NTMD6N02R2
Power MOSFET
6.0 Amps, 20 Volts
N−Channel Enhancement Mode
Dual SO−8 Package
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Features
V
DSS
20 V
R
DS(ON)
TYP
35 mW @ V
GS
= 4.5 V
I
D
MAX
6.0 A
•
•
•
•
•
•
•
•
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Dual SOIC−8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
SOIC−8 Mounting Information Provided
Pb−Free Package is Available
N−Channel
D
G
S
Applications
•
DC−DC Converters
•
Low Voltage Motor Control
•
Power Management in Portable and Battery−Powered Products,
for example, Computers, Printers, Cellular and Cordless Telephones
and PCMCIA Cards
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
GS
= 1.0 MW)
Gate−to−Source Voltage − Continuous
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Pulsed Drain Current (Note 4)
Thermal Resistance,
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Pulsed Drain Current (Note 4)
Thermal Resistance
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Pulsed Drain Current (Note 4)
Symbol
V
DSS
V
DGR
V
GS
R
qJA
P
D
I
D
I
D
I
DM
R
qJA
P
D
I
D
I
D
I
DM
R
qJA
P
D
I
D
I
D
I
DM
Value
20
20
"12
62.5
2.0
6.5
5.5
50
102
1.22
5.07
4.07
40
172
0.73
3.92
3.14
30
Unit
V
V
V
°C/W
W
A
A
A
°C/W
W
A
A
A
°C/W
W
A
A
A
8
1
SOIC−8
CASE 751
STYLE 11
MARKING DIAGRAM
& PIN ASSIGNMENT
Source 1
Gate 1
Source 2
Gate 2
1
2
3
4
(Top View)
E6N02 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
E6N02
ALYWG
G
8
7
6
5
Drain 1
Drain 1
Drain 2
Drain 2
ORDERING INFORMATION
Device
NTMD6N02R2
NTMD6N02R2G
Package
SOIC−8
SOIC−8
(Pb−Free)
Shipping
†
2500/Tape & Reel
2500/Tape & Reel
1. Mounted onto a 2 in square FR−4 Board
(1 in sq. 2 oz. Cu 0.06 in thick single sided), t < 10 seconds.
2. Mounted onto a 2 in square FR−4 Board
(1 in sq. 2 oz. Cu 0.06 in thick single sided), t = steady state.
3. Minimum FR−4 or G−10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 10
ms,
Duty Cycle = 2%.
©
Semiconductor Components Industries, LLC, 2005
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Publication Order Number:
NTMD6N02R2/D
August, 2005 − Rev. 3
NTMD6N02R2
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted) (continued)
Rating
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy − Starting T
J
= 25°C
(V
DD
= 20 Vdc, V
GS
= 5.0 Vdc, Peak I
L
= 6.0 Apk, L = 20 mH, R
G
= 25
W)
Maximum Lead Temperature for Soldering Purposes for 10 seconds
Symbol
T
J
, T
stg
E
AS
T
L
Value
−55 to +150
360
260
Unit
°C
mJ
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted) (Note 5)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 25°C)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
Gate−Body Leakage Current (V
GS
= +12 Vdc, V
DS
= 0 Vdc)
Gate−Body Leakage Current (V
GS
= −12 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= −250
mAdc)
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
(V
GS
= 4.5 Vdc, I
D
= 6.0 Adc)
(V
GS
= 4.5 Vdc, I
D
= 4.0 Adc)
(V
GS
= 2.7 Vdc, I
D
= 2.0 Adc)
(V
GS
= 2.5 Vdc, I
D
= 3.0 Adc)
Forward Transconductance (V
DS
= 12 Vdc, I
D
= 3.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Notes 6 and 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(V
DS
= 16 Vdc,
V
GS
= 4.5 Vdc,
I
D
= 6.0 Adc)
(V
DD
= 16 Vdc, I
D
= 4.0 Adc,
V
GS
= 4.5 Vdc,
R
G
= 6.0
W)
(V
DD
= 16 Vdc, I
D
= 6.0 Adc,
V
GS
= 4.5 Vdc,
R
G
= 6.0
W)
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
tot
Q
gs
Q
gd
−
−
−
−
−
−
−
−
−
−
−
12
50
45
80
11
35
45
60
12
1.5
4.0
20
90
75
130
18
65
75
110
20
−
−
nC
ns
ns
(V
DS
= 16 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
785
260
75
1100
450
180
pF
V
GS(th)
0.6
−
R
DS(on)
−
−
−
−
g
FS
−
0.028
0.028
0.033
0.035
10
0.035
0.043
0.048
0.049
−
Mhos
0.9
−3.0
1.2
−
Vdc
mV/°C
W
V
(BR)DSS
20
−
I
DSS
−
−
I
GSS
I
GSS
−
−
−
−
−
−
1.0
10
100
−100
nAdc
nAdc
−
19.2
−
−
Vdc
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
5. Handling precautions to protect against electrostatic discharge is mandatory
6. Indicates Pulse Test: Pulse Width = 300
ms
max, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.
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2
NTMD6N02R2
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted) (continued) (Note 8)
Characteristic
BODY−DRAIN DIODE RATINGS
(Note 9)
Diode Forward On−Voltage
(I
S
= 4.0 Adc, V
GS
= 0 Vdc)
(I
S
= 6.0 Adc, V
GS
= 0 Vdc)
(I
S
= 6.0 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
(I
S
= 6.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms)
Reverse Recovery Stored Charge
8. Handling precautions to protect against electrostatic discharge is mandatory.
9. Indicates Pulse Test: Pulse Width = 300
ms
max, Duty Cycle = 2%.
V
SD
−
−
−
−
−
−
−
0.83
0.88
0.75
30
15
15
0.02
1.1
1.2
−
−
−
−
−
mC
Vdc
Symbol
Min
Typ
Max
Unit
Reverse Recovery Time
t
rr
t
a
t
b
Q
RR
ns
12
I D, DRAIN CURRENT (AMPS)
10
8
10 V
2.5 V
4.5 V
3.2 V
2.0 V
ID, DRAIN CURRENT (AMPS)
T
J
= 25°C
1.8 V
12
V
DS
≥
10 V
10
8
6
4
2
0
100°C
25°C
6
4
2
0
V
GS
= 1.5 V
T
J
= −55°C
0
0.25
0.5
0.75
1
1.25
1.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.75
0.5
1
1.5
2
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2.5
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
2
4
6
8
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
I
D
= 6.0 A
T
J
= 25°C
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.05
T
J
= 25°C
0.04
V
GS
= 2.5 V
0.03
4.5 V
0.02
0.01
1
3
5
7
9
I
D
, DRAIN CURRENT (AMPS)
11
13
Figure 3. On−Resistance versus
Gate−To−Source Voltage
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
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3
NTMD6N02R2
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.6
I
D
= 6.0 A
V
GS
= 4.5 V
1000
V
GS
= 0 V
T
J
= 125°C
100°C
10
1.2
I DSS , LEAKAGE (nA)
1.4
100
1
1
25°C
0.8
0.6
−50
0.1
0.01
−25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
4
8
12
16
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
20
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage Current
versus Voltage
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
2500
V
DS
= 0 V
C
iss
V
GS
= 0 V
5
QT
4
V
DS
3
Q1
Q2
I
D
= 6 A
V
DS
= 16 V
V
GS
= 4.5 V
T
J
= 25°C
V
GS
20
T
J
= 25°C
C, CAPACITANCE (pF)
2000
16
1500
C
rss
12
1000
C
iss
C
oss
2
8
500
C
rss
0
10
5
0
V
GS
V
DS
5
10
15
1
0
0
4
8
12
16
Q
g
, TOTAL GATE CHARGE (nC)
4
0
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1000
V
DS
= 16 V
I
D
= 6.0 A
V
GS
= 4.5 V
t, TIME (ns)
100
t
f
t
r
t
d(off)
10
1
t
d(on)
10
R
G
, GATE RESISTANCE (OHMS)
100
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
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4
V DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
NTMD6N02R2
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
5
I S, SOURCE CURRENT (AMPS)
V
GS
= 0 V
T
J
= 25°C
100
I D , DRAIN CURRENT (AMPS)
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
10
1 ms
10 ms
1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
4
100
ms
3
2
1
0
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
dc
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
di/dt
I
S
t
rr
t
a
t
b
TIME
t
p
I
S
0.25 I
S
Figure 12. Diode Reverse Recovery Waveform
TYPICAL ELECTRICAL CHARACTERISTICS
1
Rthja(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
t
2
DUTY CYCLE, D = t
1
/t
2
1.0E−03
1.0E−02
1.0E−01
t, TIME (s)
1.0E+00
t
1
P
(pk)
R
qJC
(t) = r(t) R
qJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
R
qJC
(t)
1.0E+01
1.0E+02
1.0E+03
0.1
SINGLE PULSE
0.001
1.0E−05
1.0E−04
Figure 13. Thermal Response
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