Specification Comparison
Vishay Siliconix
TN0200K vs. TN0200T
Description: N-Channel MOSFET
Package:
SOT-23
Pin Out:
Identical
Part Number Replacements:
TN0200K-T1 Replaces TN0200T-T1
TN0200K-T1—E3 (Lead Free version) Replaces TN0200T-T1
Summary of Performance:
The TN0200K is a technological upgrade with ESD protection for the original TN0200T. The ESD protection diodes on the
gate increase Gate-Body Leakage; otherwise both parts perform identically including limits to the parametric tables below.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
_C
UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
See Note
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
j
and T
stg
R
thJA
TN0200K
20
"8
0.73
0.58
4
0.35
0.22
−55
to 150
357
TN0200T
20
"8
0.73
0.58
4
0.35
0.22
−55
to 150
357
Unit
V
A
W
_C
_C/W
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
SPECIFICATIONS (T
J
= 25
_C
UNLESS OTHERWISE NOTED)
TN0200K
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State
On State Drain Current
Drain-Source On-Resistance
Drain Source On Resistance
Forward Transconductance
Diode Forward Voltage
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 4.5 V
V
GS
= 2.5 V
V
(BR)DSS
V
G(th)
I
GSS
I
DSS
I
D( )
D(on)
r
D ( )
Ds(on)
g
fs
V
SD
2.5
1.5
0.2
0.25
2.2
0.8
1.2
0.4
0.5
20
0.45
0.6
1.0
"5000
1
2.5
1.5
0.29
0.34
2.2
0.8
1.2
0.4
0.5
20
0.5
0.9
1.5
"100
1
V
nA
mA
A
W
S
V
TN0200T
Max
Min
Typ
Max
Unit
Symbol
Min
Typ
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
1400
190
300
2000
1900
50
750
2800
pC
nC
Switching
Turn-On Time
Turn-Off
Turn Off Time
NS denotes parameter not specified.
t
d(on)
t
r
t
d(off)
t
f
17
20
55
30
25
30
85
45
8
14
21
7
13
21
30
11
ns
Document Number: 73004
19-May-04
www.vishay.com
1
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
