Digital transistors (built-in resistors)
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | ROHM(罗姆半导体) |
| 包装说明 | IN-LINE, R-PSIP-T3 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 其他特性 | DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 10 |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 33 |
| JESD-30 代码 | R-PSIP-T3 |
| JESD-609代码 | e1 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | PNP |
| 最大功率耗散 (Abs) | 0.3 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | TIN SILVER COPPER |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | 10 |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 250 MHz |
| VCEsat-Max | 0.3 V |
| Base Number Matches | 1 |
| DTA113ZSA | DTA113 | DTA113ZE | DTA113ZKA | DTA113ZUA | |
|---|---|---|---|---|---|
| 描述 | Digital transistors (built-in resistors) | Digital transistors (built-in resistors) | Digital transistors (built-in resistors) | Digital transistors (built-in resistors) | Digital transistors (built-in resistors) |
| 是否Rohs认证 | 符合 | - | 符合 | 符合 | 符合 |
| 厂商名称 | ROHM(罗姆半导体) | - | ROHM(罗姆半导体) | ROHM(罗姆半导体) | ROHM(罗姆半导体) |
| 包装说明 | IN-LINE, R-PSIP-T3 | - | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | compliant | - | compli | compli | compli |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 |
| 其他特性 | DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 10 | - | DIGITAL, BUILT IN BIAS RESISTOR RATIO 10 | DIGITAL, BUILT IN BIAS RESISTOR RATIO 10 | DIGITAL, BUILT IN BIAS RESISTOR RATIO 10 |
| 最大集电极电流 (IC) | 0.1 A | - | 0.1 A | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 50 V | - | 50 V | 50 V | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR | - | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 33 | - | 33 | 33 | 33 |
| JESD-30 代码 | R-PSIP-T3 | - | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| JESD-609代码 | e1 | - | e1 | e1 | e1 |
| 元件数量 | 1 | - | 1 | 1 | 1 |
| 端子数量 | 3 | - | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 | - | 260 | 260 | 260 |
| 极性/信道类型 | PNP | - | PNP | PNP | PNP |
| 最大功率耗散 (Abs) | 0.3 W | - | 0.15 W | 0.2 W | 0.2 W |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | - | YES | YES | YES |
| 端子面层 | TIN SILVER COPPER | - | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
| 端子形式 | THROUGH-HOLE | - | GULL WING | GULL WING | GULL WING |
| 端子位置 | SINGLE | - | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | 10 | - | 10 | 10 | 10 |
| 晶体管应用 | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON |
| 是否无铅 | - | - | 不含铅 | 不含铅 | 不含铅 |
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