Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
BAT54
THRU
BAT54S
Features
•
•
•
Low Forward Voltage
Surface Mount device
Very small conduction losses
250mWatt, 30Volt
Schottky Barrier Diode
Type
4
LV3
B6
LD3
Single
Dual
Dual
Dual
Pin
Configuration
See page 3
Figure 1
Figure 2
Figure 3
Figure 4
Catalog
Number
BAT54
BAT54A
BAT54C
BAT54S
Device Marking
1
KL1
KL2
KL3
KL4
2
L4
L42
L43
L44
3
L4P
L42
L43
L44
SOT-23
A
D
C
B
Maximum Ratings
Continuos Reverse Voltage
Forward Current
Non-Repetitive Peak Forward Current t<1s
Total Power Dissipation @ T
A
= 25°C
Storage Temperature Range
Junction Temperature
Soldering temperature during 10s
V
R
I
F
I
FSM
P
D
T
stg
T
j
T
j
30V
0.3A
1.0A
250mW
-55°C to 150°C
150°C
260°C
G
F
E
H
J
K
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
Electrical Characteristics @ 25
°C
Unless Otherwise Specified
Ratings
Forward Voltage at
I
F
= 0.1mA
I
F
= 1mA
I
F
= 10mA
I
F
= 30mA
I
F
= 100mA
Reverse Current
Reverse Breakdown
Voltage
Capacitance
Reverse Recovery
Time
Thermal Resistance,
Junction to Ambient
Symbol
Max.
240mV
320mV
400mV
500mV
900mV
2.0 uA
>30V
10pF
5nS
430
°C/W
Notes
V
F
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
V
R
= 25V
.035
.900
.031
.800
I
R
V
(BR)
C
J
t
rr
R
θJA
Measured at
1.0MHz, V
R
=1.0V
I
F
=I
R
=10mA;
I
(REC)
= 1mA
.037
.950
.037
.950
.079
2.000
inches
mm
www.cnelectr.com
BAT54 thru BAT54S
Fig.1 :
Average forward power dissipation versus
average forward current.
PF(av)(W)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
IF(av) (A)
0.00
0.00
0.05
0.10
0.15
0.20
δ
=tp/T
tp
T
Fig.2 :
Average forward current versus ambient
temperature (
δ
= 1).
0.35
IF(av)(A)
δ = 0.1
δ = 0.05
δ = 0.2
δ = 0.5
0.30
0.25
δ=1
0.20
0.15
0.10
0.05
δ
=tp/T
T
tp
Tamb(°C)
0.25
0.30
0.00
0
25
50
75
100
125
150
Fig.3 :
Non repetitive surge peak forward current
versus overload duration (maximum values).
Fig.4 :
Relative variation of thermal impedance
junction to ambient versus pulse duration (alumine
substrate 10mm x 8mm x 0.5mm).
Zth(j-a)/Rth(j-a)
IM(A)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
I
M
0.2
0.1
0.0
1E-3
1.00
δ
= 0.5
δ
= 0.2
Ta=25°C
δ
= 0.1
Ta=50°C
0.10
T
Single pulse
Ta=100°C
t
δ
=0.5
t(s)
1E-2
1E-1
1E+0
tp(s)
δ
=tp/T
tp
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
www.cnelectr.com
BAT54 thru BAT54S
Fig.5 :
Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
1E+2
Tj=100°C
Fig.6 :
Reverse leakage current versus junction
temperature.
IR(µA)
1E+4
VR=30V
1E+3
1E+2
1E+1
1E+1
1E+0
1E-1
1E-2
Tj=50°C
1E+0
Tj=25°C
1E-1
VR(V)
0
5
10
15
20
25
30
Tj(°C)
1E-2
0
25
50
75
100
125
150
Fig.7 :
Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
10
F=1MHz
Tj=25°C
Fig.8 :
Forward voltage drop versus forward
current (typical values).
IFM(A)
5E-1
1E-1
Tj=100°C
5
1E-2
Tj=50°C
2
VR(V)
1
1
2
5
10
20
30
Tj=25°C
1E-3
VFM(V)
1E-4
0.0 0.1 0.2
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Pin Configuration - Top View
3
1
Figure 1
2
Figure 2
Figure 3
Figure 4
BAT54
BAT54A
BAT54C
BAT54S
www.cnelectr.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
