MBRM120ET1G,
NRVBM120ET1G,
MBRM120ET3G,
NRVBM120ET3G
Surface Mount
Schottky Power Rectifier
POWERMITE
Power Surface Mount Package
The Schottky POWERMITE
employs the Schottky Barrier
principle with a barrier metal and epitaxial construction that produces
optimal forward voltage drop−reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the POWERMITE
has the same thermal performance as the SMA
while being 50% smaller in footprint area, and delivering one of the
lowest height profiles,
1.1 mm in the industry. Because of its small
size, it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
Features
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 20 VOLTS
POWERMITE
CASE 457
STYLE 1
MARKING DIAGRAM
1
Low Profile
−
Maximum Height of 1.1 mm
Small Footprint
−
Footprint Area of 8.45 mm2
Low V
F
Provides Higher Efficiency and Extends Battery Life
ESD Ratings:
Machine Model = C (> 400 V)
Human Body Model = 3B (> 16,000 V)
Supplied in 12 mm Tape and Reel
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
AEC−Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
POWERMITE
is JEDEC Registered as DO−216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 16.3 mg (approximately)
Lead and Mounting Surface Temperature for Soldering Purposes
260C Maximum for 10 Seconds
M
BCVG
2
BCV
M
G
= Device Code
= Date Code
= Pb−Free Package
ORDERING INFORMATION
Device
MBRM120ET1G
NRVBM120ET1G
MBRM120ET3G
NRVBM120ET3G
Package
POWERMITE
(Pb−Free)
POWERMITE
(Pb−Free)
POWERMITE
(Pb−Free)
POWERMITE
(Pb−Free)
Shipping
†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
12,000 /
Tape & Reel
12,000 /
Tape & Reel
Mechanical Characteristics
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012
−
Rev. 3
1
Publication Order Number:
MBRM120E/D
MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V
R
, T
C
= 130C)
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 20 kHz, T
C
= 135C)
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change
(Rated V
R
, T
J
= 25C)
Symbol
V
RRM
V
RWM
V
R
I
O
I
FRM
I
FSM
T
stg
T
J
dv/dt
Value
20
Unit
V
1.0
2.0
50
−65
to 150
−65
to 150
10,000
A
A
A
C
C
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
−
Junction−to−Lead (Anode) (Note 1)
Thermal Resistance
−
Junction−to−Tab (Cathode) (Note 1)
Thermal Resistance
−
Junction−to−Ambient (Note 1)
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 and 10.
Symbol
R
tjl
R
tjtab
R
tja
Value
35
23
277
Unit
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
(I
F
= 0.1 A)
(I
F
= 1.0 A)
(I
F
= 2.0 A)
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
(V
R
= 20 V)
(V
R
= 10 V)
(V
R
= 5.0 V)
2. Pulse Test: Pulse Width
250
ms,
Duty Cycle
2%.
I
R
Symbol
V
F
T
J
= 25C
0.455
0.530
0.595
T
J
= 25C
10
1.0
0.5
Value
T
J
= 100C
0.360
0.455
0.540
T
J
= 100C
1600
500
300
mA
Unit
V
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2
MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
10
T
J
= 150C
T
J
= 100C
T
J
= 25C
T
J
=
−40C
1.0
10
T
J
= 150C
T
J
= 100C
1.0
T
J
= 25C
0.1
0.2
0.4
0.6
0.8
0.1
0.2
0.4
0.6
0.8
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
Figure 1. Typical Forward Voltage
I
R
, MAXIMUM REVERSE CURRENT (AMPS)
Figure 2. Maximum Forward Voltage
100E−3
I
R
, REVERSE CURRENT (AMPS)
10E−3
1E−3
T
J
= 150C
T
J
= 100C
100E−3
10E−3
1E−3
T
J
= 150C
T
J
= 100C
100E−6
10E−6
1E−6
100E−6
10E−6
1E−6
T
J
= 25C
100E−9
10E−9
0
5.0
T
J
= 25C
100E−9
10E−9
0
5.0
10
15
20
10
15
20
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
45
SQUARE WAVE
I
pk
/I
o
=
p
I
pk
/I
o
= 5
I
pk
/I
o
= 10
I
pk
/I
o
= 20
dc
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Figure 4. Maximum Reverse Current
I
O
, AVERAGE FORWARD CURRENT (AMPS)
P
FO
, AVERAGE DISSIPATION (WATTS)
FREQ = 20 kHz
I
pk
/I
o
=
p
I
pk
/I
o
= 5
I
pk
/I
o
= 10
I
pk
/I
o
= 20
SQUARE
WAVE
dc
65
85
105
125
145
165
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
T
L
, LEAD TEMPERATURE (C)
I
O
, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G
T
J
, DERATED OPERATING TEMPERATURE
(_C)
1000
150
R
tja
= 33.72C/W
C, CAPACITANCE (pF)
T
J
= 25C
51C/W
69C/W
83.53C/W
96C/W
148
100
146
10
0
2.0
4.0
6.0
8.0
10
12
14
16
18
20
144
0
2.0
4.0
6.0
8.0
10
12
14
16
18
20
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, DC REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
J
therefore must include forward and reverse power effects. The allowable operating
T
J
= T
Jmax
−
r(t)(Pf + Pr) where
T
J
may be calculated from the equation:
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T
J
due to reverse bias under DC conditions only and is calculated as T
J
= T
Jmax
−
r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
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4
MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G
R
(T)
, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
50%
0.1
20%
10%
5.0%
0.01
2.0%
1.0%
Rtjl(t) = Rtjl*r(t)
0.001
0.00001
0.0001
0.001
0.01
T, TIME (s)
0.1
1.0
10
100
Figure 9. Thermal Response Junction to Lead
R
(T)
, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
50%
0.1
20%
10%
5.0%
0.01
2.0%
Rtjl(t) = Rtjl*r(t)
1.0%
0.001
0.00001
0.0001
0.001
0.01
0.1
T, TIME (s)
1.0
10
100
1,000
Figure 10. Thermal Response Junction to Ambient
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