VS-10CTQ150SPbF, VS-10CTQ150-1PbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 5 A
VS-10CTQ150SPbF
VS-10CTQ150-1PbF
FEATURES
• 175 °C T
J
operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Base
common
cathode
2
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
D
2
PAK
TO-262
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
D
2
PAK, TO-262
2x5A
150 V
0.93 V
7 mA at 125 °C
175 °C
Common cathode
5 mJ
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
5 A
pk
, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
10
150
620
0.73
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-10CTQ150SPbF
VS-10CTQ150-1PbF
150
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current, see fig. 5
per leg
per device
SYMBOL
I
F(AV)
I
FSM
E
AS
I
AR
TEST CONDITIONS
50 % duty cycle at T
C
= 155 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
T
J
= 25 °C, I
AS
= 1 A, L = 10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
5
10
620
115
5
1
A
mJ
A
UNITS
A
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
Revision: 20-May-14
Document Number: 94116
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10CTQ150SPbF, VS-10CTQ150-1PbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop per leg
See fig. 1
SYMBOL
5A
V
FM (1)
10 A
5A
10 A
Maximum reverse leakage current per leg
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.93
1.10
0.73
0.86
0.05
7
0.468
28
200
8.0
10 000
mA
V
m
pF
nH
V/μs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink (only for TO-220)
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style D
2
PAK
Case style TO-262
SYMBOL
T
J
, T
Stg
TEST CONDITIONS
VALUES
-55 to +175
3.50
R
thJC
DC operation
1.75
R
thCS
Mounting surface, smooth and greased
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
10CTQ150S
10CTQ150-1
I
F
- Instantaneous Forward Current (A)
100
100
I
R
- Reverse Current (mA)
10
1
T
J
= 125 °C
0.1
0.01
0.001
0.0001
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
0
25
50
75
100
T
J
= 175 °C
T
J
= 150 °C
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
125
150
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
Revision: 20-May-14
Document Number: 94116
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10CTQ150SPbF, VS-10CTQ150-1PbF
www.vishay.com
Vishay Semiconductors
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
20
40
60
80
100
120
140
160
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.001
0.00001
P
DM
t
1
t
2
0.1
0.01
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
10
100
0.0001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
180
5
DC
Allowable Case Temperature (°C)
170
160
150
140
130
See note (1)
120
0
2
4
Square wave (D = 0.50)
80 % rated V
R
applied
Average Power Loss (W)
4
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
3
2
DC
1
0
6
8
0
1
2
3
4
5
6
7
8
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Revision: 20-May-14
Document Number: 94116
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10CTQ150SPbF, VS-10CTQ150-1PbF
www.vishay.com
Vishay Semiconductors
1000
At any rated load condition and
with rated V
RRM
applied
following surge
I
FSM
- Non-Repetitive Surge Current (A)
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 10 V
Revision: 20-May-14
Document Number: 94116
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10CTQ150SPbF, VS-10CTQ150-1PbF
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
10
2
C
3
T
4
Q
5
150
6
S
7
TRL PbF
8
9
Vishay Semiconductors product
Current rating (10 A)
Circuit configuration: C = common cathode
T = TO-220
Schottky “Q” series
Voltage rating (150 = 150 V)
S = D
2
PAK
-1 = TO-262
None = tube (50 pieces)
TRL = tape and reel (left oriented - for D
2
PAK only)
TRR = tape and reel (right oriented - for D
2
PAK only)
9
-
PbF = lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95014
www.vishay.com/doc?95008
www.vishay.com/doc?95032
Revision: 20-May-14
Document Number: 94116
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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