AUTOMOTIVE GRADE
PD - 96319
Features
l
l
l
l
l
l
l
HEXFET
®
Power MOSFET
D
AUIRF3805
AUIRF3805S
AUIRF3805L
55V
2.6mΩ
3.3mΩ
210A
c
max.
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V
(BR)DSS
R
DS(on)
typ.
G
S
I
D (Silicon Limited)
I
D (Package Limited)
160A
D
D
Description
Specifically designed for Automotive applications, this
HEXFET
®
Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
D
G
D
S
G
D
S
G
D
S
TO-220AB
AUIRF3805
G
D
2
Pak
AUIRF3805S
D
TO-262
AUIRF3805L
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure
to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
Max.
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Thermal Resistance
R
θJC
R
θCS
R
θJA
R
θJA
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
(Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
d
Ãd
e
e
h
210
150
160
890
300
2.0
± 20
650
940
See Fig.12a, 12b, 15, 16
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
°C
i
300
10 lbf in (1.1N m)
y
y
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
k
i
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.5
–––
62
40
i
j
l
Units
°C/W
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10
AUIRF3805/S/L
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
55
–––
–––
2.0
75
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.051
2.6
–––
–––
–––
–––
–––
–––
190
52
72
150
20
93
87
4.5
7.5
7960
1260
630
4400
980
1550
–––
–––
3.3
4.0
–––
20
250
200
-200
290
–––
–––
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
–––
–––
–––
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 75A **
V V
DS
= V
GS
, I
D
= 250µA
V V
DS
= 25V, I
D
= 75A **
V
DS
= 55V, V
GS
= 0V
µA
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
nA
V
GS
= -20V
f
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
nC
I
D
= 75A **
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 75A**
R
G
= 2.6
Ω
V
GS
= 10V
Between lead,
f
f
ns
D
6mm (0.25in.)
from package
G
pF
S
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
g
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Note
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
36
47
210
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
through
,,
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 75A** , V
GS
= 0V
T
J
= 25°C, I
F
= 75A** , V
DD
= 28V
di/dt = 100A/µs
A
V
ns
nC
Ã
890
1.3
54
71
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
∗ ∗
are on page 3
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2
AUIRF3805/S/L
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments:
This
part
number(s)
passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
3L-D2 PAK
MSL1 , 260°C
N/A
Class M4(+/-425V)
(per AEC-Q101-002)
Class H3A(+/-4000V)
(per AEC-Q101-001)
Class C5 (+/-1000V)
(per AEC-Q101-005)
Yes
Moisture Sensitivity Level
3L-TO-262
3L-TO-220
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Notes:
Calculated continuous current based on maximum
allowable junction temperature. Bond wire current
limit is 160A. Note that current limitations arising from
heating of the device leads may occur with some lead
mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature. (See fig. 11).
This value determined from sample failure population ,
starting T
J
= 25°C, L = 0.23mH R
G
= 25Ω, I
AS
= 75A,
V
GS
=10V.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time
as C
oss
while V
DS
is rising from 0 to
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This is only applied to TO-220AB pakcage.
This is applied to D
2
Pak, when mounted on 1" square PCB
(FR- 4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
R
θ
is measured at
T
J
of approximately 90°C.
TO-220 device will have an Rth of 0.45°C/W.
* *
All AC and DC test condition based on former Package limitated
current of 75A.
80% V
DSS
.
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3
AUIRF3805/S/L
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
4.5V
≤
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
10
0.1
4.5V
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.0
200
TJ = 175°C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
(Α)
TJ = 25°C
160
TJ = 175°C
100.0
120
10.0
TJ = 25°C
1.0
80
VDS = 20V
≤
60µs PULSE WIDTH
0.1
4.0
5.0
6.0
7.0
8.0
40
VDS = 10V
380µs PULSE WIDTH
0
20
40
60
80 100 120 140 160 180
0
ID, Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
4
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AUIRF3805/S/L
14000
12000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
VGS, Gate-to-Source Voltage (V)
ID= 75A
16
VDS = 44V
VDS= 28V
C, Capacitance (pF)
10000
8000
6000
4000
2000
0
1
Ciss
12
8
Coss
Crss
10
100
4
0
0
50
100
150
200
250
300
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
10000
ISD , Reverse Drain Current (A)
TJ = 175°C
100.0
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100µsec
100
10msec
10
1msec
10.0
TJ = 25°C
1.0
1
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
100
1000
0.1
VDS , Drain-toSource Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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