NTTFS3A08PZ
Power MOSFET
Features
−20
V,
−15
A, Single P−Channel,
m8FL
•
Ultra Low R
DS(on)
to Minimize Conduction Losses
•
m8FL
3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal
Conduction
•
ESD Protection Level of 5 kV per JESD22−A114
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
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V
(BR)DSS
−20
V
R
DS(on)
MAX
6.7 mW @
−4.5
V
9.0 mW @
−2.5
V
P−Channel MOSFET
S
I
D
MAX
−15
A
•
Battery Switch
•
High Side Load Switch
•
Optimized for Power Management Applications for Portable
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation R
qJA
(Note 1)
Continuous Drain
Current R
qJA
≤
10 s
(Note 1)
Power Dissipation
R
qJA
≤
10 s (Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Pulsed Drain Current
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
Steady
State
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C, t
p
= 10
ms
P
D
I
DM
T
J
,
T
stg
V
ESD
I
S
T
L
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
−20
±8
−15
−11
2.3
−22
−16
4.9
−9
−7
0.84
−46
−55
to
+150
5000
−3
260
Products such as Media Tablets, Ultrabook PCs and Cellphones
Unit
V
V
A
1
1
G
D
MARKING DIAGRAM
W
A
WDFN8
(m8FL)
CASE 511AB
3A08
A
Y
WW
G
S
S
S
G
3A08
AYWWG
G
D
D
D
D
W
A
W
A
°C
V
A
°C
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Operating Junction and Storage Temperature
ESD (HBM, JESD22−A114)
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
ORDERING INFORMATION
Device
NTTFS3A08PZTAG
NTTFS3A08PZTWG
Package
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
Shipping
†
1500 / Tape &
Reel
5000 / Tape &
Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
October, 2012
−
Rev. 2
1
Publication Order Number:
NTTFS3A08P/D
NTTFS3A08PZ
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t
≤
10 s) (Note 3)
Symbol
R
qJA
R
qJA
R
qJA
Value
55
148
26
Unit
°C/W
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm
2
, 1 oz. Cu).
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
=
−6
A
V
GS
= 0 V,
I
S
=
−3
A
V
GS
=
−4.5
V, V
DS
=
−10
V,
I
D
=
−8
A, R
G
= 6.0
W
V
GS
=
−4.5
V, V
DS
=
−10
V, I
D
=
−8
A
V
GS
= 0 V, f = 1.0 MHz, V
DS
=
−10
V
V
GS
=
−4.5
V
V
GS
=
−2.5
V
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
T
J
= 25°C
−0.65
207
45
162
234
nC
−1.0
V
ns
13
60
250
170
ns
5000
600
540
56
2.0
6.5
15.4
nC
pF
I
D
=
−12
A
I
D
=
−10
A
V
GS
= V
DS
, I
D
=
−250
mA
−0.4
3.3
4.9
6.9
62
6.7
9.0
S
−1.0
V
mV/°C
mW
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V,
V
DS
=
−16
V
T
J
= 25°C
V
GS
= 0 V, I
D
= 250
mA
−20
6
−1
±5
V
mV/°C
mA
mA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
±5
V
V
DS
=
−1.5
V, I
D
=
−8
A
5. Pulse Test: pulse width = 300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS3A08PZ
TYPICAL CHARACTERISTICS
60
−I
D
, DRAIN CURRENT (A)
50
40
30
20
10
0
60
V
DS
≤
−10
V
−I
D
, DRAIN CURRENT (A)
50
40
30
20
10
0
T
J
= 125°C
T
J
= 25°C
−2
V
−4.5
V to
−2.5
V
V
GS
=
−1.8
V
T
J
=
−55°C
0
0.5
1.0
1.5
2.0
0
0.5
1.0
1.5
2.0
2.5
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
T
J
= 25°C
I
D
=
−12
A
0.015
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
=
−1.8
V
0.010
V
GS
=
−2.5
V
0.005
V
GS
=
−4.5
V
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
0
10
20
30
40
−V
GS
, GATE VOLTAGE (V)
−I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.6
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50
−25
0
25
50
75
100
125
150
100
V
GS
=
−4.5
V
I
D
=
−12.0
A
−I
DSS
, LEAKAGE (nA)
10,000
100,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 125°C
T
J
= 85°C
1000
2
4
6
8
10
12
14
16
18
20
T
J
, JUNCTION TEMPERATURE (°C)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTTFS3A08PZ
TYPICAL CHARACTERISTICS
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
8000
7200
C, CAPACITANCE (pF)
6400
5600
4800
4000
3200
2400
1600
800
0
C
oss
C
rss
0
2
4
6
8
10
12
14
16
18
20
C
iss
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
5
4
Q
T
18
16
V
GS
14
12
10
8
V
DS
=
−10
V
I
D
=
−8
A
T
J
= 25°C
6
4
2
60
0
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
3
V
DS
2 Q
GS
1
0
Q
GD
0
10
20
30
40
50
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
t
d(off)
t, TIME (ns)
100
t
f
t
r
10
t
d(on)
V
GS
=
−4.5
V
V
DD
=
−10
V
I
D
=
−8
A
1
1
10
R
G
, GATE RESISTANCE (W)
100
−I
S
, SOURCE CURRENT (A)
10
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
T
J
= 25°C
T
J
= 125°C
1
T
J
=
−55°C
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0.95
0.85
0.75
−V
GS(th)
(V)
0.65
0.55
0.45
0.35
0.25
0.15
−50
−25
0
25
50
75
100
125
150
I
D
=
−250
mA
POWER (W)
400
350
300
250
200
150
100
50
0
Figure 10. Diode Forward Voltage vs. Current
1.E−04
1.E−02
1.E+00
1.E+02
T
J
, TEMPERATURE (°C)
SINGLE PULSE TIME (s)
Figure 11. Threshold Voltage
Figure 12. Single Pulse Maximum Power
Dissipation
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4
NTTFS3A08PZ
TYPICAL CHARACTERISTICS
100
−I
D
, DRAIN CURRENT (A)
100
ms
1 ms
V
GS
=
−8
V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
10 ms
10
1
0.1
dc
0.01
100
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
60
R(t), EFFECTIVE TRANSIENT
THERMAL RESPONSE
R
qJA
= 55°C/W
50
40
30
20
10
0
0.20
0.10
1E−06
1E−05
1E−04
1E−03
1E−02
t, TIME (s)
Duty Cycle = 0.5
0.05
0.02
0.01
Single Pulse
1E−01
1E+00
1E+01
1E+02
1E+03
Figure 14. FET Thermal Response
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