Si1443EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
4
S
G
Lot Traceability
and Date Code
Part # Code
R
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T
J
, T
stg
P
D
I
DM
I
S
I
D
Symbol
V
DS
V
GS
Limit
- 30
± 12
- 4
a
- 4
a
- 4
a, b, c
- 3.4
b, c
- 15
- 2.3
- 1.3
b, c
2.8
1.8
1.6
b, c
1
b, c
- 55 to 150
260
°C
W
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 67849
S12-0980-Rev. B, 30-Apr-12
For technical support, please contact:
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1
t
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
60
34
Maximum
80
45
Unit
°C/W
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si1443EDH
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Symbol
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
Test Conditions
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-
5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 4.3 A
V
GS
= - 4.5 V, I
D
= - 4 A
V
GS
= - 2.5 V, I
D
= - 3.5 A
V
DS
= - 15 V, I
D
= - 4.3 A
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 4.3 A
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 4.3 A
f = 1 MHz
V
DD
= - 15 V, R
L
= 4.4
I
D
- 3.4 A, V
GEN
= - 4.5 V, R
g
= 1
Min.
- 30
Typ.
Max.
Unit
V
- 22
2.6
- 0.6
- 1.5
± 20
±1
-1
- 10
- 15
0.043
0.049
0.067
14
18.5
8.6
1.7
2.5
0.09
0.45
125
220
1115
435
40
0.90
188
330
1673
653
60
98
2700
630
- 2.3
- 15
- 0.85
14
7
9
5
- 1.2
21
14
28
13
0.054
0.062
0.085
mV/°C
V
µA
A
S
Drain-Source On-State Resistance
a
Forward Transconductance
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
nC
k
ns
V
DD
= - 15 V, R
L
= 4.4
I
D
- 3.4 A, V
GEN
= - 10 V, R
g
= 1
64
1800
420
T
C
= 25 °C
I
S
= - 3.4 A, V
GS
= 0 V
A
V
ns
nC
ns
I
F
= - 3.4 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical support, please contact:
pmostechsupport@vishay.com
Document Number: 67849
S12-0980-Rev. B, 30-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si1443EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.025
T
J
= 25
°C
10
-2
10
-3
0.020
I
GSS
- Gate Current (mA)
I
GSS
- Gate Current (A)
10
-4
10
-5
10
-6
T
J
= 25
°C
T
J
= 150
°C
0.015
0.010
10
-7
0.005
10
-8
0.000
0
3
6
9
12
V
GS
- Gate-Source Voltage (V)
15
10
-9
0
3
6
9
12
V
GS
- Gate-to-Source Voltage (V)
15
Gate Current vs. Gate-Source Voltage
15
V
GS
= 10 V thru 3 V
12
I
D
- Drain Current (A)
I
D
- Drain Current (A)
4
5
Gate Current vs. Gate-Source Voltage
9
V
GS
= 2 V
3
6
2
T
C
= 25
°C
1
T
C
= 125
°C
T
C
= - 55
°C
0
0.5
1
1.5
V
GS
- Gate-to-Source Voltage (V)
2
3
0
0
0.5
1
1.5
V
DS
- Drain-to-Source Voltage (V)
2
0
Output Characteristics
0.10
10
Transfer Characteristics
I
D
= 4.3 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 7.5 V
6
V
DS
= 15 V
4
V
DS
= 24 V
R
DS(on)
- On-Resistance (Ω)
0.08
V
GS
= 2.5 V
0.06
V
GS
= 4.5 V
0.04
V
GS
= 10 V
2
0.02
0
3
6
9
I
D
- Drain Current (A)
12
15
0
0
5
10
15
Q
g
- Total Gate Charge (nC)
20
On-Resistance vs. Drain Current
Gate Charge
Document Number: 67849
S12-0980-Rev. B, 30-Apr-12
For technical support, please contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si1443EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.65
R
DS(on)
- On-Resistance (Normalized)
I
D
= 4.3 A
1.40
V
GS
= 10 V
I
S
- Source Current (A)
10
T
J
= 150
°C
1.15
1
T
J
= 25
°C
0.90
0.65
- 50
V
GS
= 4.5 V
- 25
0
25
50
75
100
125
150
0.1
0.0
0.2
T
J
- Junction Temperature (°C)
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
1.2
On-Resistance vs. Junction Temperature
0.15
I
D
= 4.3 A
R
DS(on)
- On-Resistance (Ω)
0.12
0.8
0.95
Source-Drain Diode Forward Voltage
V
GS(th)
(V)
0.09
T
J
= 125
°C
0.06
T
J
= 25
°C
0.65
I
D
= 250 μA
0.5
0.03
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
0.35
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
30
100
Threshold Voltage
Limited by R
DS(on)
*
24
10
I
D
- Drain Current (A)
100 μs
Power (W)
18
1
1 ms
10 ms
12
0.1
6
T
C
= 25
°C
Single Pulse
BVDSS Limited
100 ms
1 s, 10 s
DC
0
0.001
0.01
0.1
Time (s)
1
10
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
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For technical support, please contact:
pmostechsupport@vishay.com
Document Number: 67849
S12-0980-Rev. B, 30-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si1443EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
7.00
5.25
I
D
- Drain Current (A)
Package Limited
3.50
1.75
0.00
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
Current Derating*
4
1.2
3
Power (W)
Power (W)
0.9
2
0.6
1
0.3
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67849
S12-0980-Rev. B, 30-Apr-12
For technical support, please contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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