September 1996
NDP7051L / NDB7051L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
Features
67 A, 50 V. R
DS(ON)
= 0.0145
Ω
@ V
GS
= 5 V
R
DS(ON)
= 0.0115
Ω
@ V
GS
= 10 V.
Low drive requirements allowing operation directly from logic
drivers. V
GS(TH)
< 2.0V.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
DGR
V
GSS
I
D
Parameter
Drain-Source Voltage
T
C
= 25°C unless otherwise noted
NDP7051L
50
50
±16
±25
67
200
130
0.87
-65 to 175
NDB7051L
Units
V
V
V
Drain-Gate Voltage (R
GS
< 1 M
Ω
)
Gate-Source Voltage - Continuous
- Nonrepetitive (t
P
< 50 µs)
Drain Current
- Continuous
- Pulsed
A
P
D
Maximum Power Dissipation @ T
C
= 25°C
Derate above 25°C
W
W/°C
°C
T
J
,T
STG
Operating and Storage Temperature Range
© 1997 Fairchild Semiconductor Corporation
NDP7051L Rev.D/NDB7051L Rev.E
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
I
AR
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Single Pulse Drain-Source Avalanche
Energy
V
DD
= 25 V, I
D
= 67 A
430
67
mJ
A
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 40 V, V
GS
= 0 V
T
J
= 125°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 16 V, V
DS
= 0 V
V
GS
= -16 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125°C
Static Drain-Source On-Resistance
V
GS
= 5 V, I
D
= 34 A
T
J
= 125°C
V
GS
= 10 V, I
D
= 34 A
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
V
GS
= 5 V, V
DS
= 10 V
V
DS
= 5 V, I
D
= 34 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
60
50
1
0.65
1.24
0.84
0.013
0.018
0.01
50
10
1
100
100
V
µA
mA
nA
nA
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
2
1.5
0.0145
0.026
0.0115
A
S
V
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2700
850
300
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 1)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 12 V
I
D
= 67 A , V
GS
= 5 V
V
DD
= 25 V, I
D
= 34 A,
V
GS
= 5 V, R
GEN
= 10
Ω
R
GS
= 10
Ω
17
182
82
157
56
9
32
30
300
150
250
80
nS
nS
nS
nS
nC
nC
nC
NDP7051L Rev.D/NDB7051L Rev.E
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
I
SM
V
SD
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 34 A (
Note 1)
T
J
= 125°C
t
rr
I
rr
Reverse Recovery Time
Reverse Recovery Current
V
GS
= 0 V, I
F
= 67 A,
dI
F
/dt = 100 A/µs
40
2
0.92
0.83
75
3.6
67
200
1.3
1.2
150
10
A
A
V
V
ns
A
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.15
62.5
°C/W
°C/W
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP7051L Rev.D/NDB7051L Rev.E
Typical Electrical Characteristics
100
2
V
GS
=10V
I
D
, DRAIN-SOURCE CURRENT (A)
80
5.0
DRAIN-SOURCE ON-RESISTANCE
4.5
4.0
R
DS(on)
, NORMALIZED
1.8
1.6
1.4
1.2
1
0.8
0.6
3.5
60
V
GS
=3V
3.5
4.0
4.5
5.0
6.0
10
0
20
I
D
40
3.0
20
2.5
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
5
40
60
, DRAIN CURRENT (A)
80
100
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
2
2
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 5.0V
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.8
I
D
= 34A
V
GS
= 5.0V
1.5
TJ = 125°C
R
DS(ON)
, NORMALIZED
25°C
1
0.5
-55°C
0
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
0
20
40
60
I
D
, DRAIN CURRENT (A)
80
100
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation
with Drain Current and Temperature
.
60
1.3
V
DS
= 5V
50
25°C
125°C
GATE-SOURCE THRESHOLD VOLTAGE
T = -55°C
J
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
-50
-25
0
V
DS
= V
GS
I
D
= 250µA
I
D
, DRAIN CURRENT (A)
40
V
th
, NORMALIZED
30
20
10
0
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
4
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
Figure 5. Transfer Characteristics
.
Figure 6. Gate Threshold Variation
with Temperature
.
NDP7051L Rev.D/NDB7051L Rev.E
Typical Electrical Characteristics
(continued)
1.15
60
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.1
I
S
, REVERSE DRAIN CURRENT (A)
I
D
= 250µA
20
10
V
GS
=0V
TJ = 125°C
BV
DSS
, NORMALIZED
1
0.5
0.1
25°C
1.05
-55°C
0.01
1
0.95
0.001
0.0001
0.9
-50
0
0.2
V
SD
0.4
0.6
0.8
1
1.2
-25
0
T
J
25
50
75
100
125
, JUNCTION TEMPERATURE (°C)
150
175
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Breakdown Voltage
Variation with Temperature
.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
.
6000
4000
V
GS
, GATE-SOURCE VOLTAGE (V)
3000
CAPACITANCE (pF)
2000
10
I
D
= 67A
Ciss
8
V
DS
= 12V
24V
48V
6
1000
Coss
4
500
f = 1 MHz
V
GS
= 0 V
Crss
2
200
1
V
DS
0
5
10
15
20
30
50
0
20
, DRAIN TO SOURCE VOLTAGE (V)
40
60
80
Q
g
, GATE CHARGE (nC)
100
120
Figure 9. Capacitance Characteristics
.
Figure 10. Gate Charge Characteristics
.
V
DD
t
on
t
off
t
r
90%
V
IN
D
R
L
V
OUT
DUT
t
d(on)
t
d(off)
90%
t
f
V
GEN
R
GEN
R
GS
G
V
OUT
10%
10%
INVERTED
90%
S
V
IN
10%
50%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms
.
NDP7051L Rev.D/NDB7051L Rev.E
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