SE2597L
2.4 GHz Power Amplifier with Power Detector
Preliminary Information
Applications
DSSS 2.4 GHz WLAN (IEEE802.11b)
OFDM 2.4 GHz WLAN (IEEE802.11g)
Access Points, PCMCIA, PC cards
Product Description
The SE2597L is a 2.4 GHz power amplifier designed
for use in the 2.4 GHz ISM band for wireless LAN
applications. The device incorporates a power
detector for closed loop monitoring of the output
power.
The SE2597L includes a digital enable control for
device on/off control.
The SE2597L temperature compensated power
detector is highly immune to mismatch at its output
with less than 1.5 dB of variation with a 2:1 mismatch.
Features
Single 3.3 V Supply Operation
o
19 dBm, EVM = 3 %, 802.11g, OFDM 54
Mbps
o
23 dBm, ACPR < -32 dBc, 802.11b
28 dB Gain
Integrated temperature compensated power
detector
Integrated power amplifier enable pin (V
EN
)
Lead Free, Halogen Free and RoHS compliant
Small package: 16 pin 3 mm x 3 mm x 0.9 mm
QFN
Ordering Information
Part Number
SE2597L
SE2597L-R
SE2597L-EK1
Package
16 Pin QFN
16 Pin QFN
Evaluation Kit
Remark
Samples
Tape and Reel
Standard
Functional Block Diagram
Figure 1: Functional Block Diagram
DST-00211
Rev 1.3
May-29-2009
1 of 2
SE2597L
2.4 GHz Power Amplifier with Power Detector
Preliminary Information
http://www.sige.com
Email: sales@sige.com
Customer Service Locations:
North America:
1050 Morrison Drive, Suite 100
Ottawa ON K2H 8K7 Canada
Phone: +1 613 820 9244
Fax: +1 613 820 4933
Hong Kong
Phone: +852 3428 7222
Fax: +852 3579 5450
San Diego
Phone: +1 858 668 3541 (ext. 226)
Fax: +1 858 668 3546
United Kingdom
Phone: +44 1279 464217
Fax: +44 1279 464201
Product Preview
The datasheet contains information from the product concept specification. SiGe Semiconductor, Inc. reserves the right to change
information at any time without notification.
Preliminary Information
The datasheet contains information from the design target specification. SiGe Semiconductor, Inc. reserves the right to change
information at any time without notification.
Production testing may not include testing of all parameters.
Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor, Inc. assumes
no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or
other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any
patent or other intellectual property rights of SiGe Semiconductor, Inc. or third parties. Specifications mentioned in this publication
are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe
Semiconductor, Inc. products are NOT authorized for use in implantation or life support applications or systems without express
written approval from SiGe Semiconductor, Inc.
Copyright 2009 SiGe Semiconductor, Inc.
All Rights Reserved
DST-00211
Rev 1.3
May-29-2009
2 of 2
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