Doc No.
TT4-EA-10073
Revision.
2
Product Standards
MOS FET
MTM761230LBF
MTM761230LBF
Silicon P-channel MOSFET
For Switching
6
Unit : mm
2.0
0.2
5
4
0.13
Features
Low drain-source On-state Resistance : RDS(on) typ. = 36 m
(VGS = -4 V)
Low drive voltage : 2.5 V drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
1
2
3
1.7
2.1
0.7
(0.65)
(0.65)
1.3
Marking Symbol : 9C
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Drain
2. Drain
3. Gate
4. Source
5. Drain
6. Drain
WSMini6-F1-B
SC-113DA
―
Absolute Maximum Ratings Ta = 25
C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current (Pulsed)
*1
Total Power Dissipation
*2
Channel Temperature
Operating Ambient Temperature
Storage Temperature Range
Note)
Symbol
VDS
VGS
ID
IDp
PD
Tch
Topr
Tstg
Rating
-20
10
-3
-16
700
150
-40 to +85
-55 to +150
Unit
V
V
A
A
mW
C
C
C
Panasonic
JEITA
Code
Internal Connection
(D)
6
(D)
5
(S)
4
*1 Pulse width
10
s,
Duty cycle
1 %
*2 Measuring on ceramic board at 40 mm
38 mm
0.1 mm
Absolute maximum rating PD Non-heat sink shall be made 150 mW.
1
(D)
2
(D)
3
(G)
Pin Name
1. Drain
2. Drain
3. Gate
4. Source
5. Drain
6. Drain
Page 1 of 6
Established : 2007-11-07
Revised
: 2013-06-18
Doc No.
TT4-EA-10073
Revision.
2
Product Standards
MOS FET
MTM761230LBF
Electrical Characteristics Ta = 25
C
3
C
Parameter
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-source Leakage Current
Gate-source Threshold Voltage
Drain-source On-state Resistance
Forward transfer admittance
*1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
*2
Turn-off Delay Time
*2
Note)
*1
Symbol
VDSS
IDSS
IGSS
Vth
Conditions
Min
-20
Typ
Max
-1
10
-1.3
55
70
Unit
V
A
A
V
m
S
ID = -1 mA, VGS = 0 V
VDS = -20 V, VGS = 0 V
VGS =
8
V, VDS = 0 V
ID = -1 mA, VDS = -10 V
RDS(on)1
ID = -1 A, VGS = -4 V
RDS(on)2
ID = -0.5 A, VGS = -2.5 V
ID = -1 A, VDS = -10 V, f = 1 kHz
|Yfs|
Ciss
VDS = -10 V, VGS = 0 V
Coss
f = 1 MHz
Crss
VDD = -10 V, VGS = 0 to -4 V
ton
ID = -1 A
VDD = -10 V, VGS = -4 to 0 V
toff
ID = -1 A
-0.4
-0.85
36
42
1 000
100
100
30
250
3.5
pF
ns
ns
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Pulse test : Pulse width
300
s,
Duty cycle
2 %
*2 Measurement circuit for Turn-on Delay Time / Turn-off Delay Time
Page 2 of 6
Established : 2007-11-07
Revised
: 2013-06-18
Doc No.
TT4-EA-10073
Revision.
2
Product Standards
MOS FET
MTM761230LBF
*2 Measurement circuit for Turn-on Delay Time / Turn-off Delay Time
VDD = -10 V
ID = -1 A
RL = 10
0V
-4 V
PW = 10
s
D.C.
1 %
ton
toff
Page 3 of 6
Established : 2007-11-07
Revised
: 2013-06-18
Doc No.
TT4-EA-10073
Revision.
2
Product Standards
MOS FET
MTM761230LBF
Technical Data ( reference )
ID - VDS
-3
-4 V
-2.5
-0.01
-0.008
Ta = 85
℃
ID - VGS
Drain Current ID (A)
-2
-2 V
-1.5
-1
-0.5
0
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
VGS = -1 V
-1.5 V
Drain current ID (A)
-2.5 V
-0.006
25
℃
-0.004
-0.002
0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-
40
℃
Drain-source Voltage VDS (V)
Gate-source voltage VGS (V)
VDS - VGS
-0.5
RDS(on) - ID
Drain-source On-state Resistance
RDS(on) (m)
100
Drain-source Voltage VDS (V)
-0.4
-0.3
-0.2
-0.1
-0.5 A
0
0
-1
-2
-3
-4
-5
-6
VGS = -2.5 V
-4 V
-1 A
ID = -2 A
10
-0.1
-1
Gate-source Voltage VGS (V)
Drain Current ID (A)
Capacitance - VDS
10000
-10
Dynamic Input/Output Characteristics
Gate-source Voltage VGS (V)
Capacitance C (pF)
-8
VDD = -10 V
-6
-4
-2
0
1000
Ciss
100
Coss
Crss
10
-0.1
-1
-10
-100
0
5
10
15
20
25
30
Drain-source voltage VDS (V)
Total Gate Charge Qg (nC)
Page 4 of 6
Established : 2007-11-07
Revised
: 2013-06-18
Doc No.
TT4-EA-10073
Revisio n.
2
Product Standards
MOS FET
MTM761230LBF
Technical Data ( reference )
-1
Vth - Ta
80
70
RDS(on) - Ta
VGS = -2.5 V
Gate-source Threshold Voltage Vth (V)
Drain-source On-resistance
RDS(on) (mΩ)
60
50
40
-4 V
30
20
10
0
-0.5
0
-50
0
50
100
150
-50
0
50
100
150
Temperature (℃)
Temperature (℃)
PD - Ta
1
Total Power Dissipation PD (W)
0.8
0.6
0.4
Mounted on ceramic board
(40 mm
38 mm
0.1 mm)
Non-heat sink
0.2
0
0
50
100
150
Temperature Ta (C)
Rth - tsw
1000
-100
Safe Operating Area
IDp = -16 A
Thermal resistance Rth (C/W)
Drain Current ID (A)
-10
-1
-0.1
-0.01
-0.001
-0.01
1 ms
10 ms
100
Operation in this area
is limited by RDS(on)
Ta = 25
C,
Glass epoxy board (25.4
25.4
0.8 mm)
coated with copper foil,
which has more than 300 mm
2
.
100 ms
1s
DC
10
0.1
1
10
100
1000
-0.1
-1
-10
-100
Pulse Width tsw (s)
Drain-source voltage VDS (V)
Page 5 of 6
Established : 2007 -11-07
Revised
: 2013 -06-18
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