NVMFD5485NL
Power MOSFET
60 V, 44 mW, 20 A, Dual N−Channel
Features
•
•
•
•
•
Small Footprint (5x6 mm) for Compact Designs
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
175°C Operating Temperature
NVMFD5485NLWF − Wettable Flank Option for Enhanced Optical
Inspection
•
AEC−Q101 Qualified and PPAP Capable
•
This is a Pb−Free Device
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
(Notes 1, 2, 4)
Power Dissipation
R
qJC
(Notes 1, 2)
Continuous Drain
Current R
qJA
(Notes 1, 3 & 4)
Power Dissipation
R
qJA
(Notes 1 & 3)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
60
"20
19.5
13.8
38.5
19.2
5.3
3.8
2.9
1.4
113
−55 to
175
37
31
A
°C
A
mJ
W
A
W
Unit
V
V
A
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V
(BR)DSS
60 V
60 mW @ 4.5 V
Dual N−Channel
D1
D2
R
DS(on)
MAX
44 mW @ 10 V
20 A
I
D
MAX
G1
S1
G2
S2
MARKING DIAGRAM
1
D1 D1
S1
G1
S2
G2
XXXXXX
AYWZZ
D2 D2
D1
D1
D2
D2
DFN8 5x6
(SO8FL)
CASE 506BT
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L(pk)
= 25 A, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
XXXXXX = 5485NL
XXXXXX =
(NVMFD5485NL) or
XXXXXX =
5485LW
XXXXXX =
(NVMFD5485NLWF)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
NVMFD5485NLT1G
Package
Shipping
†
THERMAL RESISTANCE MAXIMUM RATINGS
(Note 1)
Parameter
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 3)
Symbol
R
qJC
R
qJA
Value
3.9
52
Unit
°C/W
DFN8
1500/
(Pb−Free) Tape & Reel
DFN8
5000/
(Pb−Free) Tape & Reel
DFN8
1500/
(Pb−Free) Tape & Reel
DFN8
5000/
(Pb−Free) Tape & Reel
NVMFD5485NLT3G
NVMFD5485NLWFT1G
NVMFD5485NLWFT3G
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted to an ideal (infinite) heat sink.
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second are higher but are dependent
on pulse duration and duty cycle.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
1
May, 2015 − Rev. 3
Publication Order Number:
NVMFD5485NL/D
NVMFD5485NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
Reference to 25°C
I
D
= 250
mA
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 10 A
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 48 V,
I
D
= 10 A
V
GS
= 10 V, V
DS
= 48 V,
I
D
= 10 A
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 25 V
560
126
58
20
0.52
1.9
7.9
11.5
nC
nC
pF
1.5
−4.86
33
42
44
60
2.5
V
mV/°C
mW
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V, I
D
= 250
mA
Reference to 25°C
I
D
= 250
mA
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C
T
J
= 125°C
60
67
1.0
10
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
±20
V
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
T
J
= 25°C
T
J
= 125°C
V
GS
= 4.5 V, V
DS
= 48 V,
I
D
= 10 A, R
G
= 2.5
W
9.5
26.6
27.8
23.7
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
L
S
L
D
L
G
R
G
T
A
= 25°C
0.93
0.005
1.84
12
W
nH
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= 10 A
V
GS
= 0 V,
I
S
= 15 A
0.93
0.83
28.9
23.2
5.6
35.5
nC
ns
1.2
V
5. Pulse Test: pulse width = 300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVMFD5485NL
TYPICAL CHARACTERISTICS
30
25
20
15
10
3.3 V
5
2.7 V
0
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
3.1 V
2.9 V
5.5 V
30
4.5 V
4.1 V
3.9 V
3.7 V
3.5 V
I
D
, DRAIN CURRENT (A)
25
20
15
10
T
J
= 25°C
5
T
J
= 125°C
0
1
2
T
J
= −55°C
3
4
5
V
DS
= 10 V
V
GS
= 10 to 6.5 V
I
D
, DRAIN CURRENT (A)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
0.08
0.07
0.06
0.05
0.04
0.03
0.02
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
= 10 A
T
J
= 25°C
Figure 2. Transfer Characteristics
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
2
6
10
14
18
22
26
30
I
D
, DRAIN CURRENT (A)
V
GS
= 10 V
T
J
= 25°C
V
GS
= 4.5 V
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. V
GS
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
−50 −25
1.0E−04
I
D
= 10 A
V
GS
= 10 V
I
DSS
, LEAKAGE (A)
1.0E−05
1.0E−06
1.0E−07
1.0E−08
1.0E−09
1.0E−10
1.0E−11
1.0E−12
0
25
50
75
100
125
150
175
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
5
10
15
20
25
30
35
40
45
50
55 60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NVMFD5485NL
TYPICAL CHARACTERISTICS
1000
900
C, CAPACITANCE (pF)
800
700
600
500
400
300
200
100
0
0
10
C
rss
20
30
40
50
60
C
oss
C
iss
T
J
= 25°C
V
GS
= 0 V
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
Q
g
, TOTAL GATE CHARGE (nC)
Q
gs
Q
gd
V
DD
= 48 V
I
D
= 10 A
T
J
= 25°C
QT
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 48 V
V
GS
= 4.5 V
I
D
= 10 A
t, TIME (ns)
100
t
d(off)
t
r
10
t
d(on)
t
f
10
9
8
7
6
5
4
3
2
1
0
1
10
R
G
, GATE RESISTANCE (W)
100
0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
T
J
= 25°C
V
GS
= 0 V
1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
T
C
= 25°C
V
GS
= 10 V
Single Pulse
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
100
10
ms
100
ms
1 ms
10 ms
dc
10
1
0.1
0.01
0.1
R
DS(on)
Limit
Thermal Limit
Package Limit
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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NVMFD5485NL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
10
R(t) (°C/W)
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
0.1
1
10
100
1000
1
Figure 12. Thermal Response
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