HM628512 Series
524288-word
×
8-bit High Speed CMOS Static RAM
ADE-203-236F (Z)
Rev. 6.0
Jun. 9, 1995
Description
The Hitachi HM628512 is a 4-Mbit static RAM organized 512-kword
×
8-bit. It realizes igher density, higher
performance and low power consumption by employing 0.5
µm
Hi-CMOS process technology. The device,
packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is
available for high density mounting. LP-version is suitable for battery backup system.
Features
•
High speed: Fast access time:
55/65/70 ns (max)
•
Low power
Standby: 10
µW
(typ) (L/L-SL version)
Operation: 75 mW (typ) (f = 1 MHz)
•
Single 5 V supply
•
Completely static memory
No clock or timing strobe required
•
Equal access and cycle times
•
Common data input and output: Three state output
•
Directly TTL compatible: All inputs and outputs
•
Capability of battery backup operation (L/L-SL version)
HM628512 Series
Ordering Information
Type No.
HM628512P-5
HM628512P-7
HM628512LP-5
HM628512LP-7A
HM628512LP-7
HM628512LP-5SL
HM628512LP-7SL
HM628512FP-5
HM628512FP-7
HM628512LFP-5
HM628512LFP-7A
HM628512LFP-7
HM628512LFP-5SL
HM628512LFP-7SL
HM628512LTT-5
HM628512LTT-7A
HM628512LTT-7
HM628512LTT-5SL
HM628512LTT-7SL
HM628512LRR-5
HM628512LRR-7A
HM628512LRR-7
HM628512LRR-5SL
HM628512LRR-7SL
Access Time
55 ns
70 ns
55 ns
65 ns
70 ns
55 ns
70 ns
55 ns
70 ns
55 ns
65 ns
70 ns
55 ns
70 ns
55 ns
65 ns
70 ns
55 ns
70 ns
55 ns
65 ns
70 ns
55 ns
70 ns
400-mil 32-pin plastic TSOP II reverse (TTP-32DR)
400-mil 32-pin plastic TSOP II (TTP-32D)
525-mil 32-pin plastic SOP (FP-32D)
Package
600-mil 32-pin plastic DIP (DP-32)
2
HM628512 Series
Function Table
WE
X
H
H
L
L
CS
H
L
L
L
L
OE
X
H
L
H
L
Mode
Not selected
Output disable
Read
Write
Write
V
CC
Current
I
SB
, I
SB1
I
CC
I
CC
I
CC
I
CC
Dout Pin
High-Z
High-Z
Dout
Din
Din
Ref. Cycle
—
—
Read cycle
Write cycle (1)
Write cycle (2)
Note: X: H or L
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS *1
Power dissipation
Operating temperature
Storage temperature
Storage temperature under bias
Symbol
V
T
P
T
Topr
Tstg
Tbias
Value
–0.5
*2
to +7.0
1.0
0 to +70
–55 to +125
–10 to +85
Unit
V
W
°C
°C
°C
Notes: 1. Relative to V
SS
.
2. –3.0 V for pulse half-width
≤
30 ns
Recommended DC Operating Conditions
(Ta = 0 to +70°C)
Parameter
Supply voltage
Symbol
V
CC
V
SS
Input high (logic 1) voltage
Input low (logic 0) voltage
Note:
V
IH
V
IL
Min
4.5
0
2.2
–0.3
*1
Typ
5.0
0
—
—
Max
5.5
0
6.0
0.8
Unit
V
V
V
V
1. –3.0 V for pulse half-width
≤
30 ns
5
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