LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
1
BASE
3
COLLECTOR
BC856AWT1, BWT1
BC857AWT1, BWT1
BC858AWT1, BWT1
CWT1
3
2
EMITTER
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
BC856
–65
–80
–5.0
–100
BC857
–45
–50
–5.0
–100
BC858
–30
–30
–5.0
–100
Unit
V
V
V
mAdc
1
2
CASE 419–02, STYLE 3
SOT– 323 / SC-70
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
R
θJA
T
J
, T
stg
Max
150
833
–55 to +150
Unit
mW
°C/W
°C
DEVICE MARKING
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA)
Collector–Emitter Breakdown Voltage
(I
C
= –10
µA,
V
EB
= 0)
BC856 Series
BC857 Series
BC858 Series
BC856 Series
V
(BR)CEO
– 65
– 45
– 30
– 80
– 50
– 30
– 80
– 50
– 30
– 5.0
– 5.0
– 5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
– 15
– 4.0
v
BC857 Series
BC858 Series
Collector–Base Breakdown Voltage BC856 Series
(I
C
= – 10
µA)
Emitter–Base Breakdown Voltage
(I
E
= – 1.0
µA)
BC857 Series
BC858 Series
BC856 Series
V
(BR)CES
v
V
(BR)CBO
v
BC857 Series,
BC858 Series
Collector Cutoff Current (V
CB
= – 30 V)
(V
CB
= – 30 V, T
A
= 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
V
(BR)EBO
v
nA
µA
I
CBO
K5–1/5
LESHAN RADIO COMPANY, LTD.
BC856AWT1, BWT1 BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1
r( t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
D=0.5
0.2
SINGLE PULSE
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.05
SINGLE PULSE
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
Z
θJC
(t) = r(t) R
θJC
R
θJC
= 83.3°C/W MAX
Z
θJA
(t) = r(t) R
θJA
R
θJA
= 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
R
θJC
(t)
0.2
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
50
100
200
500
1.0k 2.0k
5.0k
10k
Figure 13. Thermal Response
–200
1s
I
C
, COLLECTOR CURRENT (mA)
3 ms
–100
–50
T
A
= 25°C
T
J
= 25°C
The safe operating area curves indicate I
C
–V
CE
limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150°C; T
C
or T
A
is variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T
J(pk)
< 150°C. T
J(pk)
may be calcu-
lated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the sec-
ondary breakdown.
–10
–5.0
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–2.0
–1.0
–0.5
–10
–30 –45 –65 –100
V
CE
, COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
K5–5/5
微控制器 MCU
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