Freescale Semiconductor
Technical Data
Document Number: MRF5P21180HR6
Rev. 3, 10/2008
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
•
Typical 2--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQ
= 1600 mA, Pout = 38 Watts Avg., Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — --37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --41 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Lower Thermal Resistance Package
•
Low Gold Plating Thickness on Leads, 40
µ
″
Nominal.
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF5P21180HR6
2110-
-2170 MHz, 38 W AVG., 28 V
2 x W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFET
CASE 375D-
-05, STYLE 1
NI-
-1230
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
--0.5, +65
--0.5, +15
530
3.0
--65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 180 W CW
Case Temperature 71°C, 38 W CW
Symbol
R
θJC
0.31
0.33
Value
(1,2)
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF5P21180HR6
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
2 (Minimum)
M3 (Minimum)
C7 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 200
µAdc)
Gate Quiescent Voltage
(3)
(V
DS
= 28 Vdc, I
D
= 1600 mAdc)
Drain--Source On--Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(1)
(V
DS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
(1,2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.7
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
—
—
—
2.8
3.6
0.26
5
3.5
—
0.3
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1600 mA, P
out
= 38 W Avg., f = 2157.5 MHz,
2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset. IM3
measured in 3.84 MHz Bandwidth @
±10
MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push--pull configuration.
G
ps
η
D
IM3
ACPR
IRL
12.5
23
—
—
—
14
25.5
--37.5
--41
--14
—
—
--35
--38
--9
dB
%
dBc
dBc
dB
MRF5P21180HR6
2
RF Device Data
Freescale Semiconductor
V
BIAS
R1
R6
+
C23
C13
R2
C8
Z15
C11
C5
Z11
Z3
C1
Z5
Z7
Z25
Z9
Z13
Z24
Z17
+
C9
C16
+
C18
+
C19
+ V
SUPPLY
C20
Z19
C4
RF
INPUT
Z1
Z2
DUT
Z21
Z22
RF
OUTPUT
Z4
C2
V
BIAS
R4
R5
+
C24
Z6
Z8
Z26
Z10
Z14
R3
Z12
Z23
Z18
C3
Z20
Z16
C14
C12
C6
C7
+
C10
+
C17
+
C21
+ V
SUPPLY
C22
C15
Z1, Z22
Z2, Z21
Z3, Z20
Z4, Z19
Z5, Z6
Z7, Z8
Z9, Z10
1.000″ x 0.066″ Microstrip
0.760″ x 0.113″ Microstrip
0.068″ x 0.066″ Microstrip
1.672″ x 0.066″ Microstrip
0.318″ x 0.066″ Microstrip
0.284″ x 0.180″ Microstrip
0.094″ x 0.650″ Microstrip
Z11, Z12
Z13, Z14
Z15, Z16
Z17, Z18
Z23, Z24
Z25, Z26
PCB
1.030″ x 0.035″ Microstrip
0.083″ x 0.650″ Microstrip
0.550″ x 0.058″ Microstrip
0.353″ x 0.066″ Microstrip
0.417″ x 0.650″ Microstrip
0.161″ x 0.650″ Microstrip
Taconic RF--35, 0.030″,
ε
r
= 3.5
Figure 1. MRF5P21180HR6 Test Circuit Schematic
Table 5. MRF5P21180HR6 Test Circuit Component Designations and Values
Part
C1, C2, C3, C4
C5, C6, C7, C8
C9, C10
C11, C12
C13, C14, C15, C16
C17, C18, C19, C20,
C21, C22
C23, C24
R1, R2, R3, R4
R5, R6
Description
30 pF Chip Capacitors
5.6 pF Chip Capacitors
10
µF
Tantalum Capacitors
1000 pF Chip Capacitors
0.1
µF
Chip Capacitors
22
µF
Tantalum Capacitors
1.0
µF
Tantalum Capacitors
10
Ω,
1/4 W Chip Resistors
1.0 kΩ, 1/4 W Chip Resistor
Part Number
ATC100B300JT500XT
ATC100B5R6JT500XT
T495X106K035AT
ATC100B102JT500XT
CDR33BX104AKYS
T491X226K035AT
T491C105M050AT
CRCW120610R0FKEA
CRCW12061001FKEA
ATC
ATC
Kemet
ATC
Kemet
Kemet
Kemet
Vishay
Vishay
Manufacturer
MRF5P21180HR6
RF Device Data
Freescale Semiconductor
3
C23
V
GG
R6
R1
C13 C11
C16 C18 C19
R2
C5
C8
C9
C20
V
DD
C1
CUT OUT AREA
C4
C2
C3
C22
C7
C10
V
DD
V
GG
R5
R4 C24
R3
C6
C14 C12
C15 C17 C21
MRF5P21180
Rev 5
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5P21180HR6 Test Circuit Component Layout
MRF5P21180HR6
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
--10
--15
--20
--25
--30
--35
60
15
14
13
G ps , POWER GAIN (dB)
12
11
10
9
8
7
6
5
2080
IM3
ACPR
IRL
G
ps
η
D
40
35
30
V
DD
= 28 Vdc, P
out
= 38 W (Avg.), I
DQ
= 1600 mA 25
2--Carrier W--CDMA, 10 MHz Carrier Spacing
20
3.84 MHz Channel Bandwidth
--20
PAR = 8.5 dB @ 0.01% Probability (CCDF)
--25
--30
--35
--40
2120
2140
2160
2180
--45
2200
2100
f, FREQUENCY (MHz)
Figure 3. 2-
-Carrier W-
-CDMA Broadband Performance
15
I
DQ
= 2400 mA
G ps , POWER GAIN (dB)
14.5
2000 mA
1600 mA
1200 mA
13.5
800 mA
13
12.5
20
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurement, 10 MHz Tone Spacing
40
60
80
100
200
300
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
--20
--25
--30
--35
--40
1200 mA
--45
1600 mA
--50
20
40
80 100
200
300
P
out
, OUTPUT POWER (WATTS) PEP
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurement, 10 MHz Tone Spacing
I
DQ
= 800 mA
2400 mA
2000 mA
14
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two-
-Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
--20
--25
--30
--35
--40
--45
7th Order
--50
--55
--60
0.1
V
DD
= 28 Vdc, P
out
= 170 W (PEP), I
DQ
= 1600 mA
Two--Tone Measurements
(f1+f2)/2 = Center Frequency of 2140 MHz
1
TWO--TONE SPACING (MHz)
10
20 30
5th Order
3rd Order
Pout , OUTPUT POWER (dBm)
58
56
P3dB = 53.72 dBm (236 W)
54
P1dB = 52.99 dBm (199 W)
52
50
48
46
44
42
30
32
34
V
DD
= 28 Vdc, I
DQ
= 1600 mA
Pulsed CW, 8
µsec(on),
1 msec (off)
f = 2140 MHz
36
38
40
42
Actual
Ideal
P
in
, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
IRL, INPUT RETURN LOSS (dB)
MRF5P21180HR6
RF Device Data
Freescale Semiconductor
5
FPGA/CPLD
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