BCW 65, BCW 66
NPN
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
2.9
±0.1
0.4
3
250 mW
SOT-23
(TO-236)
0.01 g
1.1
Plastic case
Kunststoffgehäuse
1.3
±0.1
Type
Code
1
2
2.5
max
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1.9
Dimensions / Maße in mm
1=B
2=E
3=C
Maximum ratings (T
A
= 25
/
C)
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Collector current – Kollektor-Spitzenstrom
Base current – Basis-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
V
CE0
V
CB0
V
EB0
P
tot
I
C
I
CM
I
B
I
BM
T
j
T
S
Grenzwerte (T
A
= 25
/
C)
BCW 65
32 V
60 V
5V
250 mW
1
)
800 mA
1000 mA
100 mA
200 mA
150
/
C
- 65…+ 150
/
C
BCW 66
45 V
75 V
Characteristics (T
j
= 25
/
C)
Min.
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, V
CB
= 32 V
I
E
= 0, V
CB
= 32 V, T
j
= 150
/
C
I
E
= 0, V
CB
= 45 V
I
E
= 0, V
CB
= 45 V, T
j
= 150
/
C
I
C
= 0, V
EB
= 4 V
BCW 65
BCW 66
I
CB0
I
CB0
I
CB0
I
CB0
I
EB0
–
–
–
–
–
Kennwerte (T
j
= 25
/
C)
Typ.
–
–
–
–
–
Max.
20 nA
20
:
A
20 nA
20
:
A
20 nA
Emitter-Base cutoff current – Emitterreststrom
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
42
General Purpose Transistors
Characteristics (T
j
= 25
/
C)
Min.
Collector saturation volt. – Kollektor-Sättigungsspg.
1
)
I
C
= 100 mA, I
B
= 10 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 100 mA, I
B
= 10 mA
I
C
= 500 mA, I
B
= 50 mA
BCW 65A / 66F
V
CE
= 10 V, I
C
= 100
:
A
BCW 65B / 66G
BCW 65C / 66H
BCW 65A / 66F
V
CE
= 1 V, I
C
= 10 mA
BCW 65B / 66G
BCW 65C / 66H
BCW 65A / 66F
V
CE
= 1 V, I
C
= 100 mA
BCW 65B / 66G
BCW 65C / 66H
BCW 65A / 66F
V
CE
= 2 V, I
C
= 500 mA
BCW 65B / 66G
BCW 65C / 66H
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 5 V, I
C
= 50 mA, f = 100 MHz
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking – Stempelung
BCW 65A = EA
BCW 66F = EF
f
T
C
CB0
C
EB0
–
–
–
R
thA
V
CEsat
V
CEsat
V
BEsat
V
BEsat
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
–
–
–
–
35
50
80
75
110
180
100
160
250
–
–
–
BCW 65, BCW 66
Kennwerte (T
j
= 25
/
C)
Typ.
–
–
–
–
–
–
–
–
–
–
160
250
350
35
60
100
170 MHz
6 pF
60 pF
Max.
300 mV
700 mV
1.25 V
2V
–
–
–
–
–
–
250
400
630
–
–
–
–
–
–
420 K/W
2
)
BCW 67, BCW 68
BCW 65B = EB
BCW 66G = EG
BCW 65C = EC
BCW 66H = EH
Base saturation voltage – Basis-Sättigungsspannung
1
)
DC current gain – Kollektor-Basis-Stromverhältnis
1
)
Collector-Base Capacitance – Kollektor-Basis-Kapazität
Emitter-Base Capacitance – Emitter-Basis-Kapazität
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% – Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhältnis
#
2%
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
1
2
43
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