
(Note 1)
NDH8301N
20
8
3
15
0.8
-55 to 150
Units
V
V
A
W
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)
156
40
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDH8301N Rev.E
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 16 V, V
GS
= 0 V
T
J
= 55
o
C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125 C
Static Drain-Source On-Resistance
V
GS
= 4.5 V, I
D
= 3 A
T
J
= 125 C
V
GS
= 2.7 V, I
D
= 2.6 A
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
On-State Drain Current
V
GS
= 4.5 V, V
DS
= 5 V
V
GS
= 2.7 V, V
DS
= 5 V
Forward Transconductance
V
DS
= 5 V, I
D
= 3 A
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
415
220
85
pF
pF
pF
15
5
10
S
o
o
20
1
10
100
-100
V
µA
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
0.4
0.3
0.7
0.45
0.047
0.07
0.059
1
0.8
0.06
0.11
0.075
A
V
Ω
SWITCHING CHARACTERISTICS
(Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 10 V,
I
D
= 3 A, V
GS
= 4.5 V
V
DD
= 5 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
Ω
8
25
30
8
10
0.9
3.5
15
45
55
15
15
ns
ns
ns
ns
nC
nC
nC
NDH8301N Rev.E
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
0.67
(Note 2)
Units
A
V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.67 A
0.7
1.2
P
D
(
t
) =
R
θ
J A
t
)
(
T
J
−
T
A
=
R
θ
J C
R
θ
CA
t
)
+
(
T
J
−
T
A
=
I
2
(
t
) ×
R
DS
(
ON
)
D
T
J
Typical R
θ
JA
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
156
o
C/W when mounted on a 0.0025 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDH8301N Rev.E
Typical Electrical Characteristics
15
I
D
, DRAIN-SOURCE CURRENT (A)
2
2.5
R
DS(on)
, NORMALIZED
12
DRAIN-SOURCE ON-RESISTANCE
V
GS
=4.5V
3.0
2.7
1.75
V
GS
= 2.0V
2.0
9
1.5
2.5
1.25
6
2.7
3.0
3.5
4.5
3
1
0
0
0.5
V
DS
0.75
1
1.5
2
2.5
3
0
3
6
9
12
15
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
1.8
R
DS(ON)
, NORMALIZED
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
2
I
D
= 3A
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 4.5V
T = 125°C
J
1.5
V
GS
= 4.5V
1
25°C
0.5
-55°C
-25
0
25
50
75
100
125
150
0
0
3
6
9
12
15
T
J
, JUNCTION TEMPERATURE (°C)
I
D
, DRAIN CURRENT (A)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
V
DS
= 5V
I , DRAIN CURRENT (A)
8
T = -55°C
J
25°C
125°C
V
th
, NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
10
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75
100
125
150
V
DS
= V
GS
I
D
= 250µA
6
4
D
2
0
0
0.5
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
NDH8301N Rev.E
Typical Electrical Characteristics
DRAIN-SOURCE BREAKDOWN VOLTAGE
10
5
1.15
I
D
= 250µA
I , REVERSE DRAIN CURRENT (A)
V
GS
=0V
1
BV
DSS
, NORMALIZED
1.1
TJ = 125°C
0 .1
1.05
25°C
-55°C
1
0 .0 1
0.95
0 .0 0 1
0.9
-50
S
-25
0
25
50
75
100
125
150
0 .0 0 0 1
0
0 .2
0 .4
0.6
0 .8
1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1 .2
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
.
1200
5
, GATE-SOURCE VOLTAGE (V)
800
500
CAPACITANCE (pF)
300
200
I
D
= 3A
4
V
DS
= 5V
10
15V
Ciss
Coss
3
2
100
Crss
f = 1 MHz
V
GS
= 0 V
40
0 .1
V
0 .5
1
3
5
, DRAIN TO SOURCE VOLTAGE (V)
10
20
0 .2
V
DS
GS
1
0
0
2
4
6
8
10
12
Q
g
, GATE CHARGE (nC)
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
V
DD
t
d(on)
t
on
t
r
90%
t
off
t
d(off)
90%
t
f
V
IN
D
R
L
V
OUT
DUT
V
GS
V
OUT
R
GEN
10%
10%
INVERTED
G
90%
S
V
IN
10%
50%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms.
NDH8301N Rev.E
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