VS-183NQ100PbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 180 A
FEATURES
Lug terminal
anode
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
Base
cathode
• Designed and qualified for industrial level
• UL approved file E222165
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
HALF-PAK (D-67)
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
Package
Circuit configuration
180 A
100 V
HALF-PAK (D-67)
Single
DESCRIPTION
The VS-183NQ.. high current Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in high current switching power supplies,
plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
180 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
180
100
22 000
0.73
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-183NQ100PbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 128 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 5.5 A, L = 1 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
VALUES
240
22 000
2500
15
1
mJ
A
A
UNITS
Revision: 08-May-17
Document Number: 94461
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-183NQ100PbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
180 A
Maximum forward voltage drop
See fig. 1
V
FM (1)
360 A
180 A
360 A
Maximum reverse leakage current
See fig. 2
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width = 500 μs
I
RM
(1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.91
1.23
0.73
0.9
4.5
60
4150
6.0
10 000
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
From top of terminal hole to mounting plane
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
minimum
maximum
Non-lubricated threads
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
-55 to 175
0.28
°C/W
0.05
30
1.06
3 (26.5)
4 (35.4)
3.4 (30)
5 (44.2)
HALF-PAK module
N·m
(lbf · in)
g
oz.
UNITS
°C
Mounting torque
Terminal torque
Case style
I
F
- Instantaneous Forward Current (A)
1000
1000
I
R
- Reverse Current (mA)
T
J
= 175 °C
100
10
1
0.1
T
J
= 175 °C
T
J
= 125 °C
100
10
T
J
= 125 °C
T
J
= 25 °C
0.01
0.001
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
10
94461_02
20
30
40
50
60
70
80
90
100
94461_01
V
FM
- Forward Voltage Drop (V)
V
R
- Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 08-May-17
Document Number: 94461
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-183NQ100PbF
www.vishay.com
10 000
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
1000
T
J
= 25 °C
100
0
94461_03
10 20 30 40 50 60 70 80 90 100 110
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
0.01
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.001
0.00001
94461_04
0.0001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Allowable Case Temperature (°C)
200
250
Average Power Loss (W)
180
160
140
120
100
80
See note (1)
60
0
50
100
150
200
250
300
Square wave (D = 0.50)
80 % rated V
R
applied
DC
200
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
150
100
DC
50
RMS limit
0
0
94461_06
50
100
150
200
250
300
350
94461_05
I
F(AV)
- Average Forward Current (A)
I
F(AV)
-
Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Revision: 08-May-17
Document Number: 94461
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-183NQ100PbF
www.vishay.com
I
FSM
- Non-Repetitive Surge Current (A)
100 000
At any rated load condition
and with rated V
RRM
applied
following surge
Vishay Semiconductors
10 000
1000
10
100
1000
10 000
94461_07
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
18
2
3
3
N
4
Q
5
100 PbF
6
7
Vishay Semiconductors product
Average current rating (x 10)
Product silicon identification
N = not isolated
Q = Schottky rectifier diode
Voltage rating (100 = 100 V)
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95020
Revision: 08-May-17
Document Number: 94461
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D-67 HALF-PAK
DIMENSIONS
in millimeters (inches)
24.4 (0.96)
13 (0.51)
17.5 (0.69)
16.5 (0.65)
5 (0.20)
4 (0.16)
30 ± 0.05
(1.2 ± 0.002)
5 (0.196) + 45°
Ø 7.3 ± 0.1 (0.29 ± 0.0039)
21 (0.82)
20 (0.78)
Ø 4.3
(Ø 0.169
- 0.1
0.0
- 0.004
)
0.000
¼" - 20 UNC
40 MAX. (1.58)
Document Number: 95020
Revision: 20-May-09
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
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