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FM240-L

产品描述chip schottky barrier diodes - silicon epitaxial planer type
文件大小70KB,共2页
制造商Formosa MS
官网地址http://www.formosams.com/
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FM240-L概述

chip schottky barrier diodes - silicon epitaxial planer type

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Chip Schottky Barrier Diodes
FM220-L THRU FM2100-L
Silicon epitaxial planer type
Formosa MS
SMA-L
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy M
olding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
0.110(2.8)
0.094(2.4)
0.181(4.6)
0.165(4.2)
0.075(1.9)
0.067(1.7)
0.034(0.85)
0.024(0.60)
0.034(0.85)
0.024(0.60)
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting P
osition : Any
Weight : 0.0017 ounce, 0.057 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
A
=
25
o
C
o
CONDITIONS
Symbol
I
O
I
FSM
MIN.
TYP.
MAX.
2.0
50
0.5
10
UNIT
A
A
mA
mA
o
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
I
R
Rq
JA
C
J
T
STG
-55
75
160
V
R
= V
RRM
T
A
= 125 C
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
C / w
pF
+150
o
C
SYMBOLS
MARKING
CODE
SK22
SK23
SK24
SK25
SK26
SK28
S210
V
RRM
20
30
40
50
60
80
*1
V
RMS
14
21
28
35
42
56
70
*2
V
R
*3
V
F
*4
Operating
temperature
(
o
C)
(V)
FM220-L
FM230-L
FM240-L
FM250-L
FM260-L
FM280-L
FM2100-L
(V)
(V)
20
30
40
50
60
80
100
(V)
0.50
-55 to +125
*1 Repetitive peak reverse voltage
0.70
-55 to +150
0.85
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
100

FM240-L相似产品对比

FM240-L FM220-L FM250-L
描述 chip schottky barrier diodes - silicon epitaxial planer type chip schottky barrier diodes - silicon epitaxial planer type chip schottky barrier diodes - silicon epitaxial planer type

 
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