Dual Enhancement Mode Field Effect Transistor (N and P Channel)
CEM4279
5
FEATURES
40V, 6.1A, R
DS(ON)
= 32mΩ @V
GS
= 10V.
R
DS(ON)
= 46mΩ @V
GS
= 4.5V.
-40V, -4.3A, R
DS(ON)
= 66mΩ @V
GS
= -10V.
R
DS(ON)
= 105mΩ @V
GS
= -4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
D
1
8
D
1
7
D
2
6
D
2
5
1
1
S
1
2
G
1
3
S
2
4
G
2
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
T
A
= 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
N-Channel
40
P-Channel
-40
Units
V
V
A
A
W
C
±
20
6.1
24
2.0
-55 to 150
±
20
-4.3
-17
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
b
Symbol
R
θJA
Limit
62.5
Units
C/W
Details are subject to change without notice .
1
Rev 2. 2007.Jan
http://www.cetsemi.com
CEM4279
N-Channel Electrical Characteristics
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Static Drain-Source
On-Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward Current
b
Drain-Source Diode Forward Voltage
c
d
d
c
T
A
= 25 C unless otherwise noted
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 40V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V, I
D
= 6.1A
V
GS
= 4.5V, I
D
= 4.9A
V
DS
= 5V, I
D
= 6.1A
V
DS
= 20V, V
GS
= 0V,
f = 1.0 MHz
1
25
35
3
1050
155
95
14
V
DD
= 20V, I
D
= 6.1A,
V
GS
= 10V, R
GEN
=3Ω
10
17
18
V
DS
= 20V, I
D
= 6.1A,
V
GS
= 4.5V
10.1
3.5
4.0
6.1
V
GS
= 0V, I
S
= 1.0A
1.0
30
20
35
35
13
Min
40
1
100
-100
3
32
46
Typ
Max
Units
V
µA
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
nA
nA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
Gate Threshold Voltage
Forward Transconductance
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Drain-Source Diode Characteristics and Maximun Ratings
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CEM4279
P-Channel Electrical Characteristics
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Static Drain-Source
On-Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward Current
b
Drain-Source Diode Forward Voltage
c
d
d
c
T
A
= 25 C unless otherwise noted
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -40V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
V
GS
= V
DS
, I
D
= -250µA
V
GS
= -10V, I
D
= -4.3A
V
GS
= -4.5V, I
D
= -3.7A
V
DS
= -5V, I
D
= -4.3A
V
DS
= -20V, V
GS
= 0V,
f = 1.0 MHz
-1
55
85
7
705
125
75
13
3
31
5
V
DS
= -20V, I
D
= -4.3A,
V
GS
= -4.5V
5.6
2.1
2.3
-4.3
V
GS
= 0V, I
S
= -1.3A
-1.2
26
6
62
10
7.4
Min
-40
-1
100
-100
-3
66
105
Typ
Max
Units
V
µA
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
5
nA
nA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
Gate Threshold Voltage
Forward Transconductance
V
DD
= -15V, I
D
= -1A,
V
GS
= -10V, R
GEN
= 6Ω
Drain-Source Diode Characteristics and Maximun Ratings
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
3
CEM4279
N-CHANNEL
20
V
GS
=10,8,6,5V
16
V
GS
=4V
15
I
D
, Drain Current (A)
I
D
, Drain Current (A)
12
12
9
5
25 C
8
6
V
GS
=3V
4
3
T
J
=125 C
-55 C
2
3
4
5
0
0
1
2
3
4
0
0
1
V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
1500
1250
2.2
1.9
1.6
1.3
1.0
0.7
0.4
-100
V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
I
D
=6.1A
V
GS
=10V
C, Capacitance (pF)
Ciss
1000
750
500
250
0
0
Crss
5
10
15
20
25
Coss
-50
0
50
100
150
200
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
V
GS
=0V
1
V
TH
, Normalized
Gate-Source Threshold Voltage
V
DS
=V
GS
I
D
=250µA
I
S
, Source-drain current (A)
25
50
75
100
125
150
10
10
0
10
-25
0
-1
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4
P-CHANNEL
25
20
15
10
5
0
-V
GS
=10,8V
CEM4279
10
-I
D
, Drain Current (A)
-V
GS
=5.0V
-I
D
, Drain Current (A)
8
6
4
25 C
2
T
J
=125 C
-55 C
2
3
4
5
0
-V
GS
=4.0V
0
0.5
1
1.5
2
2.5
0
1
-V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
900
750
600
450
300
150
0
Coss
Crss
0
5
10
15
20
25
Ciss
2.2
1.9
1.6
1.3
1.0
0.7
0.4
-100
-V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
I
D
=-4.3A
V
GS
=-10V
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
-V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
V
DS
=V
GS
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
-I
S
, Source-drain current (A)
V
GS
=0V
10
1
V
TH
, Normalized
Gate-Source Threshold Voltage
I
D
=-250µA
10
0
-25
0
25
50
75
100
125
150
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
-V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
5
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