Advanced Technical Information
MKI 50-12F7
IGBT Modules
H Bridge
Short Circuit SOA Capability
Square RBSOA
13
1
2
9
10
16
14
3
4
17
11
12
I
C25
= 65 A
= 1200 V
V
CES
V
CE(sat) typ.
= 3.2 V
MKI
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
P
tot
T
C
= 25°C
T
C
= 80°C
V
GE
=
±
15 V; R
G
= 13
Ω;
T
VJ
= 125°C
RBSOA; clamped inductive load; L = 100 µH
V
CE
= 900 V; V
GE
=
±
15 V; R
G
= 13
Ω;
T
VJ
= 125°C
SCSOA; non-repetitive
T
C
= 25°C
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
1200
±
20
65
45
100
V
CES
10
350
V
V
A
A
A
µs
W
Features
• Fast NPT IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant circuits
• HiPerFRED
TM
diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
- UL registered, E 72873
Typical Applications
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
3.2
3.8
4.5
T
VJ
= 25°C
T
VJ
= 125°C
2.5
500
130
60
360
30
6.0
2.5
3.3
600
3.8
6.5
0.7
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
nC
0.35 K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 2 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V;
V
CE
= 0 V; V
GE
=
±
20 V
- motor control
. DC motor amature winding
. DC motor excitation winding
. synchronous motor excitation winding
- supply of transformer primary winding
. power supplies
. welding
. X-ray
. battery charger
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 50 A
V
GE
= ±15 V; R
G
= 13
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 50 A
(per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1-2
414
Advanced Technical Information
MKI 50-12F7
Diodes
Symbol
I
F25
I
F80
Conditions
T
C
= 25°C
T
C
= 80°C
Maximum Ratings
110
70
A
A
Equivalent Circuits for Simulation
Conduction
Symbol
V
F
I
RM
t
rr
R
thJC
Module
Symbol
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Symbol
R
pin-chip
d
S
d
A
R
thCH
Weight
Conditions
I
F
= 50 A; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 50 A; di
F
/dt = -500 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
(per diode)
Characteristic Values
min.
typ. max.
2.2
1.6
40
200
2.6
V
V
A
ns
0.61 K/W
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 2.05 V; R
0
= 35 m
Ω
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.3 V; R
0
= 6 m
Ω
Thermal Response
Conditions
operating
Maximum Ratings
-40...+125
-40...+150
-40...+125
2500
2.7 - 3.3
°C
°C
°C
V~
Nm
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M5)
Conditions
IGBT (typ.)
C
th1
= 0.22 J/K; R
th1
= 0.26 K/W
C
th2
= 1.74 J/K; R
th2
= 0.09 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.151 J/K; R
th1
= 0.483 K/W
C
th2
= 1.003 J/K; R
th2
= 0.127 K/W
Characteristic Values
min.
typ. max.
5
mΩ
mm
mm
0.02
180
K/W
g
Creepage distance on surface
Strike distance in air
with heatsink compound
6
6
Dimensions in mm (1 mm = 0.0394")
pins 5, 6, 7, 8 and 15 for MWI only
414
© 2004 IXYS All rights reserved
2-2
stm32/stm8
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