PD - 91619B
IRG4BC30K-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control,
t
sc
=10µs, @360V V
CE
(start), T
J
= 125°C,
V
GE
= 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
C
Short Circuit Rated
UltraFast IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
2.21V
@V
GE
= 15V, I
C
= 16A
n-channel
Benefits
• As a Freewheeling Diode we recommend our
HEXFRED
TM
ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBTs offer highest power
density motor controls possible
• This part replaces the IRGBC30K-S and
IRGBC30M-S devices
D
2
Pak
Max.
600
28
16
58
58
10
±20
260
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
t
sc
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)V
Weight
Typ.
–––
0.5
–––
1.44
Max.
1.2
–––
40
–––
Units
°C/W
g
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1
4/24/2000
IRG4BC30K-S
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
V
V
GE
= 0V, I
C
= 250µA
Emitter-to-Collector Breakdown Voltage
T
18
—
—
V
V
GE
= 0V, I
C
= 1.0A
V
(BR)ECS
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage —
0.54 —
V/°C V
GE
= 0V, I
C
= 1.0mA
— 2.21 —
I
C
= 14A
V
GE
= 15V
— 2.21 2.7
I
C
= 16A
V
CE(ON)
Collector-to-Emitter Saturation Voltage
V
— 2.88 —
I
C
= 28A
See Fig.2, 5
— 2.36 —
I
C
= 16A , T
J
= 150°C
V
GE(th)
Gate Threshold Voltage
3.0
—
6.0
V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage
—
-12
— mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance
U
5.4
8.1
—
S
V
CE
=
100V, I
C
= 16A
—
—
250
V
GE
= 0V, V
CE
= 600V
I
CES
I
GES
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
—
—
—
—
—
—
2.0
1100
±100
µA
nA
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
E
on
E
off
E
ts
L
E
C
ies
C
oes
C
res
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
67
11
25
26
28
130
120
0.36
0.51
0.87
—
25
29
190
190
1.2
0.26
0.36
0.62
7.5
920
110
27
Max. Units
Conditions
100
I
C
= 16A
16
nC
V
CC
= 400V
See Fig.8
37
V
GE
= 15V
—
—
T
J
= 25°C
ns
200
I
C
= 16A, V
CC
= 480V
170
V
GE
= 15V, R
G
= 23Ω
—
Energy losses include "tail"
—
mJ
See Fig. 9,10,14
1.3
—
µs
V
CC
= 400V, T
J
= 125°C
V
GE
= 15V, R
G
= 23Ω , V
CPK
< 500V
—
T
J
= 150°C,
—
I
C
= 16A, V
CC
= 480V
ns
—
V
GE
= 15V, R
G
= 23Ω
—
Energy losses include "tail"
—
mJ
See Fig. 11,14
—
T
J
= 25°C, V
GE
= 15V, R
G
= 23Ω
—
mJ
I
C
= 14A, V
CC
= 480V
—
Energy losses include "tail"
—
nH
Measured 5mm from package
—
V
GE
= 0V
—
pF
V
CC
= 30V
See Fig. 7
—
ƒ = 1.0MHz
Details of note
Q
through
V
are on the last page
2
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IRG4BC30K-S
6.0
F o r b o th :
T ria n g u la r w a ve :
5.0
Load Current ( A )
D uty c yc le: 50%
TJ = 125° C
Ts ink = 90°C
55°C
G ate drive as spec ified
P o w e r D is s ip a tio n = 1 .8 W
C la m p vo l ta g e :
8 0 % o f ra te d
4.0
S q u a re wave :
3.0
6 0 % o f ra te d
v o lta g e
2.0
1.0
Id e al d io de s
0.0
0.1
1
10
A
100
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
T
J
= 150
o
C
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
T
J
= 25
o
C
T
J
= 150
o
C
10
10
T
J
= 25
o
C
1
1
0.1
1
V
= 15V
20µs PULSE WIDTH
GE
10
0.1
5
10
V
= 50V
5µs PULSE WIDTH
CC
15
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4BC30K-S
30
4.0
Maximum DC Collector Current(A)
25
20
V
CE
, Collector-to-Emitter Voltage(V)
V
= 15V
80 us PULSE WIDTH
GE
I
C
= 32 A
3.0
15
I
C
= 16 A
2.0
10
I
C
=
8.0A
8A
5
0
25
50
75
100
125
150
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
Junction Temperature (
( C)
T
J
J
,
, Junction Temperature
°C
°
)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
P
DM
t
1
t
2
1
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC30K-S
1500
1200
V
GE
, Gate-to-Emitter Voltage (V)
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 16A
16
C, Capacitance (pF)
900
Cies
12
600
8
300
C
oes
C
res
4
0
1
10
100
0
0
20
40
60
80
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.5
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 16A
10
R
G
= Ohm
23
Ω
V
GE
= 15V
V
CC
= 480V
I
C
=
32
A
I
C
=
16
A
1.0
1
I
C
=
8.0A
8
A
0.5
0
10
20
30
40
50
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
, Gate Resistance (Ohm)
Ω
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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