DATA SHEET
PHOTO DIODE
NDL5471R Series
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS
φ
120
µ
m InGaAs PIN PHOTO DIODE RECEPTACLE MODULE
DESCRIPTION
The NDL5471R Series is an InGaAs PIN photo diode receptacle module especially designed for a detector of long
wavelength optical fiber communications systems. It covers the wavelength range between 1 000 and 1 600 nm with
high efficiency.
FEATURES
• Small dark current
• High quantum efficiency
• Cut-off frequency
• Detecting area size
• Low operating voltage
I
D
= 0.1 nA
η
= 86 % @
λ
= 1 300 nm
η
= 80 % @
λ
= 1 550 nm
f
C
= 1.5 GHz MIN.
φ
120
µ
m
PACKAGE DIMENSIONS
NDL5471RC
for FC Connector
2– 4 Depth±1.5
2– 2.2
3.5
8.9±0.1
in millimeters
NDL5471RD
for SC Connector
2– 2.3
7.4
9.4±0.1
13.44±0.1
19±0.1
12.8±0.3
18.0±0.1
22.0±0.3
4–C1.0
3.4
4.4
2.0±0.1
12.5
MIN.
6.0±0.1
8.0±0.1
C0.5
M8×0.75
2.0
6.8
PIN CONNECTIONS
Case
4
Cathode 3
2.0
6.8
3
4 1
1
Anode
3
4
1
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10263EJ4V0DS00 (4th edition)
Date Published April 1999 NS CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
12.5
MIN.
6.0±0.1
2.0±0.1
14.2±0.2
8.5
7.92
1995, 1999
NDL5471R Series
ORDERING INFORMATION
Part Number
NDL5471RC
NDL5471RD
Device Type
FC type receptacle module
SC type receptacle module
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C, unless otherwise specified)
Parameter
Reverse Voltage
Forward Current
Reverse Current
Optical Input Power
Operating Case Temperature
Storage Temperature
Symbol
V
R
I
F
I
R
P
in
T
C
T
stg
Ratings
20
10
0.5
8
–40 to +85
–40 to +85
Unit
V
mA
mA
mW
°C
°C
ELECTRO-OPTICAL CHARACTERISTICS (T
C
= 25
°
C)
Parameter
Dark Current
Terminal Capacitance
Quantum Efficiency
Symbol
I
D
C
t
V
R
= 5 V
V
R
= 5 V, f = 1.0 MHz
λ
= 1 300 nm, V
R
= 5 V
λ
= 1 550 nm, V
R
= 5 V
Responsivity
S
λ
= 1 300 nm, V
R
= 5 V
λ
= 1 550 nm, V
R
= 5 V
Cut-off Frequency
f
C
V
R
= 5 V, R
L
= 50
Ω, −3dB
1.5
0.78
75
Conditions
MIN.
TYP.
0.1
1.1
86
80
0.89
1.0
GHz
A/W
MAX.
1.0
1.5
Unit
nA
pF
%
η
2
Data Sheet P10263EJ4V0DS00
NDL5471R Series
TYPICAL CHARACTERISTICS (T
C
= 25 °C, unless otherwise specified)
WAVELENGTH DEPENDENCE
OF QUANTUM EFFICIENCY
Responsivity (Relative Value)
∆
S/S (%)
100
10
TEMPERATURE DEPENDENCE
OF RESPONSIVITY
λ
= 1 300 nm
Quantum Efficiency
η
(%)
80
60
0
40
20
0
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
–10
–60
–40
–20
0
20
40
60
80
100
Wavelength
λ
(
µ
m)
Case Temperature T
C
(˚C)
REVERSE VOLTAGE DEPENDENCE
OF DARK CURRENT
10
T
C
= +75 ˚C
10
TEMPERATURE DEPENDENCE
OF DARK CURRENT
V
R
= 5 V
1.0
Dark Current I
D
(nA)
+25 ˚C
0.1
0 ˚C
–25 ˚C
0.01
Dark Current I
D
(nA)
1.0
+50 ˚C
0.1
0.01
0.001
0
10
Reverse Voltage V
R
(V)
20
0.001
–60 –40 –20
0
20
40
60
80
100
Case Temperature T
C
(˚C)
FREQUENCY RESPONSE
5
V
R
= 10 V
λ
= 1 300 nm
R
L
= 50
Ω
REVERSE VOLTAGE DEPENDENCE
OF TERMINAL CAPACITANCE
f = 1.0 MHz
Terminal Capacitance C
t
(pF)
Response (3dB/div.)
1
0
2.5
Frequency f (GHz)
5.0
0.5
0.01
0.1
1
10
100
Reverse Voltage V
R
(V)
Remark
The graphs indicate nominal characteristics.
Data Sheet P10263EJ4V0DS00
3
NDL5471R Series
InGaAs PIN-PD
Absolute maximum ratings
Part number
P
in
(mW)
NDL5421P/P1/P2
8
T
C
(°C)
T
stg
(°C)
Detecting
area size
(
µ
m)
Typical characteristics (T
C
= 25°C)
I
D
(nA)
VR
(V)
5
TYP.
0.1
C
t
(pF)
VR
(V)
5
TYP.
0.7
S (A/W)
f
C
Package
λ
(nm)
1300
1550
TYP. (GHz)
MIN.
0.89
0.94
0.89
1.00
0.89
0.94
0.89
1.00
0.85
2.5
Coaxial
1.5
Receptacle
2.5
2.5
Butterfly with
AMP
Coaxial
2.5
Coaxial
–40 to +85 –40 to +85
φ
50
NDL5422P
–
–40 to +70 –40 to +85
φ
50
5
0.1
–
–
1300
1550
NDL5461P/P1/P2
8
–40 to +85 –40 to +85
φ
80
5
0.1
5
1.0
1300
1550
NDL5471RC/RD
8
–40 to +85 –40 to +85
φ
120
5
0.1
5
1.1
1300
1550
NDL5481P/P1/P2
8
–40 to +85 –40 to +85
φ
80
10
0.1
10
0.7
1300
4
Data Sheet P10263EJ4V0DS00
NDL5471R Series
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
Quality grades on NEC semiconductor devices
Semiconductor device mounting technology manual
Semiconductor selection guide
Document No.
C11159E
C11531E
C10535E
X10679E
Data Sheet P10263EJ4V0DS00
5
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