Bipolar Transistors - BJT TRANS GP TAPE-11
参数名称 | 属性值 |
产品种类 Product Category | Bipolar Transistors - BJT |
制造商 Manufacturer | NXP(恩智浦) |
RoHS | Details |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | SOT-323-3 |
Transistor Polarity | PNP |
Configuration | Single |
Collector- Emitter Voltage VCEO Max | 50 V |
Collector- Base Voltage VCBO | 60 V |
Emitter- Base Voltage VEBO | 5 V |
Maximum DC Collector Current | 0.5 A |
Gain Bandwidth Product fT | 120 MHz |
最大工作温度 Maximum Operating Temperature | + 150 C |
DC Collector/Base Gain hfe Min | 120 |
DC Current Gain hFE Max | 120 at 150 mA at 10 V |
高度 Height | 1 mm |
长度 Length | 2.2 mm |
最小工作温度 Minimum Operating Temperature | - 65 C |
系列 Packaging | Reel |
Pd-功率耗散 Pd - Power Dissipation | 200 mW |
工厂包装数量 Factory Pack Quantity | 10000 |
宽度 Width | 1.35 mm |
2PB1219AR135 | 2PB1219AQ115 | |
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描述 | Bipolar Transistors - BJT TRANS GP TAPE-11 | Bipolar Transistors - BJT TRANS GP TAPE-7 |
产品种类 Product Category |
Bipolar Transistors - BJT | Bipolar Transistors - BJT |
制造商 Manufacturer |
NXP(恩智浦) | NXP(恩智浦) |
RoHS | Details | Details |
安装风格 Mounting Style |
SMD/SMT | SMD/SMT |
封装 / 箱体 Package / Case |
SOT-323-3 | SOT-323-3 |
Transistor Polarity | PNP | PNP |
Configuration | Single | Single |
Collector- Emitter Voltage VCEO Max | 50 V | 50 V |
Collector- Base Voltage VCBO | 60 V | 60 V |
Emitter- Base Voltage VEBO | 5 V | 5 V |
Maximum DC Collector Current | 0.5 A | 0.5 A |
Gain Bandwidth Product fT | 120 MHz | 100 MHz |
最大工作温度 Maximum Operating Temperature |
+ 150 C | + 150 C |
DC Collector/Base Gain hfe Min | 120 | 85 at 150 mA at 10 V, 40 at 500 mA at 10 V |
DC Current Gain hFE Max | 120 at 150 mA at 10 V | 85 at 150 mA at 10 V |
高度 Height |
1 mm | 1 mm |
长度 Length |
2.2 mm | 2.2 mm |
最小工作温度 Minimum Operating Temperature |
- 65 C | - 65 C |
系列 Packaging |
Reel | Reel |
Pd-功率耗散 Pd - Power Dissipation |
200 mW | 200 mW |
工厂包装数量 Factory Pack Quantity |
10000 | 3000 |
宽度 Width |
1.35 mm | 1.35 mm |
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