PD - 94815
SMPS MOSFET
Applications
l
l
IRFB52N15DPbF
IRFS52N15D
IRFSL52N15D
HEXFET
®
Power MOSFET
High frequency DC-DC converters
Lead-Free ( only the TO-220AB version
is currently available in a lead-free
configuration)
V
DSS
150V
R
DS(on)
max
0.032Ω
I
D
60A
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
TO-220AB
D
2
Pak
IRFB52N15DPbF IRFS52N15D
TO-262
IRFSL52N15D
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
60
43
240
3.8
320
2.1
± 30
5.5
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Notes
through
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
are on page 11
Typ.
–––
0.50
–––
–––
Max.
0.47
–––
62
40
Units
°C/W
www.irf.com
1
11/5/03
IRFB52N15DPbF/IRFS/IRFSL52N15D
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
150
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.16
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.032
Ω
V
GS
= 10V, I
D
= 36A
5.0
V
V
DS
= V
GS
, I
D
= 250µA
25
V
DS
= 150V, V
GS
= 0V
µA
250
V
DS
= 120V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 30V
nA
-100
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
60
18
28
16
47
28
25
2770
590
110
3940
260
550
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 36A
89
I
D
= 36A
27
nC V
DS
= 75V
42
V
GS
= 10V,
–––
V
DD
= 75V
–––
I
D
= 36A
ns
–––
R
G
= 2.5Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 120V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 120V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
470
36
32
Units
mJ
A
mJ
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
60
––– –––
showing the
A
G
integral reverse
––– ––– 240
S
p-n junction diode.
––– ––– 1.5
V
T
J
= 25°C, I
S
= 36A, V
GS
= 0V
––– 140 210
nS
T
J
= 25°C, I
F
= 36A
––– 780 1170 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
www.irf.com
IRFB52N15DPbF/IRFS/IRFSL52N15D
1000
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
10
10
5.0V
1
5.0V
300µs PULSE WIDTH
Tj = 25°C
1
0.1
0.1
1
300µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
3.0
I
D
= 60A
ID, Drain-to-Source Current
(Α
)
2.5
100.00
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
T J = 175°C
2.0
1.5
10.00
T J = 25°C
1.0
1.00
5.0
7.0
9.0
VDS = 15V
300µs PULSE WIDTH
11.0
13.0
15.0
0.5
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= 10V
100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFB52N15DPbF/IRFS/IRFSL52N15D
100000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
12
VGS, Gate-to-Source Voltage (V)
ID = 36A
VDS = 120V
VDS = 75V
10
8
6
4
2
0
10000
C, Capacitance(pF)
Ciss
1000
Coss
100
Crss
10
1
10
100
1000
0
10
20
30
40
50
60
70
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
T J = 175°C
ID , Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
10
1msec
10.00
T J = 25°C
1.00
VGS = 0V
0.10
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-toDrain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
100
10msec
0.1
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFB52N15DPbF/IRFS/IRFSL52N15D
70
V
DS
60
R
D
V
GS
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
50
-
V
DD
I
D
, Drain Current (A)
40
30
Fig 10a.
Switching Time Test Circuit
20
V
DS
10
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( ° C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
(Z
thJC
)
D = 0.50
0.1
0.20
0.10
Thermal Response
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T
t
1
/ t
2
+T
C
1
J
= P
DM
x Z
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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