Excelics
DATA SHEET
•
•
•
•
•
•
+31.0dBm TYPICAL OUTPUT POWER
5.5dB TYPICAL POWER GAIN AT 18GHz
0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
Idss SORTED IN 40mA PER BIN RANGE
EPA160B
High Efficiency Heterojunction Power FET
540
50
156
D
D
48
370
100
40
S
95
G
50
S
120
G
S
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
P
1dB
G
1dB
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
Saturated Drain Current
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Vgs=0V
Vds=3V, Ids=4.5mA
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
MIN
29.0
9.0
TYP
31.0
31.0
10.5
5.5
45
MAX
UNIT
dBm
dB
%
290
320
480
500
-1.0
660
mA
mS
-2.5
V
V
V
o
Drain Breakdown Voltage Igd=1.6mA
Source Breakdown Voltage Igs=1.6mA
Thermal Resistance (Au-Sn Eutectic Attach)
-11
-7
-15
-14
33
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
12V
8V
Vds
Gate-Source Voltage
-8V
-3V
Vgs
Drain Current
Idss
435mA
Ids
Forward Gate Current
80mA
14mA
Igsf
Input Power
28dBm
@3dB Compression
Pin
Channel Temperature
175
o
C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
4.1W
3.4W
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EPA160B
DATA SHEET
High Efficiency Heterojunction Power FET
P-1dB & PAE vs. Vds
f = 12 GHz
Ids = 50% Idss
Pout (dBm) or PAE (%)
40
P-1dB (dBm)
55
50
45
40
35
25
4
5
6
7
8
Drain-Source Voltage (V)
30
PAE (%)
35
50
40
30
20
10
0
0
5
10
15
20
25
Pin (dBm)
Pout
PAE
Pout & PAE vs. Pin
f = 12 GHz
Vds = 8V, Ids = 50% Idss
30
S-PARAMETERS
8V, 1/2 Idss
FREQ
(GHz)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
Note:
--- S11 ---
--- S21 ---
MAG ANG MAG
ANG
0.902 -115.3 15.468
116.0
0.884 -146.5 8.678
96.8
0.881 -158.7 5.971
86.9
0.881 -166.4 4.579
79.4
0.880 -172.1 3.705
72.6
0.878 -176.6 3.113
66.5
0.879 179.0 2.703
60.7
0.882 174.5 2.374
55.1
0.881 169.9 2.110
49.6
0.887 165.5 1.900
44.4
0.891 160.6 1.718
38.8
0.898 155.6 1.557
33.2
0.905 151.0 1.411
27.7
0.908 146.6 1.277
22.3
0.910 143.2 1.151
17.2
0.912 140.2 1.051
12.1
0.920 137.9 0.956
7.7
0.934 135.9 0.880
3.0
0.934 134.4 0.810
-1.7
0.932 133.9 0.742
-5.7
0.923 134.3 0.684
-8.6
0.934 135.0 0.641
-11.5
0.946 134.6 0.616
-14.3
0.948 133.8 0.579
-17.7
0.949 133.0 0.558
-20.0
0.935 131.3 0.527
-22.3
--- S12 ---
MAG ANG
0.025
38.1
0.028
27.8
0.030
28.6
0.031
30.7
0.032
35.1
0.034
38.3
0.036
40.0
0.038
41.6
0.038
44.4
0.040
45.0
0.042
45.8
0.044
45.9
0.044
45.4
0.046
43.1
0.047
42.3
0.048
39.5
0.050
37.6
0.052
37.6
0.054
34.6
0.057
33.8
0.060
32.2
0.063
32.4
0.068
32.5
0.072
33.3
0.079
32.7
0.084
33.0
--- S22 ---
MAG ANG
0.298 -138.8
0.342 -156.8
0.351 -163.1
0.359 -165.6
0.367 -165.7
0.381 -165.8
0.396 -164.7
0.416 -163.6
0.437 -162.9
0.461 -161.9
0.491 -161.5
0.521 -161.7
0.554 -162.8
0.580 -164.2
0.605 -166.4
0.626 -168.6
0.645 -171.6
0.665 -174.5
0.684 -177.7
0.697 178.4
0.700 174.7
0.707 171.7
0.718 168.7
0.719 166.0
0.722 163.7
0.723 162.4
The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 7 mils each.
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