BCR142...
NPN Silicon Digital Transistor
•
Switching circuit, inverter, interface circuit,
driver circuit
•
Built in bias resistor (R
1
=22kΩ,
R
2
=47kΩ)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
BCR142
BCR142W
C
3
R
1
R
2
1
B
2
E
EHA07184
Type
BCR142
BCR142W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR142,
T
S
≤
102°C
BCR142W,
T
S
≤
124°C
Junction temperature
Storage temperature
Marking
WZs
WZs
1=B
1=B
Pin Configuration
2=E
2=E
3=C
3=C
-
-
-
-
-
-
Package
SOT23
SOT323
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
Value
50
50
60
10
100
200
250
Unit
V
mA
mW
T
j
T
stg
150
-65 ... 150
°C
1
2011-08-29
BCR142...
Thermal Resistance
Parameter
Junction - soldering point
1)
BCR142
BCR142W
Symbol
R
thJS
Value
≤
240
≤
105
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
50
I
C
= 100 µA,
I
B
= 0
Unit
V
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R
1
R
1
/
R
2
50
-
-
70
-
0.5
0.8
15
0.42
-
-
-
-
-
-
-
22
0.47
-
100
227
-
0.3
1.2
2.5
29
0.52
k
Ω
-
nA
µA
-
V
Collector-base cutoff current
V
CB
= 40 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 10 V,
I
C
= 0
DC current gain-
2)
I
C
= 5 mA,
V
CE
= 5 V
Collector-emitter saturation voltage
2)
I
C
= 10 mA,
I
B
= 0.5 mA
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
Input on voltage
I
C
= 2 mA,
V
CE
= 0.3 V
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2
Pulse
f
T
C
cb
-
-
150
3
-
-
MHz
pF
test: t < 300µs; D < 2%
2
2011-08-29
BCR142...
DC current gain
h
FE
=
ƒ
(I
C
)
V
CE
= 5V (common emitter configuration)
10
3
Collector-emitter saturation voltage
V
CEsat
=
ƒ
(I
C
),
I
C
/I
B
= 20
0.5
V
0.4
V
CEsat
h
FE
10
2
0.35
0.3
0.25
0.2
10
1
-40 °C
-25 °C
25 °C
85 °C
125 °C
-40 °C
-25 °C
25 °C
85 °C
125 °C
0.15
0.1
0.05
10
0 -4
10
10
-3
10
-2
A
10
-1
0
-3
10
10
-2
A
10
-1
I
C
I
C
Input on Voltage
V
i
(on)
=
ƒ
(I
C
)
V
CE
= 0.3V (common emitter configuration)
10
2
Input off voltage
V
i(off)
=
ƒ
(I
C
)
V
CE
= 5V (common emitter configuration)
10
1
V
V
V
i(on)
V
i(off)
10
1
-40 °C
-25 °C
25 °C
85 °C
125 °C
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
0
10
0
10
-1 -5
10
10
-4
10
-3
10
-2
A
10
-1
10
-1 -5
10
10
-4
10
-3
10
-2
A
10
-1
I
C
I
C
3
2011-08-29
BCR142...
Total power dissipation
P
tot
=
ƒ
(T
S
)
BCR142
300
mW
Total power dissipation
P
tot
=
ƒ
(T
S
)
BCR142W
300
mW
250
225
250
225
P
tot
175
150
125
100
75
50
25
0
0
15
30
45
60
75
90 105 120
°C
150
P
tot
200
200
175
150
125
100
75
50
25
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
Permissible Pulse Load
R
thJS
=
ƒ
(t
p
)
BCR142
10
3
K/W
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
BCR142
10
3
10
2
P
totmax
/
P
totDC
-
10
2
10
1
10
0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
1
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
4
2011-08-29
BCR142...
Permissible Puls Load
R
thJS
=
ƒ
(t
p
)
BCR142W
10
3
K/W
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
BCR142W
10
3
10
2
P
totmax
/
P
totDC
-
10
2
10
1
10
0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
1
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
5
2011-08-29
Microchip MCU
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