MJE802
NPN power Darlington transistor
Features
■
■
■
.
Good h
FE
linearity
High f
T
frequency
Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
■
Linear and switching industrial equipment
Description
The device is manufactured in planar technology
with “base island” layout and monolithic
Darlington configuration.
Figure 1.
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P
SOT-32
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d
3
2
1
s)
t(
Internal schematic diagram
R
1
typ. = 15 kΩ
R
2
typ. = 100
Ω
Table 1.
Device summary
Marking
MJE802
Package
SOT-32
Packaging
Tube
Order code
MJE802
August 2009
Doc ID 4958 Rev 4
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www.st.com
8
Absolute maximum ratings
MJE802
1
Absolute maximum ratings
Table 2.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
TOT
T
STG
T
J
Absolute maximum ratings
Parameter
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current
Base current
Total dissipation at T
case
= 25 °C
Storage temperature
Max. operating junction temperature
5
4
8
0.1
40
V
A
Value
80
Unit
V
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d
o
-65 to 150
150
uc
s)
t(
A
W
°C
°C
A
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Doc ID 4958 Rev 4
MJE802
Electrical characteristics
2
Electrical characteristics
T
case
= 25 °C; unless otherwise specified.
Table 3.
Symbol
I
CBO
I
CEO
I
EBO
V
CEO(sus)(1)
V
CE(sat)(1)
Electrical characteristics
Parameter
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Collector-emitter
sustaining voltage (I
B
= 0)
Test conditions
V
CB
= 80 V
V
CB
= 80 V, T
C
= 125 °C
V
CE
= 80 V
V
EB
= 5 V
I
C
= 50 mA
80
Min.
Typ.
-
-
-
Max.
0.1
0.5
0.1
2
Unit
mA
mA
mA
V
Collector-emitter saturation I
C
= 1.5 A
voltage
I
C
= 4 A
Base-emitter on voltage
I
C
= 1.5 A
I
C
= 4 A
DC current gain
I
B
= 30 mA
V
BE(on)
h
FE(1)
h
fe
Small signal current gain
1. Pulse test: pulse duration 300
≤
µs, duty cycle
≤
2 %.
2.1
Typical characteristic (curves)
Figure 2.
DC current gain (V
CE
= 3 V)
Figure 3.
DC current gain (V
CE
= 5 V)
b
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et
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O
-
I
C
= 1.5 A_
I
C
= 4 A_
_
I
C
= 1.5 A_
f = 1 MHz
so
b
te
le
I
B
= 40 mA
V
CE
= 3 V
V
CE
= 3 V
ro
P
750
100
1
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d
-
-
-
-
-
-
-
s)
t(
3
2.5
V
2.5
V
3
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
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Electrical characteristics
Figure 4.
Collector-emitter saturation
voltage
Figure 5.
MJE802
Base-emitter saturation
voltage
Figure 6.
Base-emitter on voltage
Figure 7.
Resistive load switching time
(on)
Figure 8.
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Resistive load switching time
(off)
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Doc ID 4958 Rev 4
MJE802
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
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