IRGR4607DPbF
IRGS4607DPbF
IRGB4607DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 600V
I
C
= 7.0A, T
C
=100°C
t
SC
5µs,
T
J(max)
= 175°C
V
CE(ON)
typ. = 1.75V
@ I
C
= 4.0A
G
E
C
C
C
C
E
G
C
G
E
E
C
G
IRGB4607DPbF
TO-220AB
n-channel
IRGR4607DPbF
D-Pak
IRGS4607DPbF
D
2
Pak
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
G
Gate
C
Collector
E
Emitter
Features
Low V
CE(ON)
and Switching Losses
5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive V
CE (ON)
Temperature Coefficient
Base part number
Package Type
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Standard Pack
Form
Quantity
Tube
75
Tape and Reel
2000
Tape and Reel Left
3000
Tape and Reel Right
3000
Tube
50
Tape and Reel Right
800
Tape and Reel Left
800
Tube
50
Orderable Part Number
IRGR4607DPbF
IRGR4607DTRPbF
IRGR4607DTRLPbF
IRGR4607DTRRPbF
IRGS4607DPBF
IRGS4607DTRRPbF
IRGS4607DTRLPbF
IRGB4607DPbF
Max.
600
11
7.0
12
16
8.0
5.0
16
±20
±30
58
29
-40 to +175
300 (0.063 in.
10 lbf·in (1.1 N·m)
Units
V
IRGR4607DPbF
D-Pak
IRGS4607DPbF
IRGB4607DPbF
Absolute Maximum Ratings
D
2
Pak
TO-220AB
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
A
V
W
°C
1
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November 14, 2014
IRGR/S/B4607DPbF
Parameter
Thermal Resistance, Junction-to-Case (IGBT)
Thermal Resistance, Junction-to-Case (Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface) (TO-220)
Thermal Resistance, Junction-to-Ambient (PCB Mount) (D-Pak)
Thermal Resistance, Junction-to-Ambient (PCB Mount) (D -Pak)
Thermal Resistance, Junction-to-Ambient (Socket Mount) (TO-220)
2
Thermal Resistance
R
JC
(IGBT)
R
JC
(Diode)
R
CS
R
JA
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
–––
Max.
2.6
8.3
–––
50
40
62
Units
°C/W
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)CES
/T
J
V
CE(on)
V
GE(th)
V
GE(th)
/T
J
gfe
I
CES
I
GES
V
F
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage Temperature Coeff.
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
Min.
600
—
—
—
—
4.0
—
—
—
—
—
—
—
Typ.
—
0.52
1.75
2.15
2.20
—
-19
2.2
0.50
100
—
1.7
1.5
Max.
—
—
Units
Conditions
V
V
GE
= 0V, I
C
= 100µA
V/°C V
GE
= 0V, I
C
= 100µA (25°C-175°C)
2.05
I
C
= 4.0A, V
GE
= 15V, T
J
= 25°C
V
—
I
C
= 4.0A, V
GE
= 15V, T
J
= 150°C
—
I
C
= 4.0A, V
GE
= 15V, T
J
= 175°C
6.5
V
V
CE
= V
GE
, I
C
= 100µA
—
mV/°C V
CE
= V
GE
, I
C
=100µA (25°C-175°C)
—
S
V
CE
= 50V, I
C
= 4.0A, PW = 20µs
25
µA V
GE
= 0V, V
CE
= 600V
—
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
±100
nA V
GE
= ±20V
2.3
V
I
F
= 4.0A
—
I
F
= 4.0A, T
J
= 175°C
2
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November 14, 2014
IRGR/S/B4607DPbF
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Parameter
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector Charge
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
5
—
—
—
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
9.0
3.0
4.0
140
62
202
27
15
120
10
220
92
312
24
27
81
14
250
20
7.1
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Units
nC
I
C
= 4.0A
V
GE
= 15V
V
CC
= 300V
Conditions
µJ
I
C
= 4.0A, V
CC
= 400V, V
GE
= 15V
R
G
= 100, T
J
= 25°C
ns
Energy losses include tail & diode
reverse recovery
µJ
I
C
= 4.0A, V
CC
= 400V, V
GE
= 15V
R
G
= 100, T
J
= 175°C
Energy losses include tail & diode
reverse recovery
ns
FULL SQUARE
—
7.4
48
5.1
—
—
—
—
V
GE
= 0V
pF V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 16A
V
CC
= 480V, Vp
≤
600V
V
GE
= +20V to 0V
V
CC
= 400V, Vp
≤
600V
µs
V = +15V to 0V
GE
µJ
ns
A
T
J
= 175°C
V
CC
= 400V, I
F
= 4.0A
V
GE
= 15V, Rg = 100
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V.
R
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994:
http://www.irf.com/technical-info/appnotes/an-994.pdf
3
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November 14, 2014
14
12
10
8
6
4
2
0
0.1
1
f , Frequency ( kHz )
10
IRGR/S/B4607DPbF
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 29W
Load Current ( A )
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
12
10
8
6
4
2
0
25
50
75
100
TC (°C)
125
150
175
70
60
50
Ptot (W)
IC (A)
40
30
20
10
0
25
50
75
100
TC (°C)
125
150
175
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
100
10
10µsec
100µsec
1msec
IC (A)
Fig. 3
- Power Dissipation vs.
Case Temperature
1
IC (A)
DC
10
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
0.01
1
10
VCE (V)
100
1
10
100
V CE (V)
1000
Fig. 4
- Forward SOA
T
C
= 25°C; T
J
≤
175°C; V
GE
= 15V
4
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© 2014 International Rectifier
Fig. 5
- Reverse Bias SOA
T
J
= 175°C; V
GE
= 20V
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November 14, 2014
16
IRGR/S/B4607DPbF
16
12
ICE (A)
8
ICE (A)
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
12
8
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
4
4
0
0
2
4
6
8
10
V CE (V)
0
0
2
4
6
8
10
V CE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20µs
16
14
12
10
ICE (A)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
30
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
IF (A)
25
20
15
10
5
0
175°C
25°C
-40°C
8
6
4
2
0
0
2
4
6
8
10
V CE (V)
0.0
0.5
1.0
1.5
2.0
VF (V)
2.5
3.0
3.5
4.0
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 20µs
6
5
4
V CE (V)
Fig. 9
- Typ. Diode Forward Voltage Drop
Characteristics
6
5
ICE = 8.0A
ICE = 4.0A
V CE (V)
4
3
2
1
0
ICE = 8.0A
ICE = 4.0A
ICE = 2.0A
ICE = 2.0A
3
2
1
0
5
10
V GE (V)
15
20
5
10
V GE (V)
15
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= -40°C
5
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© 2014 International Rectifier
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 25°C
Submit Datasheet Feedback
November 14, 2014
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