Freescale Semiconductor
Technical Data
Document Number: MW7IC915N
Rev. 2, 12/2013
RF LDMOS Wideband Integrated
Power Amplifier
The MW7IC915N wideband integrated circuit is designed with on--chip
matching that makes it usable from 698 to 960 MHz. This multi--stage
structure is rated for 26 to 32 volt operation and covers all typical cellular base
station modulation formats.
Driver Application — 900 MHz
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQ1
= 52 mA, I
DQ2
= 134 mA, P
out
= 1.6 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF.
Frequency
865 MHz
880 MHz
895 MHz
G
ps
(dB)
37.9
38.0
37.8
PAE
(%)
17.1
17.4
17.5
ACPR
(dBc)
--50.4
--50.6
--51.3
MW7IC915NT1
728-
-960 MHz, 1.6 W AVG., 28 V
SINGLE W-
-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, P
out
= 23.5 Watts CW
(3 dB Input Overdrive from Rated P
out
)
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 30 to 41.5 dBm CW
P
out
.
Typical P
out
@ 1 dB Compression Point
≃
15.5 Watts CW
Driver Application — 700 MHz
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQ1
= 50 mA, I
DQ2
= 144 mA, P
out
= 1.6 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF.
Frequency
728 MHz
748 MHz
768 MHz
G
ps
(dB)
37.8
37.8
37.7
PAE
(%)
17.2
17.3
17.3
ACPR
(dBc)
--49.5
--50.5
--51.4
PQFN 8
8
PLASTIC
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
Integrated ESD Protection
In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 13--inch Reel.
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
Freescale Semiconductor, Inc., 2009, 2013. All rights reserved.
MW7IC915NT1
1
RF Device Data
Freescale Semiconductor, Inc.
V
GS1
V
GS2
V
GS1
NC
V
GS2
NC
NC
NC
18
17
16
15
14
13
Quiescent Current
Temperature Compensation
(1)
NC
GND
RF
in
RF
in
GND
NC
RF
in
RF
out
/V
DS2
1
2
3
4
5
6
24 23 22 21 20 19
7 8 9 10 11 12
NC
V
DS1
V
DS1
NC
NC
NC
RF
out
/V
DS2
RF
out
/V
DS2
RF
out
/V
DS2
RF
out
/V
DS2
RF
out
/V
DS2
RF
out
/V
DS2
V
DS1
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Operating Junction Temperature
(1)
Input Power
Symbol
V
DSS
V
GS
V
DD
T
stg
T
J
P
in
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
17
Unit
Vdc
Vdc
Vdc
C
C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
W--CDMA Application
(Case Temperature 82C, P
out
= 1.6 W CW)
Stage 1, 28 Vdc, I
DQ1
= 60 mA
Stage 2, 28 Vdc, I
DQ2
= 130 mA
Symbol
R
JC
7.5
3.2
Value
(1,2)
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1B
A
III
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
MW7IC915NT1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 1 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 9
Adc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 52 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 52 mAdc, Measured in Functional Test)
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 2 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 36
Adc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 134 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 134 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3.6 Adc)
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1
—
3.8
0.1
2
2.9
4.6
0.3
3
—
5.3
0.8
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
Adc
Adc
Adc
V
GS(th)
V
GS(Q)
V
GG(Q)
1
—
5.5
2
3
6.3
3
—
7
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
Adc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 52 mA, I
DQ2
= 134 mA, P
out
= 1.6 W Avg.,
f = 880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @
5
MHz Offset.
Power Gain
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
G
ps
PAE
ACPR
IRL
35.0
15.0
—
—
38.0
17.4
--50.6
--22
41.0
—
--47.0
--9
dB
%
dBc
dB
Typical Performance over Frequency
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 52 mA, I
DQ2
= 134 mA, P
out
= 1.6 W
Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @
5
MHz Offset.
Frequency
865 MHz
880 MHz
895 MHz
1. Part internally input matched.
(continued)
G
ps
(dB)
37.9
38.0
37.8
PAE
(%)
17.1
17.4
17.5
ACPR
(dBc)
--50.4
--50.6
--51.3
IRL
(dB)
--21
--22
--22
MW7IC915NT1
RF Device Data
Freescale Semiconductor, Inc.
3
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
(V
DD
= 28 Vdc, I
DQ1
= 75 mA, I
DQ2
= 100 mA)
IMD Symmetry @ 16 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Quiescent Current Accuracy over Temperature
(1)
with 2 k Gate Feed Resistors (--30 to 85C)
Gain Flatness in 30 MHz Bandwidth @ P
out
= 1.6 W Avg.
Gain Variation over Temperature
(--30C to +85C)
Output Power Variation over Temperature
(--30C to +85C)
Stage 1
Stage 2
Symbol
P1dB
IMD
sym
Min
—
Typ
15.5
Max
—
Unit
W
MHz
—
45
—
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 52 mA, I
DQ2
= 134 mA, 865--895 MHz Bandwidth
VBW
res
I
QT
G
F
G
P1dB
—
—
—
—
—
—
180
0.10
0.12
0.1
0.041
0.004
—
—
—
—
—
—
MHz
%
dB
dB/C
dBm/C
Typical Performance — 700 MHz
(In Freescale 700 MHz Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 50 mA, I
DQ2
= 144 mA, P
out
=
1.6 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @
5
MHz Offset.
Frequency
728 MHz
748 MHz
768 MHz
G
ps
(dB)
37.8
37.8
37.7
PAE
(%)
17.2
17.3
17.3
ACPR
(dBc)
--49.5
--50.5
--51.4
IRL
(dB)
--23
--22
--22
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or
AN1987.
MW7IC915NT1
4
RF Device Data
Freescale Semiconductor, Inc.
V
G1
R1
V
G2
R2
C8
C10 C12
C19
C13
C7
C9
C11
C15
C17
V
D2
C1
C2
C3
C4
C14
C5
C6
MW7IC915N
Rev 3
C16
C18
V
D1
C20
Figure 3. MW7IC915NT1 Test Circuit Component Layout
Table 6. MW7IC915NT1 Test Circuit Component Designations and Values
Part
C1
C2, C5
C3
C4
C6, C11, C12, C13, C14
C7, C8
C9, C10
C15, C16
C17, C18
C19, C20
R1, R2
PCB
Description
1.8 pF Chip Capacitor
0.8 pF Chip Capacitors
6.2 pF Chip Capacitor
3.3 pF Chip Capacitor
47 pF Chip Capacitors
1
F
Chip Capacitors
0.1
F
Chip Capacitors
4.7
F
Chip Capacitors
10
F,
50 V Chip Capacitors
100
F,
50 V Electrolytic Capacitors
2 k, 1/4 W Resistors
0.020,
r
= 3.66
Part Number
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GRM31MR71H105KA88L
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GRM31CR71H475KA12L
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MCGPR50V107M8X11--RH
CRCW12062K00FKEA
RO4350B
Manufacturer
ATC
ATC
ATC
ATC
ATC
Murata
Murata
Murata
Murata
Multicomp
Vishay
Rogers
MW7IC915NT1
RF Device Data
Freescale Semiconductor, Inc.
5
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