d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 63918
S12-1138-Rev. A, 21-May-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA448DJ
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 12.4 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 2.5 V, I
D
= 11.8 A
V
GS
= 1.8 V, I
D
= 10.8 A
V
GS
= 1.5 V, I
D
= 3 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 10 A, V
GS
= 0 V
0.8
8
1
4.5
3.5
T
C
= 25 °C
12
c
30
1.2
16
3
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 1
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
V
DD
= 10 V, R
L
= 1
I
D
10 A, V
GEN
= 8 V, R
g
= 1
f = 1 MHz
0.6
V
DS
= 10 V, V
GS
= 8 V, I
D
= 12.4 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 12.4 A
V
DS
= 1 V, V
GS
= 0 V, f = 1 MHz
1380
190
75
23
13
2.1
1.4
3.3
7
10
27
6
8
13
30
7
6.6
14
20
41
12
16
20
45
14
ns
35
20
nC
pF
g
fs
V
DS
= 10 V, I
D
= 12.4 A
12
0.0125
0.0138
0.0160
0.0180
70
0.0150
0.0166
0.0200
0.0324
S
0.4
20
21
-3
1
± 100
1
10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 63918
S12-1138-Rev. A, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA448DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
V
GS
= 5 V thru 2 V
24
I
D
- Drain Current (A)
V
GS
= 1.5 V
10
8
I
D
- Drain Current (A)
18
6
T
C
= 25
°C
4
12
6
V
GS
= 1 V
0
0
0.5
1
1.5
V
DS
- Drain-to-Source Voltage (V)
2
2
T
C
= 125
°C
T
C
= - 55
°C
1.5
0
0
0.3
0.6
0.9
1.2
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.030
Transfer Characteristics
1800
C
iss
R
DS(on)
- On-Resistance (Ω)
0.024
C - Capacitance (pF)
1350
V
GS
= 1.5 V
0.018
V
GS
= 1.8 V
V
GS
= 2.5 V
0.012
V
GS
= 4.5 V
900
450
C
oss
C
rss
0
0.006
0
6
12
18
I
D
- Drain Current (A)
24
30
0
5
10
15
V
DS
- Drain-to-Source Voltage (V)
20
On-Resistance vs. Drain Current and Gate Voltage
8
I
D
= 12.4 A
6
V
DS
= 10 V
4
V
DS
= 5 V
2
V
DS
= 16 V
R
DS(on)
- On-Resistance (Normalized)
I
D
= 12.4 A
1.4
V
GS
- Gate-to-Source Voltage (V)
1.6
Capacitance
V
GS
= 4.5 V
V
GS
= 2.5 V
1.1
0.9
0
0
5
10
15
20
Q
g
- Total Gate Charge (nC)
25
0.6
- 50
- 25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63918
S12-1138-Rev. A, 21-May-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA448DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.030
I
D
= 12.4 A
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
10
T
J
= 150
°C
0.024
T
J
= 125
°C
0.018
1
T
J
= 25
°C
0.012
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
1.2
0.006
0
1
2
3
4
V
GS
- Gate-to-Source Voltage (V)
5
Soure-Drain Diode Forward Voltage
0.8
On-Resistance vs. Gate-to-Source Voltage
30
I
D
= 250 μA
25
0.6
20
V
GS(th)
(V)
Power (W)
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
0.4
15
10
0.2
5
0
- 50
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
100 μs
1 ms
1
10 ms
100 ms
1s
10 s
DC
T
A
= 25
°C
Single Pulse
BVDSS Limited
0.1
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 63918
S12-1138-Rev. A, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA448DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
35
28
I
D
- Drain Current (A)
21
14
Package Limited
7
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
Current Derating*
25
2.0
20
1.5
Power (W)
15
Power (W)
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
1.0
10
0.5
5
0
0.0
0
25
50
75
100
125
T
A
- Ambient Temperature (°C)
150
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63918
S12-1138-Rev. A, 21-May-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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