Preliminary Specification
NPN SILICON RF TRANSISTOR
SOT323
TBN6301 series
Unit in mm
2.1±0.1
1.25±0.05
□
Applications
- UHF and VHF wide band amplifier
2.0±0.2
1.30±0.1
1
3
2
0.30±0.1
0.1 Min.
□
Features
- High gain bandwidth product
f
T
= 6 GHz @ V
CE
= 3 V, I
C
= 10 mA
f
T
= 7.5 GHz @ V
CE
= 5 V, I
C
= 20 mA
- High power gain
|S
21
|
2
= 9 dB @ V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
- Low noise figure
NF = 1.4 dB @ V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
0.90±0.1
Pin Configuration
(TBN6301U)
1. Base
2. Emitter
3. Collector
□
Absolute Maximum Ratings
(T
A
= 25
℃)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
P
tot
T
j
T
stg
Ratings
20
8
3
75
150
150
-65 ~ 150
Unit
V
V
V
mA
mW
℃
℃
Caution
:
Electro Static Discharge
sensitive device
http://www.tachyonics.co.kr
Dec. 2005.
0~0.1
Page 1 of 6
Rev. 1.0
0.15±0.05
Preliminary Specification
□
Electrical Characteristics
(T
A
= 25
℃)
Parameter
Collector Cut-off Current
Symbol
I
CBO
I
CEO
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
I
EBO
h
FE
f
T
Test Conditions
V
CB
= 15 V, I
E
= 0 mA
V
CE
= 8 V, I
B
= 0 mA
V
EB
= 2 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 10 mA
V
CE
= 3 V, I
C
= 10 mA
V
CE
= 5 V, I
C
= 20 mA
Insertion Power Gain
|S
21
|
2
V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
V
CE
= 5 V, I
C
= 20 mA, f = 1 GHz
Noise Figure
Reverse Transfer Capacitance
NF
C
re
V
CE
= 3 V, I
C
= 10 mA, f = 1 GHz
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
50
5
6
7
7
TBN6301 series
Min.
Typ.
Max.
0.5
10
0.5
250
Unit
㎂
㎂
㎂
6
7.5
9
9.5
1.4
1.1
1.8
GHz
GHz
dB
dB
pF
□
h
FE
Classification
Marking
h
FE
Value
SB2
50 - 160
SB1
125 - 250
□
Available Package
Product
TBN6301S
TBN6301U
TBN6301E
TBN6301KF
Package
SOT23
SOT323
SOT523
SOT623F
Unit in mm
Dimension
2.9
ⅹ
1.3, 1.2t
2.0
ⅹ
1.25, 1.0t
1.6
ⅹ
0.8, 0.8t
1.4
ⅹ
0.8, 0.6t
http://www.tachyonics.co.kr
Dec. 2005.
Page 2 of 6
Rev. 1.0
Preliminary Specification
TBN6301 series
□
Typical Characteristics ( T
A
= 25
℃
, unless otherwise specified)
Power Dissipation
vs. Ambient Temperature
200
Reverse Transfer Capacitance
vs. Collector to Base Voltage
Reverse Transfer Capacitance, C
re
(pF)
1.4
f = 1 MHz
Collector Power Dissipation, P
C
(mW)
150
1.2
100
1.0
50
0
0
25
50
75
100
o
125
150
0.8
0
1
2
3
4
5
6
7
Ambient Temperature, T
A
( C)
Collector to Base Voltage, V
CB
(V)
DC Current Gain
vs. Collector Current
400
350
300
V
CE
= 3 V
30
25
20
15
10
5
Collector Current
vs. Base to Emitter Voltage
V
CE
= 3 V
250
200
150
100
50
0
0.1
Collector Current, I
C
(mA)
1
10
100
DC Current Gain, h
FE
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector Current, I
C
(mA)
Base to Emitter Voltage, V
BE
(V)
http://www.tachyonics.co.kr
Dec. 2005.
Page 3 of 6
Rev. 1.0
Preliminary Specification
TBN6301 series
Base Current, Collector Current
vs. Base to Emitter Voltage
Base Current, I
B
or Collector Current, I
C
(A)
10
10
10
10
10
10
10
10
10
0
Collector Current
vs. Collector to Emitter Voltage
70
I
B
Step = 50
µ
A
-1
-2
Collector Current, I
C
(mA)
V
CE
= 3 V
60
50
40
30
20
10
-3
-4
-5
-6
-7
-8
10
-9
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.0
0
1
2
3
4
5
6
Base to Emitter Voltage, V
BE
(V)
Collector to Emitter Voltage, V
CE
(V)
Gain Bandwidth Product
vs. Collector Current
14
30
Insertion Power Gain
vs. Frequency
V
CE
= 3 V
I
C
= 10 mA
Gain Bandwidth Product, f
T
(GHz)
12
10
8
6
4
2
0
1
Insertion Power Gain, |S
21
| (dB)
V
CE
= 3 V
V
CE
= 5 V
V
CE
= 7 V
25
20
15
10
5
0
0.1
2
10
100
1
Collector Current, I
C
(mA)
Frequency (GHz)
http://www.tachyonics.co.kr
March. 2005.
Page 4 of 6
Rev. 1.0
Preliminary Specification
TBN6301 series
Insertion Power Gain
vs. Collector Current
16
20
Maximum Available Gain
vs. Collector Current
Maximum Available Gain, MAG (dB)
V
CE
= 3 V
V
CE
= 5 V
V
CE
= 7 V
f = 1 GHz
Insertion Power Gain, |S
21
| (dB)
14
12
10
8
6
4
2
0
1
V
CE
= 3 V
V
CE
= 5 V
V
CE
= 7 V
f = 1 GHz
2
15
10
5
0
10
100
1
10
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
http://www.tachyonics.co.kr
March. 2005.
Page 5 of 6
Rev. 1.0
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