T-1 PACKAGE
NPN PHOTOTRANSISTOR
Description
The MID-32H22 is a NPN silicon phototransistor mou-
nted in a lensed , special dark plastic package. The lens-
ing effect of the package allows an acceptance half view
angle of 20° that is measured from the optical axis to
the half power point .
MID-32H22
Package Dimensions
φ
3.55±0.25
(.140±.010)
φ
3.10±0.20
(.122±.008)
Unit : mm (inches )
4.28±0.20
(.169±.008)
5.28±0.30
(.208±.012)
3.85
(.152)
23.40MIN
(.920)
Features
l
l
l
l
l
0.50 TYP.
(.020)
Wide range of collector current
Lensed for high sensitivity
Low cost plastic package
Good spectral matching IRED (λp 880/850 nm) type
Acceptance view angle : 40
o
1.00MIN
(.040)
2.54
(.100)
E
C
Notes :
1. Tolerance is ± 0.25mm (.010") unless otherwise noted .
2. Protruded resin under flange is 1.5 mm (.059") max
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
100
30
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
V
V
Unity Opto Technology Co., Ltd.
02/04/2002
MID-32H22
Optical-Electrical Characteristics
Parameter
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark
Current
On State Collector
Current
Iceo-Collector Dark Current -
µ
A
Test Conditions
I
c
=0.1mA
Ee=0
Ie=0.1mA
Ee=0
I
c
=0.5mA
Ee=0.1mW/cm
2
V
CC
=5V, R
L
=1KΩ
I
C
=1mA
V
CE
=10V
Ee=0
V
CE
=5V
Ee=0.1mW/cm
2
Symbol
V
(BR)CEO
V
(BR)ECO
V
CE(SAT)
Tr
Tf
I
CEO
I
C(ON)
Min.
30
5
Typ.
Max.
@ T
A
=25 C
Unit
V
V
o
0.4
15
15
100
0.4
V
µS
nA
mΑ
1000
100
10
1
0.1
0.01
0.001
0
40
80
120
o
I
C
Normalized Collector Current
Typical Optical-Electrical Characteristic Curves
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Vce = 5
V
Ee = 0.1 mW/cm
2
@λ= 940 nm
-75
-25
25
75
125
200
160
120
80
40
0
0
Relative Collector Current (mA)
Tr Tf Rise and Fall Time -
µ
S
T
A
- Ambient Temperature - C
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
Vcc = 5 V
V
RL
= 1 V
F = 100 Hz
PW = 1 ms
T
A
- Ambient Temperature -
o
C
FIG.2 NORMALIZED COLLECTOR CURRENT
VS AMBIENT TEMPERATURE
10
8
6
4
2
0
0
0.1 0.2 0.3 0.4 0.5 0.6
Vce = 5 V
2
4
6
8
10
Relative Spectral Sensitivity
R
L
- Load Resistance - KΩ
FIG.3 RISE AND FALL TIME
VS LOAD RESISTANCE
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
600
700
800
900
1000
Ee - Irradiance - mW/cm
2
FIG.4 RELATIVE COLLECTOR CURRENT
VS IRRADIANCE
0° 10° 20°
30°
40°
1.0
0.9
0.8
0.5 0.3 0.1 0.2 0.4 0.6
50°
60°
70°
80
90°
Wavelength-nm
FIG.5 RELATIVE SPECTRAL SENSITIVITY
VS. WAVELENGTH
Relative Sensitivity
FIG.6 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002
嵌入式系统
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