PD - 95270
Applications
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High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Consumer Use
l
Lead-Free
Benefits
l
l
l
HEXFET
®
Power MOSFET
IRL7833PbF
IRL7833SPbF
IRL7833LPbF
Qg
32nC
V
DSS
R
DS(on)
max
30V
3.8m
:
Very Low RDS(on) at 4.5V V
GS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL7833
D
2
Pak
IRL7833S
TO-262
IRL7833L
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
150
600
140
72
0.96
-55 to + 175
Units
V
g
Maximum Power Dissipation
g
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
f
110
f
A
W
W/°C
°C
Mounting Torque, 6-32 or M3 screw
10 lbf in (1.1N m)
y
y
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
Typ.
Max.
1.04
–––
62
40
Units
°C/W
h
h
–––
0.50
–––
–––
gÃ
Notes
through
are on page 12
www.irf.com
1
05/18/04
IRL7833/S/LPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
30
–––
–––
–––
1.4
–––
–––
–––
–––
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
18
3.1
3.7
–––
-11
–––
–––
–––
–––
–––
32
8.7
5.1
13
5.3
18
22
18
50
21
6.9
4170
950
470
–––
–––
3.8
4.5
2.3
–––
1.0
150
100
-100
–––
47
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 15V
ns
nC
nC
V
DS
= 16V
V
GS
= 4.5V
I
D
= 30A
S
nA
V
mV/°C
µA
V
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 38A
V
GS
= 4.5V, I
D
f
= 30A
f
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 30A
See Fig. 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 26A
Clamped Inductive Load
f
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
dh
Typ.
–––
–––
–––
Max.
560
30
14
Units
mJ
A
mJ
Repetitive Avalanche Energy
–––
–––
–––
–––
–––
–––
–––
–––
42
34
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
150
f
Conditions
MOSFET symbol
D
A
600
1.2
63
51
V
ns
nC
Ãh
showing the
integral reverse
G
S
p-n junction diode.
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
T
J
= 25°C, I
F
= 30A, V
DD
= 15V
di/dt = 100A/µs
f
f
2
www.irf.com
IRL7833/S/LPbF
1000
TOP
VGS
10V
7.0V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
1000
TOP
VGS
10V
7.0V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
2.7V
10
2.7V
10
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1000
1
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
100
1000
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 75A
VGS = 10V
T J = 175°C
1.5
100
1.0
TJ = 25°C
10
2.0
3.0
4.0
VDS = 15V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRL7833/S/LPbF
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
12.0
ID= 30A
VGS, Gate-to-Source Voltage (V)
10.0
VDS= 24V
VDS= 15V
C, Capacitance(pF)
10000
8.0
6.0
Ciss
Coss
1000
Crss
4.0
2.0
100
1
10
100
0.0
0
5
10
15
20
25
30
35
40
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.00
T J = 175°C
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100.00
ID, Drain-to-Source Current (A)
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VDS, Drain-to-Source Voltage (V)
10msec
10.00
1.00
T J = 25°C
VGS = 0V
0.10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, Source-to-Drain Voltage (V)
100
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRL7833/S/LPbF
160
2.5
LIMITED BY PACKAGE
VGS(th) Gate threshold Voltage (V)
2.0
120
I
D
, Drain Current (A)
1.5
80
ID = 250µA
1.0
40
0.5
0
25
50
75
100
125
150
175
0.0
T
C
, Case Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150 175
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Threshold Voltage Vs. Temperature
10
(Z
thJC
)
1
D = 0.50
Thermal Response
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
t
1
/ t
2
+T
C
1
P
DM
t
1
t
2
J
= P
DM
x Z
thJC
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
Microchip MCU
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