CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
FEATURES
B
6
C
5
E
4
• Isolation materials according to UL 94-VO
• Pollution degree
IEC 60664)
2
(DIN/VDE
0110/resp.
• Climatic classification 55/110/21 (IEC 60068
part 1)
• Low temperature coefficient of CTR
1
2
3
• CTR offered in 3 groups
• Rated
isolation
voltage
(RMS
V
IOWM
= 600 V
RMS
(848 V peak)
• Rated
recurring
V
IORM
= 600 V
RMS
• Rated
impulse
V
IOTM
= 6 kV
peak
peak
voltage
includes
DC)
A (+) C (-)
NC
V
D E
18537_5
voltage
(transient
(repetitive)
overvoltage)
17201_4
DESCRIPTION
The CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB,
CNY75GC consists of a phototransistor optically coupled to
a gallium arsenide infrared-emitting diode in a 6 pin plastic
dual inline package.
• Isolation test voltage (partial discharge test voltage)
V
pd
= 1.6 kV
• Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI
≥
325
• Thickness through insulation
≥
0.4 mm
• Compliant to RoHS directive 2002/95/EC
accordance to WEEE 2002/96/EC
and
in
AGENCY APPROVALS
• UL1577, file no. E52744, double protection
• BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950
(BS 7002), pending
• DIN EN 60747-5-5 (VDE 0884)
• FIMKO (SETI): EN 60950, certificate no. FI25155
APPLICATIONS
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage
≤
300 V
- for appl. class I - III at mains voltage
≤
600 V
according to DIN EN 60747-5-5 (VDE 0884)
ORDER INFORMATION
PART
CNY75A
CNY75B
CNY75C
CNY75GA
CNY75GB
CNY75GC
(1)
REMARKS
CTR 63 % to 125 %, DIP-6
CTR 100 % to 200 %, DIP-6
CTR 160 % to 320 %, DIP-6
CTR 63 % to 125 %, DIP-6, 400 mil
CTR 100 % to 200 %, DIP-6, 400 mil
CTR 160 % to 320 %, DIP-6, 400 mil
Note
(1)
G = leadform 10.16 mm; G is not marked on the body.
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254
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83536
Rev. 2.0, 28-Oct-09
CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC
Optocoupler, Phototransistor Output,
Vishay Semiconductors
with Base Connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector base voltage
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
AC isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
(2)
V
ISO
P
tot
T
amb
T
stg
T
sld
5000
200
- 55 to + 110
- 55 to + 125
260
V
RMS
mW
°C
°C
°C
V
CBO
V
CEO
V
ECO
I
C
I
CM
P
diss
T
j
70
70
7
50
100
70
125
V
V
V
mA
mA
mW
°C
V
R
I
F
t
p
≤
10 µs
I
FSM
P
diss
T
j
5
60
3
70
125
V
mA
A
mW
°C
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
t
p
/T = 0.5, t
p
≤
10 ms
2 mm from case, t
≤
10 s
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to wave profile for soldering conditions for through hole devices.
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Reverse current
Junction capacitance
OUTPUT
Collector base voltage
Collector emitter voltage
Emitter collector voltage
Collector emitter leakage current
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
(1)
(1)
TEST CONDITION
I
F
= 50 mA
V
R
= 6 V
V
R
= 0 V, f = 1 MHz
I
C
= 100 µA
I
C
= 1 mA
I
E
= 100 µA
V
CE
= 20 V, I
F
= 0 A
I
F
= 10 mA, I
C
= 1 mA
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100
Ω
f = 1 MHz
PART
SYMBOL
V
F
I
R
C
j
V
CBO
V
CEO
V
ECO
I
CEO
V
CEsat
f
c
C
k
MIN.
TYP.
1.25
50
MAX.
1.6
10
UNIT
V
µA
pF
V
V
V
nA
V
kHz
pF
70
70
7
150
0.3
110
0.6
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Document Number: 83536
Rev. 2.0, 28-Oct-09
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
255
CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
V
CE
= 5 V, I
F
= 1 mA
I
C
/I
F
V
CE
= 5 V, I
F
= 10 mA
PART
CNY75GA
CNY75GB
CNY75GC
CNY75GA
CNY75GB
CNY75GC
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
15
30
60
63
100
160
125
200
320
TYP.
MAX.
UNIT
%
%
%
%
%
%
SWITCHING CHARACTERISTICS
PARAMETER
Current time
TEST CONDITION
V
CC
= 5 V, R
L
= 100
Ω
PART
CNY75GA
CNY75GB
CNY75GC
CNY75GA
Delay time
V
CC
= 5 V, R
L
= 100
Ω
CNY75GB
CNY75GC
CNY75GA
Rise time
V
CC
= 5 V, R
L
= 100
Ω
CNY75GB
CNY75GC
CNY75GA
Fall time
V
CC
= 5 V, R
L
= 100
Ω
CNY75GB
CNY75GC
CNY75GA
Storage time
V
CC
= 5 V, R
L
= 100
Ω
CNY75GB
CNY75GC
CNY75GA
Turn-on time
V
CC
= 5 V, R
L
= 100
Ω
CNY75GB
CNY75GC
CNY75GA
Turn-off time
V
CC
= 5 V, R
L
= 100
Ω
CNY75GB
CNY75GC
CNY75GA
Turn-on time
V
CC
= 5 V, R
L
= 1 kΩ
CNY75GB
CNY75GC
CNY75GA
Turn-off time
V
CC
= 5 V, R
L
= 1 kΩ
CNY75GB
CNY75GC
SYMBOL
I
F
I
F
I
F
t
d
t
d
t
d
t
r
t
r
t
r
t
f
t
f
t
f
t
s
t
s
t
s
t
on
t
on
t
on
t
off
t
off
t
off
t
on
t
on
t
on
t
off
t
off
t
off
MIN.
TYP.
10
10
10
2
2.5
2.8
2.5
3
4.2
2.7
3.7
4.7
0.3
0.3
0.3
4.5
5.5
7
3
4
5
10
16.5
11
25
20
37.5
MAX.
UNIT
mA
mA
mA
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
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256
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83536
Rev. 2.0, 28-Oct-09
CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC
Optocoupler, Phototransistor Output,
Vishay Semiconductors
with Base Connection
MAXIMUM SAFETY RATINGS
PARAMETER
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
V
IOTM
T
si
6
150
kV
°C
P
diss
265
mW
I
F
130
mA
(1)
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
(1)
According DIN EN 60747-5-5. This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety
ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
Partial discharge test voltage -
lot test (sample test)
TEST CONDITION
100 %, t
test
= 1 s
t
Tr
= 60 s, t
test
= 10 s,
(see figure 1)
V
IO
= 500 V
Insulation resistance
V
IO
= 500 V, T
amb
≤
100 °C
V
IO
= 500 V, T
amb
≤
150 °C
(construction test only)
SYMBOL
V
pd
V
IOTM
V
pd
R
IO
R
IO
R
IO
MIN.
1.6
6
1.3
10
12
10
11
10
9
TYP.
MAX.
UNIT
kV
kV
kV
Ω
Ω
Ω
V
IOTM
t
1
, t
2
t
3
, t
4
t
test
t
stres
V
Pd
V
IOWM
V
IORM
= 1 to 10 s
=1s
= 10 s
= 12 s
0
13930
t
3
t
test
t
4
t
1
t
Tr
= 60 s
t
2
t
stres
t
Fig. 1 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-5-5 (VDE 0884)/DIN EN 60747-; IEC60747
Document Number: 83536
Rev. 2.0, 28-Oct-09
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
257
CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
PACKAGE DIMENSIONS
in millimeters
DIP-6
7.62 typ.
7.12
± 0.3
6.5
± 0.3
3.5 ± 0.3
4.5
± 0.3
4.5 ± 0.3
0.25
7.62 to 9.5 typ.
7.62 typ.
7.12
± 0.3
6.5
± 0.3
3.5 ± 0.3
0.25
10.16 (typ.)
6
5
4
4.5 ± 0.3
0.5
± 0.1
1.2
± 0.1
6
5
4
14771_2
1
2 3
DIP-6, 400 mil
4.5
± 0.3
0.5
± 0.1
1.2
± 0.1
14771_1
1
2 3
PACKAGE MARKING
CNY75A
V
YWW 24
21764-29
2.8 ± 0.15
2.8 ± 0.15
www.vishay.com
258
For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83536
Rev. 2.0, 28-Oct-09
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