S E M I C O N D U C T O R
HGTG40N60B3
70A, 600V, UFS Series N-Channel IGBT
Package
JEDEC STYLE TO-247
E
C
G
PRELIMINARY
May 1995
Features
• 70A, 600V at T
C
= +25
o
C
• Square Switching SOA Capability
• Typical Fall Time - 160ns at +150 C
• Short Circuit Rating
• Low Conduction Loss
o
Description
The HGTG40N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25
o
C and +150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
PACKAGING AVAILABILITY
PART NUMBER
HGTG40N60B3
PACKAGE
TO-247
BRAND
G40N60B3
E
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
NOTE: When ordering, use the entire part number.
Formerly Developmental Type TA49052
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTG40N60B3
600
600
70
40
330
±20
±30
160A at 0.8 BV
CES
290
2.33
-40 to +150
260
2
10
UNITS
V
V
A
A
A
V
V
W
W/
o
C
o
C
o
C
µs
µs
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector-Gate Voltage, R
GE
= 1MΩ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CGR
Collector Current Continuous
At T
C
= +25
o
C (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= +110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
C
= +150
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
C
= +125
o
C, R
GE
= 25Ω.
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
©
Harris Corporation 1995
File Number
3943
9-3
Specifications HGTG40N60B3
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETERS
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
SYMBOL
BV
CES
I
CES
TEST CONDITIONS
I
CE
= 250µA, V
GE
= 0V
V
CE
= BV
CES
V
CE
= BV
CES
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
CE
= 40A
V
GE
= 15V
T
J
= +25
o
C
T
J
= +150
o
C
T
J
= +25
o
C
T
J
= +150
o
C
T
J
= +25
o
C
MIN
600
-
-
-
-
3.0
TYP
-
-
-
1.4
1.5
5
MAX
-
250
7.5
2.0
2.3
6.0
UNITS
V
A
mA
V
V
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
CE
= 250A,
V
CE
= V
GE
V
GE
=
±20V
Gate-Emitter Leakage Current
Latching Current
I
GES
I
L
-
160
-
-
±300
-
nA
A
T
J
= +150
o
C
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 3Ω
L = 45µH
I
CE
= 40A, V
CE
= 0.5 BV
CES
I
CE
= 40A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
V
GE
= 20V
Gate-Emitter Plateau Voltage
On-State Gate Charge
V
GEP
Q
G(ON)
-
-
-
-
-
-
-
-
-
-
8.0
240
350
50
40
350
160
1400
3300
-
-
320
450
-
-
435
200
-
-
0.43
V
nC
nC
ns
ns
ns
ns
J
J
o
C/W
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 1)
Thermal Resistance
NOTE:
t
D(ON)I
t
RI
t
D(OFF)I
t
FI
E
ON
E
OFF
R
θJC
T
J
= +150
o
C
I
CE
= 40A
V
CE(PK)
= 0.8 BV
CES
V
GE
= 15V
R
G
= 3Ω
L = 100µH
1. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). The HGTG40N60B3 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
9-4
HGTG40N60B3
Typical Performance Curves
I
CE
, COLLECTOR-EMITTER CURRENT (A)
I
CE
, COLLECTOR-EMITTER CURRENT (A)
200
180
160
140
120
100
80
60
40
20
0
0
2
4
6
8
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
12
T
C
= +150
o
C
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, V
CE
= 10V
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T
C
= +25
o
C
200
180
160
140
120
9V
100
80
60
8.0V
40
7.5V
20
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
7.0V
8.5V
9.5V
V
GE
= 15V
12V
10V
T
C
= +25
o
C
T
C
= -40
o
C
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, V
GE
= 15V
I
CE
, DC COLLECTOR CURRENT (A)
90
80
70
60
50
40
30
20
10
0
25
DIE LIMIT
V
GE
= 15V
PACKAGE LIMIT
I
CE
, COLLECTOR-EMITTER CURRENT (A)
100
200
150
T
C
= -40
o
C
T
C
= +25
o
C
100
T
C
= +150
o
C
50
0
0
1
2
3
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE
FREQUENCY = 1MHz
14
12
C, CAPACITANCE (nF)
10
8
6
4
C
OSS
2
C
RSS
0
0
5
10
15
20
25
C
ISS
V
CE
, COLLECTOR - EMITTER VOLTAGE (V)
600
I
G(REF)
= 4.06mA, R
L
= 7.5Ω, T
C
= +25
o
C
20
V
GE
, GATE-EMITTER VOLTAGE (V)
450
BV
CE
= 600V
15
300
10
BV
CE
= 400V
150
BV
CE
= 200V
5
0
0
50
100
150
200
Q
G
, GATE CHARGE (nC)
0
250
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
FIGURE 6. GATE CHARGE WAVEFORMS
9-5
HGTG40N60B3
Typical Performance Curves
100
t
D(ON)I
, TURN-ON DELAY TIME (ns)
70
50
(Continued)
T
J
= +150
o
C, R
G
= 3Ω, L = 100µH
T
J
= +150
o
C, R
G
= 3Ω, L = 100µH
t
D(OFF)I
, TURN-OFF DELAY TIME (ns)
400
350
300
V
CE(PK)
= 480V, V
GE
= 15V
250
30
20
10
10
20
30
40
50
60
70
80
90
100
200
10
20
I
CE
, COLLECTOR-EMITTER CURRENT (A)
30
40
50
60
70
80
90
I
CE
, COLLECTOR-EMITTER CURRENT (A)
100
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
T
J
= +150
o
C, R
G
= 3Ω, L = 100µH
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
T
J
= +150
o
C, R
G
= 3Ω, L = 100µH
1000
500
t
FI
, FALL TIME (ns)
300
200
100
50
30
20
V
CE(PK)
= 480V, V
GE
= 15V
100
t
RI
, TURN-ON RISE TIME (ns)
70
50
V
CE(PK)
= 480V, V
GE
= 15V
30
20
10
10
10
20
30
40
50
60
70
80
90
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
20
40
60
80
I
CE
, COLLECTOR-EMITTER CURRENT (A)
100
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
T
J
= +150
o
C, R
G
= 3Ω, L = 100µH
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
T
J
= +150
o
C, R
G
= 3Ω, L = 100µH
5
4
V
CE(PK)
= 480V, V
GE
= 15V
3
2
1
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
6
E
ON
, TURN-ON ENERGY LOSS (mJ)
10
8
V
CE(PK)
= 480V, V
GE
= 15V
6
4
2
0
10
20
30
40
50
60
70
80
90
100
10
20
30
40
50
60
70
80
90
100
I
CE
, COLLECTOR-EMITTER CURRENT (A)
I
CE
, COLLECTOR-EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
9-6
HGTG40N60B3
Typical Performance Curves
200
f
MAX
, OPERATING FREQUENCY (kHz)
100
50
(Continued)
T
C
= +150
o
C, V
GE
= 15V, R
G
= 3Ω, L = 45µH
T
J
= +150
o
C, T
C
= +75
o
C, V
GE
= +15V, R
G
= 3Ω, L = 100µH
I
CE
, COLLECTOR-EMITTER CURRENT (A)
200
160
20
10
5
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θJC
= 0.43
o
C/W
20
30
50
70
100
120
80
40
2
1
10
0
0
100
200
300
400
500
600
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
I
CE
, COLLECTOR-EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
Z
θJC
, NORMALIZED THERMAL
10
0
0.5
RESPONSE (
o
C/W)
0.2
10
-1
0.1
P
D
0.05
t
1
0.02
0.01
10
-2
10
-5
SINGLE PULSE
t
2
NOTES:
DUTY FACTOR, D = t
1
/t
2
PEAK T
J
= (P
D
X Z
θJC
X R
θJC
) + T
C
10
-2
10
-1
10
0
10
1
10
-4
10
-3
t
1
, RECTANGULAR PULSE DURATION (s)
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Test Circuit and Waveforms
L = 100µH
V
GE
90%
10%
E
OFF
E
ON
RHRP3060
R
G
= 3Ω
+
V
CE
90%
V
DD
= 480V
I
CE
10%
t
D(OFF)I
t
FI
t
RI
t
D(ON)I
-
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 17. SWITCHING TEST WAVEFORMS
9-7
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