BC 856W ... BC 860W
PNP
General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
2
±0.1
0.3
3
200 mW
SOT-323
0.01 g
1
±0.1
1.25
±0.1
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Type
Code
1
2
1.3
Dimensions / Maße in mm
1=B
2=E
3=C
Maximum ratings (T
A
= 25
/
C)
BC 856W
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- V
CE0
- V
CB0
- V
EB0
P
tot
- I
C
- I
CM
- I
BM
I
EM
T
j
T
S
65 V
80 V
2.1
±0.1
Grenzwerte (T
A
= 25
/
C)
BC 857W
BC 860W
45 V
50 V
5V
200 mW
1
)
100 mA
200 mA
200 mA
200 mA
150
/
C
- 65…+ 150
/
C
BC 858W
BC 859W
30 V
30 V
Characteristics (T
j
= 25
/
C)
Group A
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
- V
CE
= 5 V, - I
C
= 10
:
A
- V
CE
= 5 V, - I
C
= 2 mA
h
FE
h
FE
typ. 90
110...220
typ. 220
1.6...4.5 k
S
18 < 30
:
S
typ.1.5 *10
-4
Kennwerte (T
j
= 25
/
C)
Group B
typ. 150
200...450
typ. 330
3.2...8.5 k
S
30 < 60
:
S
typ. 2 *10
-4
Group C
typ. 270
420...800
typ. 600
6...15 k
S
60 < 110
:
S
typ. 3 *10
-4
h-Parameters at - V
CE
= 5V, - I
C
= 2 mA, f = 1 kHz
Small signal current gain – Stromverstärkung h
fe
Input impedance – Eingangs-Impedanz
Output admittance – Ausgangs-Leitwert
Reverse voltage transfer ratio
Spannungsrückwirkung
1
h
ie
h
oe
h
re
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% – Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhältnis
#
2%
16
01.11.2003
General Purpose Transistors
Characteristics (T
j
= 25
/
C)
Min.
Collector saturation volt. – Kollektor-Sättigungsspannung
1
)
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
Base-Emitter voltage – Basis-Emitter-Spannung
1
)
- V
CE
= 5 V, - I
C
= 2 mA
- V
CE
= 5 V, - I
C
= 10 mA
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, - V
CB
= 30 V
I
E
= 0, - V
CB
= 30 V, T
j
= 150
/
C
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, - V
EB
= 5 V
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 100 MHz
- V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
Noise figure – Rauschzahl
- V
CE
= 5 V, - I
C
= 200
:
A
R
G
= 2 k
S
, f = 1 kHz,
)
f = 200 Hz
- V
CE
= 5 V, - I
C
= 200
:
A
R
G
= 2 k
S
, f = 30...15 kHz
BC 856W...
F
BC 858W
BC 859W...
BC860W
BC 859W
BC 860W
F
F
–
–
–
–
R
thA
f
T
C
CB0
100 MHz
–
- I
EB0
–
- I
CB0
- I
CB0
–
–
- V
BEon
- V
BEon
600 mV
–
-V
CEsat
-V
CEsat
- V
BEsat
- V
BEsat
–
–
–
–
BC 856W ... BC 860W
Kennwerte (T
j
= 25
/
C)
Typ.
75 mV
250 mV
700 mV
850 mV
650 mV
–
–
–
–
–
10 pF
Max.
300 mV
600 mV
–
–
750 mV
820 mV
15 nA
4
:
A
100 nA
–
12 pF
Base saturation voltage – Basis-Sättigungsspannung
1
)
Collector-Base Capacitance – Kollektor-Basis-Kapazität
–
–
–
–
10 dB
4 dB
4 dB
4 dB
620 K/W
2
)
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC 856AW = 3A
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstärkungsgruppen pro Typ
BC 857AW = 3E
BC 858AW = 3J
BC 846W ... BC 850W
BC 856BW = 3B
BC 857BW = 3F
BC 858BW = 3K
BC 859BW = 4B
BC 860BW = 4F
BC 857CW = 3G
BC 858CW = 3L
BC 859CW = 4C
BC 860CW = 4G
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% – Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhältnis
#
2%
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
1
2
17
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
