SIDE LOOK PACKAGE
NPN PHOTOTRSNSISTOR
Description
The MID-13A45 is a Two Bits silicon phototransistor
mounted in a special dark plastic side looking package.
The lensing effect of the package allows a wide accep-
tance angle.
1.70 ± .10
(.067±.004)
Unit: mm(inches)
MID-13A45
Package Dimensions
.30MAX
(.012)MAX
.50MAX
(.020)MAX
.80 ± .10
(.032±.004)
2.05
(.081)
2.45 ±.10
(.097±.004)
4.00 ±.10
2.00 ± .10 (.158±.004)
(.079±.004)
2.00MAX(.079)MAX
.25MAX
(.010)MAX
4.00 ± .10
(.158±.004)
R1.1
2.00
(.079)
3.90
3*0.5
5.60
(.221)
+0
-.20
2.30 ± .30
(.091±.012)
.25MAX
(.010)MAX
Features
l
l
l
Wide range of collector current
Low cost plastic package
High resolution for mouse application
1.25
(.049)
1.25
(.049)
1
2
1
2
3
3
EMITTER (PTR A)
COLLECTOR(COM)
EMITTER (PTR B)
1
2
3
9.60
(.378)
7.60
(.299)
NOTES :
1. All dimensions are in millimeters.(inches).
2. Tolerance is ± 0.25mm (.010") unless otherwise noted .
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25 C
Parameter
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
100
30
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
V
V
o
Unity Opto Technology Co., Ltd.
3.70 ± .10
(.146±.004)
02/04/2002
MID-13A45
Optical-Electrical Characteristics
@ T
A
=25
o
C
Parameter
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark
Current
On State Collector
Current
Test Conditions
I
c
=0.1mA
Ee=0
Ie=0.1mA
Ee=0
I
c
=0.5mA
Ee=0.1mW/cm
2
V
R
=5V , R
L
=1KΩ
I
C
=1mA
V
CE
=10V
Ee=0
V
CE
=5V
Ee=0.1mW/cm
2
I
C(ON)
0.16
0.4
mA
Tr
Tf
I
CEO
10
10
100
nA
µS
V
CE(SAT)
0.1
0.4
V
V
(BR)ECO
5
V
Symbol
V
(BR)CEO
Min.
30
Typ .
Max.
Unit
V
Typical Optical-Electrical Characteristic Curves
Iceo-Collector Dark Current -
µ
A
1000
100
10
1
0.1
0.01
0.001
0
40
80
120
I
C
Normalized Collector Current
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-75
-25
25
75
o
Vce = 5
V
Ee = 0.1 mW/cm
2
@λ= 940 nm
T
A
- Ambient Temperature - C
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
Tr Tf - Rise and Fall Time -
µ
S
20
16
12
8
4
0
0
2
4
6
8
10
o
125
T
A
- Ambient Temperature - C
FIG.2 NORMALIZED COLLECTOR CURRENT
VS AMBIENT TEMPERATURE
Relative Collector Current (mA)
2.0
Vce = 5 V
Vcc = 5 V
V
RL
= 1 V
F = 100 Hz
PW = 1
µs
1.6
1.2
0.8
0.4
0.0
0
0.1
0.2
0.3
0.4
0.5
2
0.6
R
L
- Load Resistance - KΩ
FIG.3 RISE AND FALL TIME
VS LOAD RESISTANCE
Ee - Irradiance - mW/cm
FIG.4 RELATIVE COLLECTOR CURRENT
VS IRRADIANCE
Unity Opto Technology Co., Ltd.
02/04/2002
嵌入式系统
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