Freescale Semiconductor
Technical Data
Document Number: MRFG35002N6A
Rev. 2, 6/2009
RF Power Field Effect Transistor
LIFETIME BUY
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 6 Volts, I
DQ
=
65 mA, P
out
= 158 mWatts Avg., 3550 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 10 dB
Drain Efficiency — 26.5%
ACPR @ 5 MHz Offset — --42 dBc in 3.84 MHz Channel Bandwidth
•
1.5 Watts P1dB @ 3550 MHz, CW
Features
•
Excellent Phase Linearity and Group Delay Characteristics
•
High Gain, High Efficiency and High Linearity
•
RoHS Compliant
•
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35002N6AT1
3.5 GHz, 1.5 W, 6 V
POWER FET
GaAs PHEMT
CASE 466-
-03, STYLE 1
PLD-
-1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
V
DSS
V
GS
P
in
T
stg
T
ch
Value
8
--5
22
--65 to +150
175
Unit
Vdc
Vdc
dBm
°C
°C
Drain--Source Voltage
Gate--Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
(1)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(2)
13.7
Unit
°C/W
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2007--2009. All rights reserved.
MRFG35002N6AT1
1
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Gallium Arsenide PHEMT
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Saturated Drain Current
(V
DS
= 3.5 Vdc, V
GS
= 0 Vdc)
Off State Leakage Current
(V
GS
= --0.4 Vdc, V
DS
= 0 Vdc)
Off State Drain Current
(V
DS
= 6 Vdc, V
GS
= --2.5 Vdc)
Off State Current
(V
DS
= 28.5 Vdc, V
GS
= --2.5 Vdc)
Gate--Source Cut--off Voltage
(V
DS
= 3.5 Vdc, I
DS
= 8.7 mA)
Quiescent Gate Voltage
(V
DS
= 6 Vdc, I
D
= 65 mA)
Symbol
I
DSS
I
GSS
I
DSO
I
DSX
V
GS(th)
V
GS(Q)
Min
—
—
—
—
--1.2
--1.1
Typ
1.7
< 1.0
—
< 1.0
--0.95
--0.85
Max
—
100
600
9
--0.7
--0.6
Unit
Adc
μAdc
μAdc
mAdc
Vdc
Vdc
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 6 Vdc, I
DQ
= 65 mA, P
out
= 158 mW Avg., f = 3550 MHz, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
G
ps
η
D
ACPR
8.5
23
—
10
26.5
--42
—
—
--38
dB
%
dBc
Typical RF Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 6 Vdc, I
DQ
= 65 mA, f = 3550 MHz
P
out
@ 1 dB Compression Point, CW
P
1dB
—
1.5
—
W
MRFG35002N6AT1
2
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
LIFETIME BUY
C8
V
BIAS
C13
C12
C11
C10
C9
C7
C18
V
SUPPLY
C17
C19
C16
C15
C14
R1
C6
C5
C22
RF
INPUT
Z6
Z1
C1
C3
C4
Z2
Z3
Z4
Z5
Z7
Z8
Z9
Z10
C20
C21
Z11
Z12
Z13
C24
C23
Z14
RF
OUTPUT
Z1, Z14
Z2
Z3
Z4
Z5
Z6, Z11
Z7
0.044″ x 0.125″ Microstrip
0.044″ x 0.481″ Microstrip
0.044″ x 0.076″ Microstrip
0.468″ x 0.025″ Microstrip
0.468″ x 0.341″ Microstrip
0.015″ x 0.549″ Microstrip
0.031″ x 0.259″ Microstrip
Z8
Z9
Z10
Z12
Z13
PCB
0.420″ x 0.150″ Microstrip
0.150″ x 0.068″ Microstrip
0.290″ x 0.183″ Microstrip
0.044″ x 0.291″ Microstrip
0.044″ x 0.808″ Microstrip
Rogers 4350, 0.020″,
ε
r
= 3.5
Figure 1. MRFG35002N6A Test Circuit Schematic
Table 6. MRFG35002N6A Test Circuit Component Designations and Values
Part
Not used
1.2 pF Chip Capacitor
0.7 pF Chip Capacitor
5.6 pF Chip Capacitors
10 pF Chip Capacitors
100 pF Chip Capacitors
100 pF Chip Capacitors
1000 pF Chip Capacitors
0.01
μF
Chip Capacitors
39K pF Chip Capacitors
10
μF
Chip Capacitors
0.2 pF Chip Capacitor
100
Ω,
1/4 W Chip Resistor
08051J1R2BBS
08051J0R7BBS
08051J5R6BBS
ATC100A100JT500XT
ATC100A101JT500XT
ATC100B101JT500XT
ATC100B102JT50XT
ATC200B103KT50XT
ATC200B393KT50XT
GRM55DR61H106KA88B
08051J0R2BBS
CRCW12061000FKEA
AVX
AVX
AVX
ATC
ATC
ATC
ATC
ATC
ATC
Murata
AVX
Vishay
Description
13 pF Chip Capacitors
Part Number
ATC100A130JT500XT
Manufacturer
ATC
C1, C24
C2
C3
C4
C5, C6, C21, C22
C7, C20
C8, C19
C9, C18
C10, C17
C11, C16
C12, C15
C13, C14
C23
R1
MRFG35002N6AT1
RF Device Data
Freescale Semiconductor
3
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
LIFETIME BUY
C13
C12
C11
C10
C9
C8
C7
R1
C5
C6
C18
C17
C16
C15
C14
C19
C20
C22
C21
LIFETIME BUY
C1
C2
C3
C4
C23
C24
MRFG35002N6A Rev. 3
Figure 2. MRFG35002N6A Test Circuit Component Layout
MRFG35002N6AT1
4
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
TYPICAL CHARACTERISTICS
14
12
G
ps
, POWER GAIN (dB)
10
8
6
4
2
14
16
18
20
22
24
26
28
P
out
, OUTPUT POWER (dBm)
V
DD
= 6 Vdc, I
DQ
= 65 mA, f = 3550 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
G
ps
30
20
η
D
10
0
60
50
40
η
D
,
DRAIN EFFICIENCY (%)
LIFETIME BUY
Figure 3. Single-
-Channel W-
-CDMA Power Gain
and Drain Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
0
--10
--20
IRL
--30
--40
ACPR
--50
14
16
18
20
22
24
26
28
P
out
, OUTPUT POWER (dBm)
--25
--15
--20
V
DD
= 6 Vdc, I
DQ
= 65 mA, f = 3550 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
0
--5
--10
Figure 4. Single-
-Channel W-
-CDMA Adjacent
Channel Power Ratio and IRL versus Output Power
14
12
G
ps
, POWER GAIN (dB)
10
8
6
4
2
3450
V
DD
= 6 Vdc, I
DQ
= 65 mA, P
out
= 158 mW
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
G
ps
36
34
32
30
28
26
24
3650
η
D
,
DRAIN EFFICIENCY (%)
η
D
3500
3550
f, FREQUENCY (MHz)
3600
Figure 5. Single-
-Channel W-
-CDMA Power Gain
and Drain Efficiency versus Frequency
NOTE:
Data is generated from the test circuit shown.
MRFG35002N6AT1
RF Device Data
Freescale Semiconductor
5
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
IRL, INPUT RETURN LOSS (dB)
stm32/stm8
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